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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Hsu, I-Chen

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Now showing 1 - 6 of 6
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    High-power single-mode vertical-cavity surface-emitting lasers with multi-leaf holey structure
    (2006-09-01)
    Yang, Hung-Pin D.
    ;
    Hsu, I-Chen
    ;
    Lai, Fang-I
    ;
    Kuo, Hao-Chung
    ;
    Chi, Jim Y.
    A single-mode oxide-confined vertical-cavity surface-emitting laser (VCSEL) with multi-leaf holey structure for fiber-optic applications is demonstrated. Single fundamental mode continuous-wave output power of over 3 mW has been achieved in the 850 nm range, with a threshold current of approximately 0.5 mA. Side-mode suppression ratio (SMSR) larger than 22 dB has been measured.
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    Characteristics of single-mode InGaAs submonolayer quantum-dot photonic-crystal vertical-cavity surface-emitting lasers
    (2006-12-01)
    Yang, Hung-Pin D.
    ;
    Hsu, I-Chen
    ;
    Lai, Fang-I
    ;
    Lin, Gray
    ;
    Hsiao, Ru-Shang
    An InGaAs submonolayer (SML) quantum-dot photonic-crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fiber-optic applications is demonstrated for the first time. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (< 1 ML) and GaAs. A single-fundamental-mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. A side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over the entire current operation range. The beam profile and near-field image study of the PhC-VCSEL indicates that the laser beam,is well confined by the photonic crystal structure of the device.
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    Item type:Item,
    Characteristics of cross-shaped polarization-switching vertical-cavity surface-emitting lasers for dual-channel communications
    (2007-04-01)
    Yang, Hung-Pin D.
    ;
    Hsu, I-Chen
    ;
    Lai, Fang-I
    ;
    Lin, Gray
    ;
    Kuo, Hao-Chung
    The polarization switching of a cross-shaped vertical-cavity surface-emitting laser (VCSEL) for dual-channel communications is demonstrated. The polarization of the lasing output is controlled by the asymmetry in geometry of the device and direction of current injection. High output power ratio of over 5, between two orthogonal (perpendicular) polarization directions has been achieved. The lasing output of the device can be switched between two nearly orthogonal directions.
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    Beam profile characteristics of InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs
    (2007-06-01)
    Yang, Hung-Pin D.
    ;
    Hsu, I-Chen
    ;
    Lai, Fang-I
    ;
    Lin, Gray
    ;
    Hsiao, Ru-Shang
    An InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fiberoptic applications is first time demonstrated. The active region of the device contains 3 InGaAs SML QD layers. Each of the InGaAs SML QD layer is formed by alternate deposition of InAs (< 1 ML) and GaAs. Single fundamental mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. Side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over entire current operation range. The beam profile study of the PhC-VCSEL indicates that the laser beam is well confined by the photonic crystal structure of the device. The divergence angle of the devices remains almost unchanged with increasing current. (C) 2007 Elsevier B.V. All rights reserved.
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    Item type:Item,
    Highly strained InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers
    (2007-06-01)
    Yang, Hung-Pin D.
    ;
    Chen, I-Liang
    ;
    Lee, Chen-Hong
    ;
    Chiou, Chih-Hong
    ;
    Lee, Tsin-Dong
    We report our results on the highly strained InGaAs/GaAs quantum well (QW) vertical-cavity surface-emitting lasers (VCSELs) in the 1140 to 1250 nm range. The epitaxial structures were grown on (100)GaAs substrates by metal-organic chemical vapor deposition (MOCVD). A maximum output power of more than 6.3 mW has been demonstrated. The spectral characteristics were also measured and analyzed.
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    Item type:Item,
    Characteristics of broad-area InGaAs submonolayer quantum-dot vertical-cavity surface-emitting lasers
    (2007-10-01)
    Yang, Hung-Pin D.
    ;
    Hsu, I-Chen
    ;
    Lai, Fang-I
    ;
    Lin, Gray
    ;
    Hsiao, Ru-Shang
    A broad-area InGaAs submonolayer (SML) quantum-dot vertical-cavity surface-emitting laser (QD VCSEL) for fiber-optic applications is demonstrated. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (< 1 ML) and GaAs. A maximum CW output power of 12.2 mW at 30 mA has been achieved in the 990 nm range, with a threshold current of 1 mA.