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Author: search.filters.author.He, Jr-HauSubject: search.filters.subject.Aluminum doped zinc oxide (AZO)

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    Van der Waals heteroepitaxial AZO/NiO/AZO/muscovite (ANA/muscovite) transparent flexible memristor
    (2019-02-01)
    Van-Qui Le
    ;
    Thi-Hien Do
    ;
    Retamal, Jose Ramon Duran
    ;
    Shao, Pao-Wen
    ;
    Lai, Yu-Hong
    Multifunctional electronics featuring optical transparency, portability, mechanical flexibility, light-weight and environment-friendly are of great demands for next-generation smart electronics. Memristor represents one of the important chains in next-generation devices as the information computing and storage component. Here, we design the transparent flexible structure based on van der Waals heteroepitaxial AZO/NiO/AZO/muscovite (ANA/muscovite) for a memristor application. The (ANA/muscovite) memristor satisfies all the hardest requirements of a transparent soft device such as optical transparency over 80% in visible light and high performance with a ON/OFF resistance ratio > 10(5), stable endurance to 10(3) cycles and long retention time of 10(5) s. In addition, the ANA/muscovite memristor can work at various bending radii down to 5 mm, a mechanical bending after 1000 cycles at a curvature with a radius of 6.5 mm and a high temperature up to 185 degrees C, which deliver a pathway for future applications in flexible transparent smart electronics.