學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Search Results

Now showing 1 - 10 of 50

Novel Low-Cost Power Divider for 5.8 GHz
(2020-04-01)
Chang, Tso-Jung
;
Pande, Krishna
;
Hsu, Heng-Tung
;
國際半導體學院
;
International College of Semiconductor Technology
This paper presents a new capacitive lump-free structure for power dividers using a printed-circuit board, while maintaining size reduction and physical isolation. The conventional lumped capacitors approach has self-resonant problem and cause worse S-22 and isolation at high frequencies. To overcome such technical issues, the coupled-line structures were introduced in the isolation network. After optimizing the distance between output ports and position of the isolation network, tuning the characteristic impedance and electrical length of transmission lines can decide the value of the lump resistor. The first example was designed at 1 GHz, and the resistor in the isolation network was 330 ohm, having 0.2-dB insertion loss and 19% total bandwidth, while maintaining 80-degree distance between split ports and 180-degree total length, providing 21% to 67% size reduction. The second example was designed at 5.8 GHz, which was five times greater than in past research, using an RO4003C substrate while maintaining a 0.24-dB insertion loss, 17% total bandwidth, and 0.06 dB amplitude imbalance, which was only 0.01 dB more than in recent research. Such superior performance is mainly attributed to the coupled transmission lines in the isolation network featuring a capacitive lump-free isolation network. Our data indicate that amplitude imbalance, bandwidth, and miniaturization are superior to any published data.
Enhancement of electron transport properties of InAlGaN/AlN/GaN HEMTs on silicon substrate with GaN insertion layer
(2020-06-01)
Kao, Min-Lu
;
Ha, Minh Thien Huu
;
Lin, Yuan
;
Weng, You-Chen
;
Hsu, Heng-Tung
InAlGaN/AlN/GaN high electron mobility transistors (HEMTs) on a silicon substrate with high electron mobility is demonstrated for the first time. The InAlGaN/AlN/GaN heterostructures has a high electron mobility of 1540 cm(2) V-1 s(-1) and low sheet resistance of 228.2 omega sq(-1) by inserting a thin GaN interlayer (IL) between InAlGaN and AlN layers. The experimental results demonstrate that an optimized GaN IL contributes to a better atomic arrangement of the InAlGaN barrier layer in the InAlGaN/GaN HEMTs and results in better electron transport properties for the device. The InAlGaN/GaN device with 170 nm gate and 2 mu m source-to-drain distance shows a high maximum current density (I-max) of 1490 mA mm(-1) and high transconductance (g(m)) of 401 mS mm(-1). Such results demonstrate the potential of adopting InAlGaN/GaN heterostructure on silicon for low cost mm-wave applications in the future.
Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications
(2020-02-01)
Lin, Y. C.
;
Chen, S. H.
;
Lee, P. H.
;
Lai, K. H.
;
Huang, T. J.
Copper-metallized gallium nitride (GaN) high-electron-mobility transistors (HEMTs) using a Ti/Pt/Ti diffusion barrier layer are fabricated and characterized for Ka-band applications. With a thick copper metallization layer of 6.8 mu m adopted, the device exhibited a high output power density of 8.2 W/mm and a power-added efficiency (PAE) of 26% at 38 GHz. Such superior performance is mainly attributed to the substantial reduction of the source and drain resistance of the device. In addition to improvement in the Radio Frequency (RF) performance, the successful integration of the thick copper metallization in the device technology further reduces the manufacturing cost, making it extremely promising for future fifth-generation mobile communication system applications at millimeter-wave frequencies.
Planar Diplexer Design Using Hairpin Resonators Loaded with External Capacitors for Improvement of Isolation and Stopband Rejection Levels
(2019-01-01)
Tsao, Yi-Fan
;
Huang, Ting-Jui
;
Hsu, Heng-Tung
;
Wu, Chia-Wei
;
交大名義發表
We have successfully demonstrated the design and implementation of a planar diplexer operating at 900MHz and 1800MHz intended for cellular system applications. Using hairpin resonators loaded with external capacitors, we managed to obtain 40% size reduction compared to the ones without external loading with substantial improvement in the band-to-band isolation.
Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications
(2020-02-01)
Huang, Kuan Ning
;
Lin, Yueh-Chin
;
Lin, Jia-Ching
;
Hsu, Chia Chieh
;
Lee, Jin Hwa
An enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with La2O3/SiO2 gate insulator is investigated for high power application. The La2O3/SiO2 composite oxide formed amorphous La-silicate after post deposition annealing. Good oxide film quality and excellent La-silicate/AlGaN interface properties were achieved as evidenced by the capacitance-voltage (C-V) curves and hysteresis effect of the La-silicate on AlGaN/GaN metal-oxide-semiconductor capacitors. As a result, the E-mode AlGaN/GaN MIS-HEMT with La-silicate gate insulator shows good threshold voltage (V-th) stability and demonstrated only slightly increase in the dynamic on-resistance (R-on) after high drain bias stress test. The device also exhibits high current density of 752 mA/mm, high maximum transconductance of 210 mS/mm, low subthreshold swing of 104 mV/decade, and I-ON/I-OFF = 10(7) when tested at V-DS = 10 V. Furthermore, low on-resistance of 7.6 omega mm, high breakdown voltage of 670 V, and excellent delay time of 4.2 ps were achieved, demonstrating the La-silicate MIS-HEMTs have the potential to be used for power electronic applications.
Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation Networks
(2020-02-01)
Tsao, Yi-Fan
;
Wuerfl, Joachim
;
Hsu, Heng-Tung
;
國際半導體學院
;
International College of Semiconductor Technology
In this paper, we propose a new configuration for improving the isolation bandwidth of MMIC single-pole-double-throw (SPDT) passive high-electron-mobility transistor (HEMT) switches operating at millimeter frequency range. While the conventional configuration adopted open-stub loading for compensation of the off-state capacitance, radial stubs were introduced in our approach to improve the operational bandwidth of the SPDT switch. Implemented in 0.15 m GaAs pHEMT technology, the proposed configuration exhibited a measured insertion loss of less than 2.5 dB with better than 30 dB isolation level over the frequency range from 33 GHz to 44 GHz. In terms of the bandwidth of operation, the proposed configuration achieved a fractional bandwidth of 28.5% compared to that of 12.3% for the conventional approach. Such superior bandwidth performance is mainly attributed to the less frequency dependent nature of the radial stubs.
Communication-Potential of the pi-Gate InAs HEMTs for High-Speed and Low-Power Logic Applications
(2019-06-07)
Yao, Jing-Neng
;
Lin, Yueh-Chin
;
Wong, Ying-Chieh
;
Huang, Ting-Jui
;
Hsu, Heng-Tung
Composite channel (In0.65Ga0.35As/InAs/In0.65Ga0.35As) high electron mobility transistors (HEMTs) with pi-gate structure were investigated for high-speed and low-power logic applications. The conventional and tri-gate MESA HEMTs were compared with the pi-gate device for evaluation. The pi-gate device exhibited the best maximum transconductance value of 1584 mS/mm, on-state current of 332mA/mm, subthreshold swing (SS) of 78.1 mV/decade, and I-ON/I-OFF ratio of 3 x 10(4) at V-DS = 0.5 V at room temperature. These results indicated that the designed pi-gate InAs devices improve the electrical characteristics of InAs HEMTs for high-speed and low-power logic applications. (c) 2019 The Electrochemical Society.
A Compact Dual-band Antenna at Ka-band Frequencies for Next Generation Cellular Applications
(2018-01-01)
Huang, Ting-Jui
;
Hsu, Heng-Tung
;
Chou, Hsi-Tseng
;
交大名義發表
;
電子工程學系及電子研究所
This paper presents a new design of a compactsized dual -band antenna operating at 28 GHz and 38 GHz for 5G cellular applications. Based on the slot-coupled patch configuration, the antenna exhibited a good impedance matching with reasonable gain of 5.5/6.5 dBi at 28/38 GHz within the band of interest. The measured total radiation efficiency of the antenna was 88.9%/83.7% at 28/38 GHz.
An 80 nm In0.7Ga0.3As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications
(2010-01-01)
Wang, Chin-Te
;
Kuo, Chien-, I
;
Lim, Wee-Chin
;
Hsu, Li-Han
;
Hsu, Heng-Tung
The fabrication process of an 80 nm In0.7Ga0.3As MHEMT device with flip-chip packaging on Al2O3 substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high I-DS = 425 mA/mm and high g(m) = 970 mS/mm at V-DS = 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NFmin)below 2 dB at 60 GHz, showing the feasibility of flip-chip packaged In0.7Ga0.3As MHEMT device for low noise applications at W-band.
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
(2009-01-01)
Chang, Chia-Yuan
;
Chang, Edward Yi
;
Huang, Wei-Ching
;
Su, Yung-Hsuan
;
Trinh, Hai-Dang
The performance of n-type metal-oxide-semiconductor HEMTs with an InAs-channel using atomic-layer-deposited Al2O3 as gate dielectric has been fabricated and evaluated. The device performances of a set of scaled transistors with different gate dielectric thicknesses of 3, 5 and 7 nm have been investigated to determine whether the architecture of Al2O3 dielectric on InAs-channel HEMT can demonstrate good properties at low bias conditions for high-speed, high performance CMOS applications. The results indicate that the high-performance InAs-channel MOS-HEMTs with an ALD Al2O3 gate dielectric are promising candidates for advanced post-Si CMOS applications.

學術出版;;Publications

Browse

Filters

Settings

Sort By

Results per page

🏛️國立陽明交通大學機構典藏

Search Results