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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Hsu, Chih-YuSubject: search.filters.subject.tunneling

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Now showing 1 - 3 of 3
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    Evidence for a Very Small Tunneling Effective Mass (0.03m(0)) in MOSFET High-k (HfSiON) Gate Dielectrics
    (2012-04-01)
    Chen, Ming-Jer
    ;
    Hsu, Chih-Yu
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    We have recently conducted experimental and modeling tasks on TaC/HfSiON/SiON n-type MOSFETs, leading to an effective mass of 0.03m(0) for 2-D electrons tunneling in high-k HfSiON dielectrics. In this letter, we present extra evidence obtained from complementary MOSFETs undergoing the same TaC/HfSiON/SiON processing, which shows that such a very small tunneling effective mass is existent not only for 3-D electrons but also for 2-D holes. This new finding is very important because it can substantially enhance the current understanding of gate tunneling leakage suppression in metal-gate high-k MOSFETs.
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    A Method of Extracting Metal-Gate High-k Material Parameters Featuring Electron Gate Tunneling Current Transition
    (2011-04-01)
    Hsu, Chih-Yu
    ;
    Chang, Hua-Gang
    ;
    Chen, Ming-Jer
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    For metal-gate high-k dielectrics, there is a transition region in the electron gate tunneling current I(g), as characterized by a plot of dlnI(g)/dV(g) versus V(g). In this paper, we systematically construct a new fitting over the region, which can accurately determine material parameters, including metal work function, high-k electron affinity, and tunneling effective masses of electrons. First of all, a calculation of gate current due to electron direct tunneling and/or Fowler-Nordheim tunneling from an inversion layer is performed, yielding the guidelines of the fitting. Experimental samples are presented with n-channel metal-oxide-semiconductor field-effect transistors having low effective oxide thickness (1.4 nm) TaC/HfSiON/SiON gate stacks. Underlying material parameters are extracted accordingly and remain valid for higher temperature and gate voltage. We also demonstrate that a conventional method without a dlnI(g)/dV(g) fitting might lead to erroneous results. Thus, the dlnI(g)/dV(g) fitting is crucial to metal-gate high-k material parameter assessment.
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    Enhanced Hole Gate Direct Tunneling Current in Process-Induced Uniaxial Compressive Stress p-MOSFETs
    (2009-08-01)
    Hsu, Chih-Yu
    ;
    Lee, Chien-Chih
    ;
    Lin, Yi-Tang
    ;
    Hsieh, Chen-Yu
    ;
    Chen, Ming-Jer
    On a nominally 1.27-nm-thick gate oxide p-MOSFET with shallow trench isolation (STI) longitudinal compressive mechanical stress, hole gate direct tunneling current in inversion is measured across the wafer. The resulting average gate current exhibits an increasing trend with STI compressive stress. However, this is exactly contrary to the currently recognized trend: hole gate direct tunneling current decreases with externally applied compressive stress, which is due to the strain-altered valence-band splitting. To determine the mechanisms responsible, a quantum strain simulator is established, and its validity is confirmed. The simulator then systematically leads us to the finding of the origin: a reduction in the physical gate oxide thickness, with the accuracy identified down to 0.001 nm, occurs under the influence of the STI compressive stress. The strain-retarded oxide growth rate can significantly enhance hole direct tunneling and thereby reverse the conventional trend due to the strain-altered valence-band splitting.