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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Huang, CY

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    Scheduler design issues for wireless high-speed data systems
    (2004-01-01)
    Huang, CY
    ;
    Su, HY
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    To understand the tradeoff between the system throughput and the user fairness, in this paper, two different scheduler design concepts are discussed and evaluated based on the full-buffer data model and finite packet-call-size data model. In finite packet-call-size data model, we will show analytically and by simulation that the system throughput depends on the number of active users and the user's in-slot rates. In order to quantify the impacts, a simulation platform is developed based on IxEV-DO technology.
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    Collision-free path planning and modification based on task requirements
    (1997-01-01)
    Young, KY
    ;
    Huang, CY
    ;
    機械工程學系
    ;
    電控工程研究所
    ;
    Department of Mechanical Engineering
    In order to enhance integration between CAD and robots, we propose a scheme to planning kinematically feasible paths in the presence of obstacles. Thus, the feasibility of a planned path from a CAD system is assured before the path is sent for execution. The proposed scheme imposes a geometrical analysis on a given robot manipulator and obstacles. Consequently, geometrical information describing the robot workspace, obstacles and the planned path can be derived. Then, by utilizing path modification strategies appropriate to various industrial tasks, the planned path can be modified so that it is kinematically feasible and collision-free and satisfies task requirements. The analyses in this paper are based on multiple arbitrarily-shaped obstacles and general non-redundant wrist-partitioned types of robot manipulators in which the joint axes are either perpendicular or parallel to one another. For demonstration, simulations based on using the PUMA 560 robot manipulator to perform different tasks in the presence of obstacles were conducted. Copyright (C) 1996 Elsevier Science Ltd
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    Effects of NH3 plasma passivation on N-channel polycrystalline silicon thin-film transistors
    (1997-01-01)
    Cheng, HC
    ;
    Wang, FS
    ;
    Huang, CY
    ;
    奈米中心
    ;
    Nano Facility Center
    The NH3-plasma passivation has been performed on polycrystalline silicon (poly-Si) thin-film transistors (TFT's). It is found that the TFT's after the NH3-plasma passivation achieve better device performance, including the off-current below 0.1 pA/mu m and the on/off current ratio higher than 10(8), and also better hot-carrier reliability than the H-2-plasma ones. Based on optical emission spectroscopy (OES) and secondary ion mass spectroscopy (SIMS) analysis, these improvements were attributed to not only the hydrogen passivation of the defect states, but also the nitrogen pile-up at SiO2/poly-Si interface and the strong Si-N bond formation to terminate the dangling bonds at the grain boundaries of the polysilicon films. Furthermore, the gate-oxide leakage current significantly decreases and the oxide breakdown voltage slightly increases after applying NH3-plasma treatment. This novel process is of potential use for the fabrication of TFT/LCD's and TFT/SRAM's.
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    Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon deposition
    (1997-09-01)
    Tsai, JW
    ;
    Huang, CY
    ;
    Tai, YH
    ;
    Cheng, HC
    ;
    Su, FC
    A short H-2 plasma treatment of the gate SiNx before depositing amorphous silicon (a-Si:H) is found to significantly decrease the threshold shifts in the bias stress, inverted a-Si:H thin film transistors (TFTs). The reduced threshold voltage shift is attributed to a plasma induced reconstruction of SiNx precursors leading to the removal of the weak bonds. A prolonged plasma treatment, however, degraded the TFT characteristics; this was traced H-2 plasma damage which eventually generated a rough a-Si:H/SiNx interface. (C) 1997 American Institute of Physics.
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    Allocation and scheduling algorithms for IEEE 802.14 and MCNS in hybrid fiber coaxial networks
    (1998-12-01)
    Lin, YD
    ;
    Huang, CY
    ;
    Yin, WM
    ;
    資訊工程學系
    ;
    Department of Computer Science
    IEEE 802.14 and MCNS are two standards developed for the Hybrid Fiber Coaxial (HFC) CATV networks. Both standards model an upstream channel as a stream of minislots. But their philosophies on resolving collisions in the shared upstream channel are rather different, where IEEE 802.14 adopts the priority+FIFO first-transmission rule and the n-ary tree retransmission rule, and MCNS adopts the binary exponential backoff algorithm with adjustable window sizes. Both provide reservation access, while IEEE 802.14 and MCNS also support isochronous aceess and immediate access, respectively. In this paper, we try to prepare a suggestion list for vendors on how to allocate minislots for reservation aceess and immediate access and how to schedule the reserved bandwidth, which greatly affect the performance of a cable network and are left open by the standards.
