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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Hou, FJSubject: search.filters.subject.electrical junction

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    Application of field-induced source/drain Schottky metal-oxide-semiconductor to fin-like body field-effect transistor
    (2002-06-01)
    Lin, HC
    ;
    Wang, MF
    ;
    Hou, FJ
    ;
    Liu, JT
    ;
    Huang, TY
    A novel Schottky barrier silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) device was proposed and demonstrated, The new device features a silicide source/drain and field-induced source/drain (S/D) extensions. Excellent ambipolar performance with a near-ideal sub-threshold slope (similar to 60 mV/decade) and high on-/off-state current ratio (comparable to or higher than 10(9)) is realized, for the first time, on a single device. These encouraging results suggest that the new device may be suitable for some niche applications requiring simple and low-temperature processing of complementary metal-oxide-semiconductor(CMOS)-like devices.