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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Hsu, KCSubject: search.filters.subject.substrate-triggered technique

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    Substrate-triggered SCR device for on-chip ESD protection in fully silicided sub-0.25-mu m CMOS process
    (2003-02-01)
    Ker, MD
    ;
    Hsu, KC
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    The turn-on mechanism of a silicon-controlled rectifier (SCR) device is essentially a current triggering event. While a current is applied to the, base or - substrate of the SCR device, it can be quickly triggered, into its latching state. In this paper, a novel design concept to turn on the SCR device by applying the substrate-triggered technique is first proposed for effective on-chip electrostatic discharge (ESD) protection. This novel substrate-triggered SCR device has the advantages of controllable switching voltage and adjustable holding voltage and is compatible with, general CMOS processes without extra process modification such as the silicide-blocking mask and ESD implantation. Moreover, the substrate-triggered SCR, devices can be stacked in ESD protection circuits to avoid the translient-induced latch-up issue. The turn-on time of the proposed substrate-triggered SCR devices, can be reduced from 27.4 to 7.8 ns by the substrate-triggering, technique. The substrate-triggered SCR device with a small active area of only 20 mum x 20 mum can sustain the HBM ESD stress of 6.5 kV in a fully silicided 0.25-mum CMOS process.
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    Latchup-free ESD protection design with complementary substrate-triggered SCR devices
    (2003-08-01)
    Ker, MD
    ;
    Hsu, KC
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    The turn-on mechanism of silicon-controlled rectifier (SCR) devices is essentially a current triggering event. While a current is applied to the base or substrate of an SCR device, it can be quickly triggered on into its latching state. In this paper, latchup-free electrostatic discharge (ESD) protection circuits which are combined with the substrate-triggered technique and an SCR device, are proposed. A complementary circuit style with the substrate-triggered SCR device is designed to discharge both the pad-to-V-SS and pad-to-V-DD ESD stresses. The novel complementary substrate-triggered SCR devices have the advantages of controllable switching voltage, adjustable holding voltage, faster turn-on speed, and compatible to general CMOS process without extra process modification such as the silicide-blocking mask and ESD implantation. The total holding voltage of the substrate-triggered SCR device can be linearly increased by adding the stacked diode string to avoid the transient-induced latchup issue in the ESD protection circuits. The on-chip ESD protection circuits designed with the proposed complementary substrate-triggered SCR devices and stacked diode string for the input/output pad and power pad have been successfully verified in a 0.25-mum salicided CMOS process with the human body model (machine model) ESD level of similar to7.25 kV (500 V) in a small layout area.
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    Dummy-gate structure to improve turn-on speed of silicon-controlled rectifier (SCR) device for effective electrostatic discharge (ESD) protection
    (2003-11-15)
    Ker, MD
    ;
    Hsu, KC
    ;
    電機學院
    ;
    College of Electrical and Computer Engineering
    Turn-on speed is the main concern for on-chip electrostatic discharge (ESD) protection device, especially, in deep submicron complementary metal-oxide semiconductors (CMOS) processes with ultra-thin gate oxide. A novel dummy-gate-blocking silicon-controlled rectifier (SCR) device with substrate-triggered technique is proposed to improve the turn-on speed of SCR device for using in on-chip ESD protection circuit to effectively protect the much thinner gate oxide. From the experimental results, the switching voltage, turn-on resistance, and turn-on time of substrate-triggered SCR (STSCR) device with dummy-gate structure have been efficiently improved, as compared with the normal SCR with shallow trench isolation (STI) structure.