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Author: search.filters.author.Feng, MSSubject: search.filters.subject.chemical-mechanical polishing

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Now showing 1 - 4 of 4
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    Item type:Item,
    The exothermic reaction and temperature measurement for tungsten CMP technology and its application on endpoint detection
    (1998-01-01)
    Wang, YL
    ;
    Liu, C
    ;
    Feng, MS
    ;
    Tseng, WT
    ;
    材料科學與工程學系
    A novel in-situ endpoint detection method used pad temperature measurement to control the polishing tungsten and barrier metal Ti/TiN is proposed. The metal chemical-mechanical polishing (CMP) process includes chemical reaction. It is an exothermic process as the polishing slurry reacts on tungsten and Ti/TiN films. Therefore, the pad temperature increases as tungsten and barrier metal films are polished, but will drop dramatically when metal layers are polished and touch the oxide layer. A non-contact thermal sensor system was installed on our CMP tool to measure the pad temperature. From the in-situ pad temperature curve, the endpoint can be detected clearly and the polishing process stops at the oxide layer. This method can also be used to study the reactions between the pad temperature curve and the effects of CMP process conditions such as down force, platen speed as well as polishing performance such as removal rate and uniformity. (C) 1998 Elsevier Science S.A.
  • Thumbnail Image
    Item type:Item,
    Effects of underlying films on the chemical-mechanical polishing for shallow trench isolation technology
    (1997-10-31)
    Wang, YL
    ;
    Liu, C
    ;
    Feng, MS
    ;
    Dun, JW
    ;
    Chou, KS
    The effects of underlying films on the chemical-mechanical polishing (CMP) removal rate have been studied and characterized. A model for the underlying film mechanical properties such as hardness and Young's modulus, relating to the polishing removal rate was proposed. In addition, a modified shallow trench isolation (STI) process with a thin nitride overcoat has been suggested to eliminate the dishing and oxide remaining on nitride issues. Furthermore, in order to minimize the residual particles and metallic contamination, a modified multi-chemical spray-cleaning process provided for the post-STI CMP cleaning was also studied. (C) 1997 Elsevier Science S.A.
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    Item type:Item,
    Chemical-mechanical polishing of low-dielectric-constant spin-on-glasses: film chemistries, slurry formulation and polish selectivity
    (1997-10-31)
    Wang, YL
    ;
    Liu, C
    ;
    Chang, ST
    ;
    Tsai, MS
    ;
    Feng, MS
    Alkyl siloxane-based low-dielectric-constant (low-k) spin-on-glass (SOG) thin films with varying amounts of organic content were subjected to polishing experiments using silica-and ZrO2-based slurries with a variety of additives, As the amount of organic content in SOG increases, the chemical-mechanical polishing (CMP) removal rate decreases with silica-based potassium hydroxide-added slurry. On the other hand, zirconia-based slurry resulted in higher removal rates for both SOG (>400 nm/min) and thermal oxide and an adjustment in polish selectivity (related to thermal oxide) ranging from 1.2 to 9.1 can be achieved by adding various amounts of tetra-alkyl substituted ammonium hydroxide. Post-CMP materials characterization by Fourier transform infrared spectroscopy (FTIR) and atomic force microscopy (AFM) shows the chemical stability and CMP compatibility of SOG thin films. (C) 1997 Elsevier Science S.A.
  • Thumbnail Image
    Item type:Item,
    The exothermic reaction and temperature measurement for tungsten CMP technology and its application on endpoint detection
    (1998-01-01)
    Wang, YL
    ;
    Liu, C
    ;
    Feng, MS
    ;
    Tseng, WT
    ;
    材料科學與工程學系
    A novel in-situ endpoint detection method used pad temperature measurement to control the polishing tungsten and barrier metal Ti/TiN is proposed. The metal chemical-mechanical polishing (CMP) process includes chemical reaction. It is an exothermic process as the polishing slurry reacts on tungsten and Ti/TiN films. Therefore, the pad temperature increases as tungsten and barrier metal films are polished, but will drop dramatically when metal layers are polished and touch the oxide layer. A non-contact thermal sensor system was installed on our CMP tool to measure the pad temperature. From the in-situ pad temperature curve, the endpoint can be detected clearly and the polishing process stops at the oxide layer. This method can also be used to study the reactions between the pad temperature curve and the effects of CMP process conditions such as down force, platen speed as well as polishing performance such as removal rate and uniformity. (C) 1998 Elsevier Science S.A.