<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Hsu, Wei-TingSubject: search.filters.subject.MoS2

Search Results

Now showing 1 - 3 of 3
  • Thumbnail Image
    Item type:Item,
    Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast Photodetection
    (2014-08-01)
    Chang, Yung-Huang
    ;
    Zhang, Wenjing
    ;
    Zhu, Yihan
    ;
    Han, Yu
    ;
    Pu, Jiang
    Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS2 monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS2. This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 and is useful for guiding future designs in 2D material-based optoelectronic devices.
  • Thumbnail Image
    Item type:Item,
    Layered MoS2 grown on c-sapphire by pulsed laser deposition
    (2015-03-01)
    Ho, Yen-Teng
    ;
    Ma, Chun-Hao
    ;
    Luong, Tien-Tung
    ;
    Wei, Lin-Lung
    ;
    Yen, Tzu-Chun
    Layered growth of molybdenum disulphide (MoS2) was successfully achieved by pulsed laser deposition (PLD) method on c-plane sapphire substrate. Growth of monolayer to a few monolayer MoS2, dependent on the pulsed number of excimer laser in PLD is demonstrated, indicating the promising controllability of layer growth. Among the samples with various pulse number deposition, the frequency difference (A1gE12g) in Raman analysis of the 70 pulse sample is estimated as 20.11 cm(1), suggesting a monolayer MoS2 was obtained. Two-dimensional (2D) layer growth of MoS2 is confirmed by the streaky reflection high energy electron diffraction (RHEED) patterns during growth and the cross-sectional view of transmission electron microscopy (TEM). The in-plane relationship, (0006) sapphire//(0002) MoS2 and inline image sapphire//inline imageMoS(2) is determined. The results imply that PLD is suitable for layered MoS2 growth. Additionally, the oxide states of Mo 3d core level spectra of PLD grown MoS2, analysed by X-ray photoelectron spectroscopy (XPS), can be effectively reduced by adopting a post sulfurization process. (C) 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim
  • Thumbnail Image
    Item type:Item,
    Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast Photodetection
    (2014-08-01)
    Chang, Yung-Huang
    ;
    Zhang, Wenjing
    ;
    Zhu, Yihan
    ;
    Han, Yu
    ;
    Pu, Jiang
    Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS2 monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS2. This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 and is useful for guiding future designs in 2D material-based optoelectronic devices.