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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Hsieh, Ting-EnSubject: search.filters.subject.normally-OFF

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Now showing 1 - 4 of 4
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    Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
    (2014-07-01)
    Hsieh, Ting-En
    ;
    Chang, Edward Yi
    ;
    Song, Yi-Zuo
    ;
    Lin, Yueh-Chin
    ;
    Wang, Huan-Chung
    In this letter, a gate recessed normally OFF AlGaN/GaN MIS-HEMT with low threshold voltage hysteresis using Al2O3/AlN stack gate insulator is presented. The trapping effect of Al2O3/GaN interface was effectively reduced with the insertion of 2-nm AlN thin interfacial passivation layer grown by plasma enhanced atomic layer deposition. The device exhibits a threshold voltage of +1.5 V, with current density of 420 mA/mm, an OFF-state breakdown voltage of 600 V, and high ON/OFF drain current ratio of similar to 10(9).
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    Normally-OFF GaN MIS-HEMT With F- Doped Gate Insulator Using Standard Ion Implantation
    (2018-01-01)
    Wu, Chia-Hsun
    ;
    Han, Ping-Cheng
    ;
    Quang Ho Luc
    ;
    Hsu, Ching-Yi
    ;
    Hsieh, Ting-En
    A normally-OFF GaN metal-insulator-gate high electron mobility transistors with fluorine doped gate insulator has been fabricated using standard ion implantation technique. Fluorine ions with negative charges were doped lightly into both the gate insulator and the partially recessed barrier layer, resulting in high positive threshold voltage (V-th) for the device, meanwhile preserving low ON-resistance. Compared to the fluorine-free and recess-free device, only about 16% increase of ON-resistance was observed for the F- doped devices. The fabricated F- doped device exhibits a threshold voltage of +0.68 V at I-Ds = 5 mu A/mm, a current density of 620 mA/mm, an OFF-state breakdown voltage of 800 V, and high ON/OFF current ratio of 10(10). For thermal stability consideration of fluorine dopant, the V-th-thermal stability test and positive bias temperature instability test were also discussed.
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    Item type:Item,
    High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications
    (2018-07-01)
    Wu, Chia-Hsun
    ;
    Han, Ping-Cheng
    ;
    Liu, Shih-Chien
    ;
    Hsieh, Ting-En
    ;
    Lumbantoruan, Franky Juanda
    A GaN metal-insulator-semiconductor-high electron mobility transistor (HEMT) using hybrid ferroelectric charge trap gate stack (FEG-HEMT) is demonstrated for normally-OFF operation. The ferroelectric (FE) polarization increases the number of trapped charges in the HfON charge trapping layer, leading to high positive threshold voltage (V-th) shift for the normally-OFF device. Besides, under the positive bias temperature instability (PBTI) test, the internal electric field induced by FE polarization causes smoother slope of the conduction band in FE gate stack, resulting in better V-th stability. With the proposed hybrid FE charge trap gate stack, the device exhibits a high V-th of +2.71 V at I-DS = 1 mu A/mm, a high maximum current density of 820 mA/mm and low on-resistance (R-ON) of 11.1 Omega . mm. The FE device also shows good V-th-temperature stability compared to the non-FE device results. Besides, a high current device with 40 A is also fabricated in this letter to demonstrate the feasibility of the proposed FEG-HEMT device for high power device application.
  • Thumbnail Image
    Item type:Item,
    Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
    (2014-07-01)
    Hsieh, Ting-En
    ;
    Chang, Edward Yi
    ;
    Song, Yi-Zuo
    ;
    Lin, Yueh-Chin
    ;
    Wang, Huan-Chung
    In this letter, a gate recessed normally OFF AlGaN/GaN MIS-HEMT with low threshold voltage hysteresis using Al2O3/AlN stack gate insulator is presented. The trapping effect of Al2O3/GaN interface was effectively reduced with the insertion of 2-nm AlN thin interfacial passivation layer grown by plasma enhanced atomic layer deposition. The device exhibits a threshold voltage of +1.5 V, with current density of 420 mA/mm, an OFF-state breakdown voltage of 600 V, and high ON/OFF drain current ratio of similar to 10(9).