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Now showing 1 - 9 of 9

0.18um CMOS Low-Noise Amplifier with two 2(nd)-order notch filters for Ultra-Wideband Wireless Receiver
(2007)
Huang, Che-Cheng
;
Huang, Zhe-Yang
;
Wang, Yen-Chun
;
Hung, Yeh-Tai
;
Chen, Meng-Ping
In this paper a CMOS dual-wideband low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaked load, two 2(nd)-order notch fitters and an output buffer for measurement purpose. It is simulated in TSMC 0.18um standard CMOS process. The LNA gives 13.1dB maximum power gain between 3.0GHz-4.9GHz and 15.5dB maximum power gain between 6.2GHz-10.2GHz while consuming 21.9mW through a 1.8V supply. Over the 3.1GHz-4.9GHz frequency band and the 6.2GHz-10.2GHz,a minimum noise figure is 2.5dB and 2.8dB. Input return loss lower than 6.4dB in all bandwidth have been achieved.
Multi-stage low-noise amplifier with LC-tank load for ultra-wideband wireless receiver
(2007)
Chen, Chun-Chieh
;
Huang, Zhe-Yang
;
Wang, Yen-Chun
;
Chiang, Pei-Yuan
;
Huang, Che-Cheng
A multi-stage low-noise amplifier (LNA) with LC-tank load to extend the bandwidth is designed for ultra-wideband (UWB) wireless receiver. The design consists of three LC-tank cascode amplifier and one output buffer and is implemented in 0.18um RF CMOS process. The LNA gives 14.5dB gain and 7.2GHz 3dB bandwidth (3.1 - 10.3GHz) while consuming 22.8mW through a 1.5V supply. Over the 3.1GHz - 10.3GHz frequency band, a minimum noise figure of 2.6dB and input return loss lower than -8.8dB have been achieved.
A CMOS low noise amplifier with RLC-impedance feedback for 3-5GHz ultra-wideband wireless system
(2007)
Huang, Zhe-Yang
;
Huang, Che-Cheng
;
電信工程研究所
;
Institute of Communications Engineering
In this paper a CMOS low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, a cascoded amplifier with shunt-peaked load, a RLC-impedance feedback loop and an output buffer for measurement purpose. It is simulated in TSMC 0.18um standard RF CMOS process. The LNA gives 13.65dB maximum power gain between 3.1GHz-5.0GHz while consuming 12.51mW through a 1.8V supply voltage. Over the 3.1GHz-5.0GHz frequency band, the minimum noise figure (NIT) is 3.67dB. Input return loss lower than -10.1 dB in all bandwidth have been achieved.
CMOS dual-wideband low-noise amplifier in 3.1GHz-4.9GHz and 6.0GHz-10.3GHz for ultra-wideband wireless receiver
(2007)
Huang, Zhe-Yang
;
Huang, Che-Cheng
;
Chen, Chun-Chieh
;
Hung, Chung-Chih
;
電信工程研究所
In this paper a CMOS dual-wideband low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaked load, a notch filter and an output buffer for measurement purpose. It is simulated in TSMC 0.18um standard RF CMOS process. The LNA gives 13.66dB maximum power gain between 3.0GHz-4.9GHz and 10.34dB maximum power gain between 6.0GHz-10.3GHz while consuming 24.07mW through a 1.8V supply. Over the 3.1GHz-4.9GHz frequency band and the 6.0GHz-10.3GHz, a minimum noise figure is 2.6dB and 3.8dB. Input return loss lower than - 8.31dB in all bandwidth have been achieved.
CMOS dual-wideband low-noise amplifier with notch filter for 3.1GHz-10.6GHz ultra-wideband wireless receiver
(2007)
Huang, Zhe-Yang
;
Huang, Che-Cheng
;
電信工程研究所
;
Institute of Communications Engineering
