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Author: search.filters.author.Feng, MSSubject: search.filters.subject.chemical mechanical polishing

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Now showing 1 - 5 of 5
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    Item type:Item,
    A modified multi-chemicals spray cleaning process for post-CMP cleaning application
    (1998-01-01)
    Wang, YL
    ;
    Liu, C
    ;
    Feng, MS
    ;
    Tseng, WT
    ;
    材料科學與工程學系
    Chemical mechanical planarization (CMP) has become widely accepted for the planarization of device interconnect structures in deep submicron semiconductor manufacturing. Attractive features of CMP include (i) global planarization and (ii) low defect and contamination level. The main challenge of cleaning is to remove the residual particles as well as the metallic contamination. In this paper, a modified post-CMP clean up-multi-chemicals spray cleaning process-is addressed in detail. This new process has been successfully applied to both oxide and tungsten CMP cleaning. The process provides comparable defect performance and excellent removal of metallic contamination to the scrubbing process which has been widely accepted in current post-CMP cleaning usage. The new clean up development strategy also contributes to their low cost of ownership (Co0) and good process flexibility as well as the minimizing cross-contamination. (C) 1998 Elsevier Science S.A.
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    Item type:Item,
    Nitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishing
    (1999-10-15)
    Hu, TC
    ;
    Chiu, SY
    ;
    Dai, BT
    ;
    Tsai, MS
    ;
    Tung, IC
    A novel inhibitor, citric acid, was introduced in the HNO3-based slurry for copper chemical mechanical polishing. It was anticipated that a passivation layer could be formed on the copper surface in the presence of citric acid. In a 3 vol.% HNO3 solution, the passivation effect derived from citric acid saturated as the citric acid concentration reached ca. 0.01 M. The polishing rate was found to decrease with the addition of citric acid. The results showed that the HNO3-based slurry with citric acid as an inhibitor could achieve good surface planarity for copper chemical mechanical polishing. (C) 1999 Published by Elsevier Science S.A. All rights reserved.
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    The application of electrochemical metrologies for investigating chemical mechanical polishing of Al with a Ti barrier layer
    (2003-11-15)
    Chiu, SY
    ;
    Wang, YL
    ;
    Liu, CP
    ;
    Lan, JK
    ;
    Ay, C
    In situ electrochemical measurements were performed for Al and Ti disks in various slurries during polishing and static conditions. The electrochemical results obtained from the corrosion potential drop of Al polishing have verified that the maximum removal rate of metal CMP can be achieved when the removal rate of the surface oxide was equal to its growth rate. However, Ti polishing did not exist maximum removal rate. The effects of H2O2%, pH values and pressure on the Al and Ti polishing behaviors were explored by using potentiodynamic scan. The corrosion potential drop was found to be a good index for polishing removal rate. The corrosion potential drop changed with increasing H2O2% for Al polishing and there existed a maximum value. But the corrosion potential drop increased with increasing H2O2% for Ti polishing. The pH value had different effects on Al and Ti polishing. Higher pH values gave higher Al removal rate but lower Ti removal rate. The Al polishing showed more pressure sensitive than Ti polishing did. The galvanic current was measured for AIM polishing. For slurry with 6 vol.% H2O2 and pH = 4, the abraded Al electrode obtained a negative current, which implied Ti oxidation was enhanced. (C) 2003 Elsevier B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    High-selectivity damascene chemical mechanical polishing
    (2006-03-01)
    Chiu, SY
    ;
    Wang, YL
    ;
    Liu, CP
    ;
    Chang, SC
    ;
    Hwang, GJ
    In this study, multi-step chemical mechanical polishing (CMP) with different copper removal rates and polishing pads is used to eliminate topography efficiently and to reduce micro-scratches on copper films. In colloidal-silica-based slurry, the polishing behaviors of copper, tantalum and silicon dioxide are found to relate to that kind of alkaline additives. The size of cations from alkaline additives influences the zeta potential of slurries, so as to vary the material removal rate. The addition of small-sized K+ from KOH provides high removal selectivity of tantalum/copper and oxide/copper, so as to benefit the reduction of copper dishing. (c) 2005 Elsevier B.V All rights reserved.
  • Thumbnail Image
    Item type:Item,
    A modified multi-chemicals spray cleaning process for post-CMP cleaning application
    (1998-01-01)
    Wang, YL
    ;
    Liu, C
    ;
    Feng, MS
    ;
    Tseng, WT
    ;
    材料科學與工程學系
    Chemical mechanical planarization (CMP) has become widely accepted for the planarization of device interconnect structures in deep submicron semiconductor manufacturing. Attractive features of CMP include (i) global planarization and (ii) low defect and contamination level. The main challenge of cleaning is to remove the residual particles as well as the metallic contamination. In this paper, a modified post-CMP clean up-multi-chemicals spray cleaning process-is addressed in detail. This new process has been successfully applied to both oxide and tungsten CMP cleaning. The process provides comparable defect performance and excellent removal of metallic contamination to the scrubbing process which has been widely accepted in current post-CMP cleaning usage. The new clean up development strategy also contributes to their low cost of ownership (Co0) and good process flexibility as well as the minimizing cross-contamination. (C) 1998 Elsevier Science S.A.