學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Search Results

Now showing 1 - 10 of 33

Microcrystallinity of undoped amorphous silicon films and its effects on the transfer characteristics of thin film transistors
(1995-01-01)
Liang, CW
;
Chiang, WC
;
Feng, MS
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructures
(1997-05-12)
Lin, CF
;
Cheng, HC
;
Huang, JA
;
Feng, MS
;
Guo, JD
In this letter, we report the observation of the enhanced electron mobility in three different Al0.08Ga0.92N/GaN heterostructures. These structures were deposited on (0001) 6H-SiC substrates by using the low-pressure metalorganic chemical vapor deposition method. The structure was composed of 500 Angstrom AlGaN compositional stair-step layer deposited onto 1.3 mu m GaN epitaxial layer. There is a 100 Angstrom GaN Cap layer on top of the AlGaN layer to prevent the oxidation of the AlGaN layer. By using the van der Pauw method of Hall measurement, the sheet carrier density and mobility for Al0.08Ga0.92N/GaN heterostructure are 6.6x10(12) cm(-2) and 5413 cm(2)/Vs at 77 K, respectively. This high value of mobility is, to the best of our knowledge, the first observed two-dimensional electron gas (2DEG) at the AlGaN/GaN stair-step type of heterostructure. Other interface structures such as graded composition and bulk composition structures were also prepared and 2DEG properties were observed. (C) 1997 American Institute of Physics.
Growth and characterizations of GaN on SiC substrates with buffer layers
(1997-09-01)
Lin, CF
;
Cheng, HC
;
Chi, GC
;
Feng, MS
;
Guo, JD
High quality GaN epitaxial layers were grown on 6H-SiC substrates by using low-pressure metalorganic chemical vapor deposition method, Samples employing a three-period GaN/Al0.08Ga0.92N (100 Angstrom/100 Angstrom) as a buffer layer produce a good quality GaN epitaxial layer, with mobility and carrier concentration of 612 cm(2)/V.s and 1.3x10(17) cm(-3) (at 300 K), respectively, The enhanced electron mobility in the Al0.08Ga0.92N/GaN heterostructures is also observed, By using the van der Pauw method of Hall measurement, the sheet carrier density and mobility at 4.2 K for the Al0.08Ga0.92N/GaN heterostructure are 5.8x10(12) cm(-2) and 5300 cm(2)/V.s, respectively. Strong SdH (Shubnikov-de Haas) oscillations were observed to confirm the two-dimensional electron gas (2DEG) phenomenon at the AlGaN/GaN top heterointerface. In addition, an extra SdH oscillation also resulted from the high-duality 2DEG channel of the GaN/AlGaN bottom heterointerface. (C) 1997 American Institute of Physics.
Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor deposition
(1996-05-15)
Wang, CJ
;
Feng, MS
;
Chan, SH
;
Chang, CY
;
Wu, JH
The growth and electrical characterization of Si delta-doped GaInP grown by low-pressure metalorganic chemical vapor deposition are reported in this article. It was found that the sheet carrier density saturated as a function of doping time or flow rate. Because of the limitations of Hall-effect measurements, the saturation was explained as the result of electron population in satellite L valley. The mobility enhancement was observed for the delta-doped structure with an enhancement factor of 2-3. A sharp capacitance-voltage profile with a full width at half-maximum of 30 Angstrom was obtained. Depletion-mode Si delta-doped GaInP field-effect transistors with a gate length of 2 mu m and gate width of 50 mu m were fabricated and showed good device pinch-off characteristics. The extrinsic maximum transconductance of 92 mS/mm was obtained and a broad plateau transconductance profile was observed to confirm the electron confinement in the V-shape potential well of a delta-doped GaInP layer. (C) 1996 American Institute of Physics.
The exothermic reaction and temperature measurement for tungsten CMP technology and its application on endpoint detection
(1998-01-01)
Wang, YL
;
Liu, C
;
Feng, MS
;
Tseng, WT
;
材料科學與工程學系
A novel in-situ endpoint detection method used pad temperature measurement to control the polishing tungsten and barrier metal Ti/TiN is proposed. The metal chemical-mechanical polishing (CMP) process includes chemical reaction. It is an exothermic process as the polishing slurry reacts on tungsten and Ti/TiN films. Therefore, the pad temperature increases as tungsten and barrier metal films are polished, but will drop dramatically when metal layers are polished and touch the oxide layer. A non-contact thermal sensor system was installed on our CMP tool to measure the pad temperature. From the in-situ pad temperature curve, the endpoint can be detected clearly and the polishing process stops at the oxide layer. This method can also be used to study the reactions between the pad temperature curve and the effects of CMP process conditions such as down force, platen speed as well as polishing performance such as removal rate and uniformity. (C) 1998 Elsevier Science S.A.
A modified multi-chemicals spray cleaning process for post-CMP cleaning application
(1998-01-01)
Wang, YL
;
Liu, C
;
Feng, MS
;
Tseng, WT
;
材料科學與工程學系
