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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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    Electrochemically deposited Pd-induced crystallization of parallel needlelike polycrystalline silicon from prepatterned amorphous silicon thin films
    (2002-02-01)
    Chao, CW
    ;
    Hu, GR
    ;
    Wu, YS
    ;
    Chen, YC
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    Feng, MS
    Electrochemically deposited Pd-induced crystallization of prepatterned amorphous silicon (a-Si) thin films was proposed for the first time in this study. Most of palladium clusters were found to deposit on the sidewall of the amorphous-silicon islands. After samples were annealed at 530degreesC, parallel needlelike polycrystalline silicon grains were observed on the a-Si film with a constant angle of similar to55degrees from the edge. The direction of the primary grain growth was along [211] and the secondary growth occurred along [011] direction. (C) 2001 The Electrochemical Society.
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    The effects of oxygen concentration in Ni film on the metal induced crystallization of amorphous silicon
    (2003)
    Lin, YD
    ;
    Wu, YCS
    ;
    Chao, CW
    ;
    Hu, GR
    ;
    材料科學與工程學系
    The effects of oxygen concentration in Ni film on the metal induced crystallization of amorphous silicon were investigated. It was found that oxygen in Ni deposited film had little effect on the growth rate of polycrystalline silicon. However, an incubation period was needed for nickel oxide to be reduced to nickel metal for the subsequent mediated crystallization process.
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    Low temperature polycrystalline silicon thin film transistors fabricated by electroless plating Ni induced crystallization of amorphous Si
    (2003)
    Chao, CW
    ;
    Wu, YCS
    ;
    Chen, YC
    ;
    Hu, GR
    ;
    Feng, MS
    Compared with conventional solid phase crystallized (SPC) thin-film transistors (TFTs), metal-induced laterally crystallized (MILC) TFTs exhibit significantly enhanced performance. Metal films were usually deposited by the physical vapor deposition (PVD) method. In this work, a simpler electroless plating Ni was introduced to replace PVD Ni. It was found that the morphologies and the device characteristics of Ni induced lateral crystallization TFT were as good as those of PVD Ni induced lateral crystallization TFT.
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    The effects of Pd2Si on the electroless plating Pd induced crystallization of amorphous silicon thin films
    (2003)
    Huang, CTJ
    ;
    Hu, GR
    ;
    Wu, YCS
    ;
    Chao, CW
    ;
    材料科學與工程學系
    Electroless plating Pd method has been used to induce crystallization of amorphous silicon through the formation of Pd2Si. Unfortunately, after crystallization, the Pd2Si residues in the Si film degraded the polycrystalline quality. In this study, a two-step annealing process was used to reduce the Pd2Si quantity. Besides, post-RTA treatment was used to improve the quality of poly-Si.