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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Hong, Kuo-BinSubject: search.filters.subject.GaN

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Now showing 1 - 4 of 4
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    Electrically Injected GaN-Based Vertical-Cavity Surface-Emitting Lasers with TiO2 High-Index-Contrast Grating Reflectors
    (2020-04-15)
    Chang, Tsu-Chi
    ;
    Hashemi, Ehsan
    ;
    Hong, Kuo-Bin
    ;
    Bengtsson, Jorgen
    ;
    Gustaysson, Johan
    We demonstrate the first electrically injected GaNbased vertical-cavity surface-emitting lasers (VCSELs) with a TiO2 high-index-contrast grating (HCG) as the top mirror. Replacing the top distributed Bragg reflector (DBR) with an HCG offers substantial thickness reduction, polarization-pinning, and setting of the resonance wavelength by the grating parameters. Conventional HCGs are usually suspended in the low refractive index material, such as air, in order to create the largest refractive index contrast. However, the mechanical stability of such structures can be questioned and creating free-hanging GaN-membrane on top of GaN is problematic. We have therefore fabricated TiO2-HCGs resting directly on GaN without an air-gap. No DBR layers are used below the HCG to boost the reflectivity. A VCSEL with an aperture diameter of 10 mu m shows a threshold current of 25 mA under pulsed operation at room temperature. The lasing modes locate around 400 nm and are transversely electrically -polarized with a line width of 0.5 nm. The full-width half-maximum beam divergence is 10 degrees. This demonstration of a TiO2-HCG VCSEL offers a new route to achieve polarization pinning and could also allow additional benefits such as postgrowth setting of the resonance wavelength.
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    Analysis of Quality Factor Enhancement in the Monolithic InGaN/GaN Nanorod Array
    (2019-04-01)
    Huang, Chia-Yen
    ;
    Tai, Tzu-Ying
    ;
    Hong, Kuo-Bin
    ;
    Kuo, Hao-Chung
    ;
    Lu, Tien-Chang
    Whispering gallery mode (WGM) lasers and resonators are key building blocks for photonic integrated circuits. The quality factor and resonant wavelength are strong functions of the cavity size. Nanoscale WGM cavities suffer from a low-quality factor due to prominent scattering loss. However, the quality factor could be enhanced by forming an optically-coupled rod array or photonic molecules. Through simulations, we revealed how rod-to-rod optical coupling influenced the threshold pumping level and dominant mode selection, where the trend showed good agreement with the experimental observation. According to the simulation, the quality factor could be enhanced by up to eight times by forming a six-rod photonic molecule. The quality factor and effective mode were both superior to the single rods with the same wafer device footprint.
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    High-Efficiency InGaN/GaN Core-Shell Nanorod Light-Emitting Diodes With Low-Peak Blueshift and Efficiency Droop
    (2017-03)
    Tzou, An-Jye
    ;
    Hsieh, Dan-Hua
    ;
    Hong, Kuo-Bin
    ;
    Lin, Da-Wei
    ;
    Huang, Jhih-Kai
    In this study, novel three-dimensional (3-D) nanoscale structures and methodology are demonstrated for application in high-efficiency core-shell nanorod (NR) light-emitting diodes (LEDs). The key to our successful growth of the structures is the introduction of passivation, which can be used to selectively grow active layers in desired structures. Through the fabrication methodology, core-shell NR green LEDs exhibiting large nonpolar active region and homogeneous indium distributions without a point tip shape were achieved. Stable light emission at a central wavelength of 518 nm was achieved as the injected current increased to more than 40 mA. The improved NR LEDs exhibited a stable luminescence emission wavelength (blueshift of 62 nm) and low-efficiency droop (18.1%) at 200 mA. Our scheme is scalable and compatible with current technologies, which provides a new perspective for developing high-performance, 3-D nanoscale optoelectronic devices.
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    Lasing Characteristics of GaN-Based Photonic Quasi-Crystal Surface Emitting Lasers Operated at Higher Order Gamma Mode
    (2015-11-01)
    Hong, Kuo-Bin
    ;
    Chen, Chih-Cheng
    ;
    Lu, Tien-Chang
    ;
    Wang, Shing-Chung
    ;
    光電工程學系
    In this study, GaN-based photonic quasi-crystal surface emitting lasers (PQCSELs) operated at different Gamma band-edge modes were fabricated and investigated. The photonic quasi-crystal patterns were defined by utilizing electron-beam lithography and inductively coupled plasma etching. Distinctive higher order Gamma band-edge lasing modes were identified in the GaN PQCSELs. The threshold energy density and lasing wavelength for the S3 band-edge mode were 4.6 mJ/cm(2) and 394.2 nm, respectively. The decreasing tendency of the threshold energy of PQCSEL was observed while the designed lasing mode moved from the higher Gamma band to the lower Gamma band. Numerical results showed that the S3 mode had the lower threshold and the threshold gain would be largely varied by tuning the ratio of air hole radius/lattice constant (r/a). Based on calculations and experiments, PQCSELs show the opportunity to realize lower threshold lasers than typical PC laser for specific value of r/a and appropriate higher order band-edge modes.