<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

Filters

2002 - 20033

Settings

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Hu, GRSubject: search.filters.subject.amorphous silicon

Search Results

Now showing 1 - 3 of 3
  • Thumbnail Image
    Item type:Item,
    Electroless plating with Pd induced crystallization of amorphous silicon thin films
    (2002-11-01)
    Hu, GR
    ;
    Wu, YCS
    ;
    Chao, CW
    ;
    Huang, TJ
    ;
    材料科學與工程學系
    A metal-induced crystallization method can be used to decrease the crystallization temperature of amorphous silicon (a-Si). In this study, Pd metal was deposited by an electroless plating method. After it was annealed at 550degreesC, two kinds of needlelike grains were found. The direction of the primary grain was along <211> and the growth of the secondary grain occurred along the <011> direction.
  • Thumbnail Image
    Item type:Item,
    Effects of oxygen on the growth of Ni induced lateral crystallization of amorphous silicon films
    (2003-06-26)
    Lin, YD
    ;
    Wu, YS
    ;
    Chao, CW
    ;
    Hu, GR
    ;
    材料科學與工程學系
    Effects of oxygen on the growth of metal (Ni) induced lateral crystallization (MILC) of amorphous silicon have been investigated. It is found that the oxygen in the annealing ambient did not degrade the MILC length or growth rate. The oxygen existence in Ni film does not degrade the MILC growth rate either. However, it retards the nucleation of poly-Si for about 4 h. This is because that NiO needed an incubation period to be reduced to nickel metal for the subsequent mediated crystallization of a-Si process. (C) 2003 Elsevier Science B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Improved annealing process for electroless Pd plating induced crystallization of amorphous silicon
    (2003-08-01)
    Hu, GR
    ;
    Huang, TJ
    ;
    Wu, YS
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Electroless Pd plating induced crystallization of amorphous silicon (a-Si) thin films has been proposed for fabricating low-temperature polycrystalline silicon thin film transistors (LTPS TFTs). However, the current crystallization process often leads to poor device performance due to the large amount of I'd-silicide residues in the poly-Si thin films. It was found that the amount of I'd silicide increased with annealing time and temperature. In this study, a two-step annealing process was developed to obtain the appropriate amount of Pd silicide for inducing the crystallization of a-Si. The device characteristics were significantly improved by this two-step process.