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Author: search.filters.author.Hsieh, Ting-EnSubject: search.filters.subject.MIS-HEMT

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Now showing 1 - 3 of 3
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    High-Performance LPCVD-SiNx/InAlGaN/GaN MIS-HEMTs With 850-V 0.98-m Omega.cm(2) for Power Device Applications
    (2018-01-01)
    Wang, Huan-Chung
    ;
    Lumbantoruan, Franky Juanda
    ;
    Hsieh, Ting-En
    ;
    Wu, Chia-Hsun
    ;
    Lin, Yueh-Chin
    We demonstrate the electrical performances of the quaternary InAlGaN/GaN MIS-HEMTs with high quality SiNx gate dielectric and surface passivation layer deposited by low pressure chemical vapor deposition (LPCVD) at 780 degrees C. Excellent LPCVD-SiNx/InAlGaN interface and SiNx film quality were obtained, resulting in very high output current density, a very small threshold voltage hysteresis and steep subthreshold slope. The LPCVD-SiNx/InAlGaN/GaN MIS-HEMT device exhibited high on/off current ratio, large gate voltage swing, high breakdown voltage, and very low dynamic on-resistance (R-ON) degradation, meaning effective current collapse suppression compared to the plasma enhanced chemical vapor deposition -SiN x /InAlGaN/GaN MIS-HEMTs. The corresponding specific on-resistance (RoN, sp ) for LPCVD-SiN x device was as low as 0.98 m Omega.cm(2), yielding a high figure of merit of 737 MW/cm(2) . These results demonstrate a great potential of the LPCVD-SiNx /InAlGaN/GaN MIS-HEMTs for high-power switching applications.
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    Normally-OFF GaN MIS-HEMT With F- Doped Gate Insulator Using Standard Ion Implantation
    (2018-01-01)
    Wu, Chia-Hsun
    ;
    Han, Ping-Cheng
    ;
    Quang Ho Luc
    ;
    Hsu, Ching-Yi
    ;
    Hsieh, Ting-En
    A normally-OFF GaN metal-insulator-gate high electron mobility transistors with fluorine doped gate insulator has been fabricated using standard ion implantation technique. Fluorine ions with negative charges were doped lightly into both the gate insulator and the partially recessed barrier layer, resulting in high positive threshold voltage (V-th) for the device, meanwhile preserving low ON-resistance. Compared to the fluorine-free and recess-free device, only about 16% increase of ON-resistance was observed for the F- doped devices. The fabricated F- doped device exhibits a threshold voltage of +0.68 V at I-Ds = 5 mu A/mm, a current density of 620 mA/mm, an OFF-state breakdown voltage of 800 V, and high ON/OFF current ratio of 10(10). For thermal stability consideration of fluorine dopant, the V-th-thermal stability test and positive bias temperature instability test were also discussed.
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    AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
    (2018-12-01)
    Wang, Huan-Chung
    ;
    Hsieh, Ting-En
    ;
    Lin, Yueh-Chin
    ;
    Luc, Quang Ho
    ;
    Liu, Shih-Chien
    We demonstrate the electrical performances of AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors (MIS-HEMTs) with high quality Al2O3 gate dielectric deposited by plasma enhanced atomic layer deposition using both H2O and remote O-2 plasma as oxygen sources. Excellent gate-dielectric/GaN interface and Al2O3 film quality were obtained, resulting in a very small threshold voltage hysteresis and a low interface trap density. The MIS-HEMT device exhibited high on/off current ratio of similar to 10(10), steep subthreshold slope, small gate leakage current, low dynamic on-resistance degradation, and effectively current collapse suppression. These results indicate that incorporating remote O-2 plasma in the ALD-Al2O3 deposition process is an effective and simple way to provide high quality gate dielectric for the GaN MIS-HEMTs production.