<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Fan, Po-ChinSubject: search.filters.subject.charge pump

Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Item type:Item,
    A dual phase charge pump with compact size
    (2007-01-01)
    Hsieh, Chun-Yu
    ;
    Fan, Po-Chin
    ;
    Chen, Ke-Horng
    ;
    交大名義發表
    ;
    National Chiao Tung University
    In this paper, the regulated dual phase charge pump with compact size is presented. This charge pump uses the dual phase technique to reduce the output ripple and proposes a new power stage to define the stability of the overall system. This charge pump provides output voltage 5V and maximum load current 50mA with the constant frequency regulation. This design is based on TSMC 0.35 mu m 3.3V/5V CMOS technology.
  • Thumbnail Image
    Item type:Item,
    Low-Ripple and Dual-Phase Charge Pump Circuit Regulated by Switched-Capacitor-Based Bandgap Reference
    (2009-05-01)
    Huang, Ming-Hsin
    ;
    Fan, Po-Chin
    ;
    Chen, Ke-Horng
    ;
    電控工程研究所
    ;
    Institute of Electrical and Control Engineering
    This paper proposes a low-ripple and dual-phase charge pump circuit regulated by switched-capacitor-based bandgap reference. Due to design of a buffer stage, a system can have better bandwidth and phase margin, and thus, the transient response and driving capability can be improved. Besides, the dual-phase control can reduce the output voltage ripple by means of only one closed-loop regulation in order to improve the power conversion efficiency. Besides, the proposed automatic body switching (ABS) circuit can efficiently drive the bulk of the power p-type MOSFETs to avoid leakage and potential latch-up. Usually, the regulated charge pump circuit needs a bandgap reference circuit to provide a temperature-independent reference voltage. The switched-capacitor-based bandgap reference circuit is utilized to regulate the output voltage. This chip was fabricated by Taiwan Semiconductor Manufacturing Company (TSMC) 0.35 mu m 3.3 V/5V 2P4M CMOS technology. The input voltage range varies from 2.9 to 5.5 V, and the output voltage is regulated at 5 V Experimental results demonstrate that the charge pump can provide 48 mA maximum load current without any oscillation problems.