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Author: search.filters.author.Hsu, Li-HanSubject: search.filters.subject.flip-chip

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    Design of Flip-Chip Interconnect Using Epoxy-Based Underfill Up to V-Band Frequencies With Excellent Reliability
    (2010-08-01)
    Hsu, Li-Han
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    Wu, Wei-Cheng
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    Chang, Edward Yi
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    Zirath, Herbert
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    Hu, Yin-Chu
    This study demonstrates a flip-chip interconnect with epoxy-based underfill (epsilon(r) = 3.5 and tan delta = 0.02 at 10 MHz) for packaging applications up to V-band frequencies. To achieve the best interconnect performance, both the matching designs on GaAs chip and Al(2)O(3) substrate were adopted with the underfill effects taken into consideration. The optimized flip-chip interconnect showed excellent performance from dc to 67 GHz with return loss below -20 dB and insertion loss less than 0.6 dB. Furthermore, the dielectric loss induced by the underfill was extracted from measurement and compared with the simulation results. The reliability tests including 85 degrees C/85 % relative humidity test, thermal cycling test, and shear force test were performed. For the first time, the S-parameters measurement was performed to check the flip-chip reliability, and no performance decay was observed after 1000 thermal cycles. Moreover, the mechanical strength was improved about 12 times after the underfill was applied. The results show that the proposed flip-chip architecture has excellent reliability and can be applied for commercial applications.
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    Design, Fabrication, and Characterization of Novel Vertical Coaxial Transitions for Flip-Chip Interconnects
    (2009-05-01)
    Wu, Wei-Cheng
    ;
    Chang, Edward Yi
    ;
    Hwang, Ruey-Bing
    ;
    Hsu, Li-Han
    ;
    Huang, Chen-Hua
    In this paper, a novel transition design using vertical "coaxial transition" for coplanar waveguide (CPW-to-CPW) flip-chip interconnect is proposed and presented for the first time. The signal continuity is greatly improved since the coaxial-type transition provides more return current paths compared to the conventional transition in the flip-chip structure. The proposed coaxial transition structure shows a real coaxial property from the 3-D electromagnetic wave simulation results. The design rules for the coaxial transition are presented in detail with the key parameters of the coaxial transition structure discussed. For demonstration, the back-to-back flip-chip interconnect structures with the vertical coaxial transitions have been successfully fabricated and characterized. The demonstrated interconnect structure using the coaxial transition exhibits the return loss below 25 dB and the insertion loss within 0.4 dB from dc to 40 GHz. Furthermore, the measurement and simulation results show good agreement. The novel coaxial transition demonstrates excellent interconnect performance for flip-chip interconnects and shows great potential for flip-chip packaging applications at millimeter waves.