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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Hsieh, JCSubject: search.filters.subject.RF

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    High-density MIM capacitors using Al2O3 and AlTiOx dielectrics
    (2002-04-01)
    Chen, SB
    ;
    Lai, CH
    ;
    Chin, A
    ;
    Hsieh, JC
    ;
    Liu, J
    We have investigated the electrical characteristics of Al2O3 and AlTiOx MIM capacitors from IF (100 KHz) to RF (20 GHz) frequency range. Record high capacitance density of 0.5 and 1.0 muF/cm(2) are obtained for Al2O3 and AlTiOx MIM capacitors, respectively, and the fabrication process is compatible to existing VLSI backend integration. However, the AlTiOx MIM capacitor has very large capacitance reduction as increasing frequencies. In contrast, good device integrity has been obtained for Al2O3 MIM capacitor as evidenced from the small frequency dependence, low leakage current, good reliability, small temperature coefficient, and low loss tangent.
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    Item type:Item,
    Frequency-dependent capacitance reduction in high-k AlTiOx and Al2O3 gate dielectrics from IF to RF frequency range
    (2002-04-01)
    Chen, SB
    ;
    Lai, CH
    ;
    Chan, KT
    ;
    Chin, A
    ;
    Hsieh, JC
    We have characterized the capacitance and loss tangent for high-k Al2O3 and AlTiOx gate dielectrics from IF (100 KHz) to RF (20 GHz) frequency range. Nearly the same rate of capacitance reduction as SiO2 was demonstrated individually by the proposed Al2O3 and AlTiOx gate dielectrics as frequency was increased. Moreover, both dielectrics preserve the higher k better than SiO2 from 100 KHz to 20 GHz. These results suggest that both Al2O3 and AlTiOx are suitable for next generation MOSFET application into RF frequency regime.
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    Item type:Item,
    RF noise in 0.18-mu m and 0.13-mu m MOSFETs
    (2002-12-01)
    Huang, CH
    ;
    Lai, CH
    ;
    Hsieh, JC
    ;
    Liu, J
    ;
    Chin, A
    We have studied the gate finger number and gate ength dependence on minimum noise figure (NFmin) in deep submicrometer MOSFETs. A lowest NFmin. of 0.93 dB is measured in 0.18-mum MOSFET at 5.8 GHz as increasing finger number to 50 fingers, but increases abnormally when above 50. The scaling gate length to 0.13 mum shows larger NFmin than the 0.18-mum case at the same finger number. From the analysis of a well-calibrated device model, the abnormal finger number dependence is due to the combined effect of reducing gate resistance and increasing substrate loss as increasing finger number. The scaling to 0.13-mum MOSFET gives higher NFmin due to the higher gate resistance and a modified T-gate structure proposed to optimize the NFmin for further scaling down of the MOSFET.