Chemical mechanical planarization (CMP) has become widely accepted for the planarization of device interconnect structures in deep submicron semiconductor manufacturing. Attractive features of CMP include (i) global planarization and (ii) low defect and contamination level. The main challenge of cleaning is to remove the residual particles as well as the metallic contamination. In this paper, a modified post-CMP clean up-multi-chemicals spray cleaning process-is addressed in detail. This new process has been successfully applied to both oxide and tungsten CMP cleaning. The process provides comparable defect performance and excellent removal of metallic contamination to the scrubbing process which has been widely accepted in current post-CMP cleaning usage. The new clean up development strategy also contributes to their low cost of ownership (Co0) and good process flexibility as well as the minimizing cross-contamination. (C) 1998 Elsevier Science S.A.
Integration of modified plasma-enhanced chemical vapor deposited tetraethoxysilane intermetal dielectric and chemical-mechanical polishing processes for 0.35 mu m IC device reliability improvement
(1997-09-01)
Wang, YL
;
Tseng, WT
;
Feng, MS
;
材料科學與工程學系
;
電子工程學系及電子研究所
The process of interlevel dielectrics (ILD) between poly-Si and metal is critical to device characteristics and reliability. Also, the shrinking design rules demand greater hot carrier reliability, which is strongly influenced by the ILD process. In this paper we describe a process for improving the reliability of 0.35 mu m devices by using modified plasma-enhanced chemical vapor deposited tetraethoxysilane (PECVD-TEOS) N2O-rich or O-2-rich ILD films which contain less hydrogen concentration and excellent moisture resistance, and less mobile ion penetration after chemical-mechanical polishing (CMP), relative to standard PE-TEOS oxides. The hot carrier lifetime and the held isolation device threshold voltage are monitored and compared between devices with ILD layers based on different combinations of subatomespheric O-3-TEOS borophosphorus silicate glass (BPSG), standard PE-TEOS, O-2-rich and N2O-rich oxides. The material characteristics contributing to the reduction in post-CMP mobile ion levels and the improvement in device reliability will be discussed.
Process optimization of plasma-enhanced chemical vapor deposited passivation thin films for improving nonvolatile memory IC performance
(1998-12-01)
Lin, CF
;
Tseng, WT
;
Feng, MS
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Characteristics of plasma-enhanced chemical vapor deposited (PECVD) SiO2/SiNx passivation layers are modified to improve and optimize electrical performances such as program/erase cycle and hot carrier reliability of floating-gate nonvolatile memory devices. SiH4/N2O gas mixtures are utilized as precursors for oxide CVD process. Higher SiH4/N2O flow rate ratios render the resulting oxide films more silicon-rich, as manifested by their higher refractive index (RI) and wet etch rates. These modifications in film characteristics also correspond to increased program/erase cycles and lower % hot-carrier linear drain current (I-dlin) degradation An increase in RI from 1.520 to 1.675 translates to a rise in program/erase cycles from 17.3 K to 32 K and a fall in I-dlin from 8.2% to 4.9%. Further improvement in device performance is fulfilled by modifying the stoichiometry of the overlying nitride passivation layer. Water diffusion from oxide and hydrogen release from nitride are both responsible for hot carrier drain current degradation and loss in program/erase cycles. The utilization of a high-RI oxide in conjunction with a low hydrogen content nitride would give rise to the optimal device reliability.
Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method
(1996-07-01)
Chen, JF
;
Chen, NC
;
Huang, WY
;
Lee, WI
;
Feng, MS
The transient capacitance method nas used to analyze GaN samples grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with triethylgallium (TEGa) or trimethylgallium (TMGa) as the alkyl source. Two deep levels at 1.10 and 1.27 eV were observed in the TMGa sample, while a deep level at 0.60 eV was observed in the TEGa sample. Using light illumination, levels deeper than those above were investigated in TEGa and TMGa samples.
Reactive ion etching of GaN with BCl3/SF6 plasmas
(1996-07-01)
Feng, MS
;
Guo, JD
;
Lu, YM
;
Chang, EY
;
材料科學與工程學系
Reactive ion etching (RIE) with BCl3/SF6 plasmas of high quality GaN films grown by low pressure metallorganic chemical vapor deposition (LP-MOCVD) is reported. A high etch rate of 2100 Angstrom min(-1) was achieved with BCl3/SF6 plasmas at gas pressure 40 mtorr, total gas flow rate 40 seem, and radio-frequency (RF) power 300 W. The parameters affecting the etch rates such as BCl3/SF6 flow ratio, total gas pressure, RF power and self-bias voltage have been studied. Results indicate that under high RF power (300 W) the radical concentration is an etch rate-limiting factor at lower BCl3/SF6 pressure (lower than 40 mtorr), while self-bias voltage (ion bombardment) is a rate-limiting factor at higher pressure (more than 40 mtorr). Under lower RF power (150 W), self-bias voltage becomes the dominant factor of etch rate. Scanning electron microscopy (SEM) shows that the etched profile is highly anisotropic, and the etched area has some columnar residues due to Al compound contamination from the Al cathode during RIE.

學術出版;;Publications

Browse

Filters

Settings

Sort By

Results per page

🏛️國立陽明交通大學機構典藏

Search Results