In this paper a CMOS dual-wideband low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system..The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaked load, a notch filter and an output buffer for measurement purpose. It is simulated in TSMC 0.18um standard RF CMOS process. The LNA gives 13.66dB maximum power gain between 3.0GHz-4.9GHz and 10.34dB maximum power gain between 6.0GHz-10.3GHz while consuming 24.07mW through a 1.8V supply. Over the 3.1GHz-4.9GHz frequency band and the 6.0GHz-10.3GHz, a minimum noise figure is 2.6dB and 3.8dB. Input return loss lower than -8.31dB in all bandwidth have been achieved.
A CMOS low-noise amplifier with impedance feedback for ultra-wideband wireless receiver system
(2008)
Huang, Zhe-Yang
;
Huang, Che-Cheng
;
Chen, Chun-Chieh
;
Hung, Chung-Chih
;
Jou, Christina F.
In this paper, a CMOS low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver system. The design consists of a wideband input impedance matching network, a cascoded amplifier with shunt-peaked load, a RLC-impedance feedback loop and an output buffer for measurement purpose. It is fabricated in TSMC 0.18um standard RF CMOS process. The LNA gives 11.5dB maximum power gain between 3.1GHz-5.0GHz while consuming 5.7mW through a 1.8V supply voltage. Over the 3.1GHz-5.0GHz frequency band, the minimum noise figure (NF) is 4.7dB. Input return loss lower than -12.7 dB in all bandwidth have been achieved.
CMOS low-noise amplifier with shunt-peaking load for group 1 similar to 3 MB-OFDM ultra-wideband wireless receiver
(2008)
Huang, Zhe-Yang
;
Huang, Che-Cheng
;
Chen, Chun-Chieh
;
Hung, Chung-Chih
;
Jou, Christina F.
In this paper, a CMOS low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaking load and an output buffer for measurement purpose. It was fabricated in UMC 0.18um standard RF CMOS process. The LNA provides 14.1dB maximum power gain between 2.3GHz-8.0GH while consuming 18.6mW (including buffer) through a 1.8V supply. Over the 3.1GHz-8.0GHz frequency band, a minimum noise figure is 2.0dB. The input return loss is lower than - 7.1dB in the entire bandwidth has also been achieved.
Design considerations on input impedance matching for ultra-wideband low-noise amplifier
(2008)
Huang, Zhe-Yang
;
Huang, Che-Cheng
;
Chen, Meng-Ping
;
Hung, Yeh-Tai
;
傳播研究所
A multi-stage low-noise amplifier (LNA) with LC-tank load to extend the bandwidth is designed for ultra-wideband (UWB) wireless receiver. The design consists of three LC-tank cascode amplifier and one output buffer and Is implemented in 0.18um RF CMOS process. The trade off on noise figure and chip area in low-noise amplifier design is discussed. The two LNA (LC and Res) gives 14.5dB gain; 7.2GHz and 7.0GRz 3dB bandwidth (3.1-103GHz and 3.1-10.1GHz) while consuming 22.8mW and 23.8mW through a 1.5V supply. Over the 3.1GHz - 10.3GHz and 3.1GHz-10.1GHz frequency band, a minimum noise figure of 2.6dB and 6.3dB and input return loss lower than -8.8dB and -6.8dB have been achieved.
A CMOS current reused low-noise amplifier for ultra-wideband wireless receiver
(2008)
Huang, Zhe-Yang
;
Huang, Che-Cheng
;
Hung, Yeh-Tai
;
Chen, Meng-Ping
;
傳播研究所
A current reused low-noise amplifier (LNA) with gain compensated to extend the bandwidth which is designed for ultra-wideband (UWB) wireless receiver. The design consists of two cascode common-source amplifier and an output buffer which is implemented in 0.18um RF CMOS process. The LNA gives 13.1dB gain; 9.1GHz 3dB bandwidth (3.1-12.2GHz) while consuming 13.9mW through a 1.8V supply. Over the 3.1GHz - 10.6GHz frequency band, a minimum noise figure of 2.7dB and input return loss lower than -8.7dB have been achieved.

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🏛️國立陽明交通大學機構典藏

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