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    The instability characteristics of amorphous silicon thin film transistors with various interfacial and bulk defect states
    (1997-10-01)
    Cheng, HC
    ;
    Tsai, JW
    ;
    Huang, CY
    ;
    Luo, FC
    ;
    Tuan, HC
    The instability characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) with various interfacial and bulk defect states were systematically investigated. It was found that, under positive bias stresses; the threshold voltage shifts of a-Si:H TFT's with the same interfacial defect states but with different bulk defect states exhibited similar threshold voltage shift characteristics. In contrast, a-Si:H TFTs with different interfacial defect states but the same bulk defect states showed threshold voltage shifts proportional to the interfacial defect states under positive bias stresses. Furthermore, both the above kinds of a-Si:H TFT under positive bias stresses exhibited that the subthreshold swing shift characteristics closely related to both the interfacial and bulk defect states.
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    A model for low-temperature operation of minority-carrier well-type guard rings in epitaxial CMOS structures
    (1998-03-01)
    Huang, CY
    ;
    Chen, MJ
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    As temperature is lowered, behaviors of well-type guard rings in an epitaxial substrate are quite different from those at RT so that the previous formulation is unable to reflect these discrepancies precisely. This leads to a new escape-current model suitable for low-temperature applications. In addition to the structural parameters, the new model is also functions of other physical quantities such as temperature, high-level injection, surface recombination velocity at the high/low junction and minority-carrier transport parameters, which are also important at low temperature. (C) 1997 Elsevier Science Ltd.
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    Item type:Item,
    Well supply voltage effect on escape current of guard rings in epitaxial CMOS technology
    (1998-05-01)
    Huang, CY
    ;
    Chen, MJ
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    An n-well guard ring dual collector structure formed on an epitaxial substrate has been characterized and simulated. The measured I-V characteristics have exhibited that a reduction of well supply voltage from 5.0 to 1.0 V causes an increase in the escape current into the outer well by a factor of about 14, while the base and inner guard ring collector currents are hardly changed. This will influence neighboring latchup susceptibility substantially. This experimental observation can provide a new evidence of the published theory responsible for the escape current: the injected minority carriers flow through a quasi-neutral layer between the upper collecting plate and the bottom high/low junction reflecting plate. Based on this theory actual epitaxial layer thickness can be extracted with low guard ring voltages as well. Published by Elsevier Science Ltd. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Allocation and scheduling algorithms for IEEE 802.14 and MCNS in hybrid fiber coaxial networks
    (1998-12-01)
    Lin, YD
    ;
    Huang, CY
    ;
    Yin, WM
    ;
    資訊工程學系
    ;
    Department of Computer Science
    IEEE 802.14 and MCNS are two standards developed for the Hybrid Fiber Coaxial (HFC) CATV networks. Both standards model an upstream channel as a stream of minislots. But their philosophies on resolving collisions in the shared upstream channel are rather different, where IEEE 802.14 adopts the priority+FIFO first-transmission rule and the n-ary tree retransmission rule, and MCNS adopts the binary exponential backoff algorithm with adjustable window sizes. Both provide reservation access, while IEEE 802.14 and MCNS also support isochronous aceess and immediate access, respectively. In this paper, we try to prepare a suggestion list for vendors on how to allocate minislots for reservation aceess and immediate access and how to schedule the reserved bandwidth, which greatly affect the performance of a cable network and are left open by the standards.
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    Item type:Item,
    Thin-film transistors with polycrystalline silicon films prepared by two-step rapid thermal annealing
    (2000-01-15)
    Cheng, HC
    ;
    Huang, CY
    ;
    Wang, FS
    ;
    Lin, KH
    ;
    Tarntair, FG
    A novel two-step rapid thermal annealing (RTA) process has been developed to significantly reduce the crystallization time for the solid-phase crystallization (SPC) of amorphous silicon films. In comparison with the conventional SPC processes, it not only keeps a low thermal budget but also achieves a larger poly-Si film grain size than that obtained by one-step RTA, and even as large as that obtained by conventional furnace annealing (CFA). Furthermore, poly-Si thin-film transistors fabricated by such a novel annealing scheme possess electrical characteristics superior to those obtained by one-step RTA and comparable to those obtained by long-time CFA.