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Author: search.filters.author.Hsu, Heng-TungSubject: search.filters.subject.HEMT

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Now showing 1 - 4 of 4
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    Effect of Field Plate on the RF Performance of AlGaN/GaN HEMT Devices
    (2012-01-01)
    Chiang, Che-Yang
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    Hsu, Heng-Tung
    ;
    Chang, Edward Yi
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    材料科學與工程學系
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    Department of Materials Science and Engineering
    This paper examines the effect of the field plate structure on the RF performance of AlGaN/GaN High Electron Mobility Transistor (HEMT) devices. While the field plate structure helps to increase the breakdown voltage of the device through modulating the electric field locally, it induces additional feedback capacitance from drain to gate. Such feedback capacitors may impact the overall RF performance of the device especially at high frequencies. Systematic investigations on the small signal as well as power performance as functions of the drain biases are presented. (C) 2011 Published by Elsevier B.V. Selection and/or peer-review under responsibility of Garry Lee
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    Effect of AlN Spacer on the AlGaN/GaN HEMT Device Performance at Millimeter-wave Frequencies
    (2018-01-01)
    Wang, Chun
    ;
    Hsu, Heng-Tung
    ;
    Huang, Ting-Jui
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    Fan, Jun-Kai
    ;
    Chang, Edward Yi
    The effect of the AlN spacer on the performance of AlGaN/GaN HEMT devices at 38 GHz is experimentally investigated. The measurement results revealed that the device with spacer showed superior performance in terms of the maximum drain current. RF wise, substantial improvement in the cut-off frequency and the maximum oscillation frequency was also observed for devices with spacer. A saturated output power density of 4.21 W/mm with 35.02% power-added efficiency (PAE) at 38 GHz were achieved for device with 70nm gate length.
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    High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications
    (2017-06-01)
    Lin, Yen-Ku
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    Noda, Shuichi
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    Huang, Chia-Ching
    ;
    Lo, Hsiao-Chieh
    ;
    Wu, Chia-Hsun
    High-performance GaN metal-oxidesemi-conductor high-electron-mobility transistors (MOSHEMTs) using Al2O3 gate dielectric deposited by atomic layer deposition (ALD) and damage-free neutral beam etch (NBE) gate recess process for millimeter-wave power applications are demonstrated. The high-quality ALD Al2O3 reduces the gate leakage current of the device and the NBE method eliminates the plasma-induced defects in the nitride materials. The MOSHEMT device fabricated exhibits a high maximum drain current density (I-DS,I-max ) of 1.65 A/mm and a high peak extrinsic transconductance (g(m.ext) ) of 653 mS/mm. The MOSHEMT device also demonstrates excellent RF performances, including f(T)/f(MAX) = 183/191 GHz, NFmin = 2.56 dB with G(AS) = 5.61 dB at 54 GHz, and an output power density of 2.7 W/mm associated with a power-added efficiency of 20.9% and a linear power gain of 9.4 dB at 38 GHz. To the best of our knowledge, the noise performance at 54 GHz is the best reported so far for the AlGaN/GaN HEMTs.
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    AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications
    (2016-11)
    Lin, Yen-Ku
    ;
    Noda, Shuichi
    ;
    Lo, Hsiao-Chieh
    ;
    Liu, Shih-Chien
    ;
    Wu, Chia-Hsun
    The electrical performances of gate-recessed AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using the damage-free neutral beam etching (NBE) method are demonstrated. The NBE method could eliminate the plasma-induced defects generated by irradiating ultraviolet/VUV photons in the conventional inductively coupled plasma reactive ion etching method. The AlGaN/GaN HEMT device fabricated using the new gate recess process exhibited superior electrical performances, including a maximum drain current density (I-DS,I-max) of 1.54 A/mm, low 1/f noise, a current-gain cutoff frequency (f(T)) of 153 GHz, a maximum frequency of oscillation (f(MAX)) of 167 GHz, and a minimum noise figure (NFmin) of 3.28 dB with an associated gain (G(AS)) of 5.06 dB at 54 GHz. Such superior characteristics confirm the inherent advantages of adopting the damage-free NBE process in fabricating GaN devices for millimeter-wave applications.