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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Hu, Chih-WeiSubject: search.filters.subject.nucleation

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Now showing 1 - 2 of 2
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    Item type:Item,
    Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory Devices
    (2009)
    Hu, Chih-Wei
    ;
    Chang, Ting-Chang
    ;
    Tu, Chun-Hao
    ;
    Chiang, Cheng-Neng
    ;
    Lin, Chao-Cheng
    In this work, a NiSiGe mixed film was deposited by the cosputtering approach. The rapidly thermal treatment condition was executed at 600 degrees C for 30 s in nitrogen ambient to form the nanocrystal structure. From the results of the transmission electron microscopy, the annealed NiSiGe film reveals a larger nanocrystal size and density distribution than pure NiSi. X-ray photoelectron spectroscopy analyses were used to confirm that the Ge elements provide the additional nucleation centers and enhance the nanocrystal formation during the thermal process. Raman spectroscopy and an energy-dispersive spectrometer also exhibit the compositions of nanocrystals including Ni, Si, and Ge elements. With the better formation process, a remarkable improvement of memory effect is observed by comparing with the NiSi and NiSiGe nanocrystal memory devices. Also, the NiSiGe nanocrystal device shows a better retention characteristic due to the lower quantum confinement effect.
  • Thumbnail Image
    Item type:Item,
    NiSiGe nanocrystals for nonvolatile memory devices
    (2009-02-09)
    Hu, Chih-Wei
    ;
    Chang, Ting-
    ;
    Tu, Chun-Hao
    ;
    Chiang, Cheng-Neng
    ;
    Lin, Chao-Cheng
    In this work, charge-storage characteristics of NiSiGe nanocrystal memory device have been studied. Transmission electron microscope shows that the annealed NiSiGe film has higher nanocrystal size and density distribution. Related material analyses such as x-ray photoelectron spectroscopy, Raman spectroscopy, and energy dispersive spectrometer were used to confirm that the Ge elements provide the additional nucleation centers and enhance the nanocrystals aggregation during thermal process. With the improved nanocrystal formation process, a remarkable improvement of the memory effect is observed by comparing the NiSi and NiSiGe nanocrystals. In addition, the retention characteristics of the nanocrystals memory devices have been discussed.