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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Huang, Che-Cheng

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Now showing 1 - 10 of 17
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    CMOS low-noise amplifier for mode-C & mode-D MB-OFDM UWB wireless receiver
    (2007-01-01)
    Huang, Zhe-Yang
    ;
    Huang, Che-Cheng
    ;
    Chen, Chun-Chieh
    ;
    Hung, Chung-Chih
    ;
    電信工程研究所
    This paper presents a low-power low-noise amplifier (LNA) with switching bands for MB-OFDM Group-C and Group-D ultra-wideband wireless radio system. The LNA is designed and implemented in TSMC 0.18um RF CMOS process. Simulation results show that power gain of 12.4dB, input and output matching lower then -8.5dB and -14.5dB, and a minimum NF of 4.0dB can be achieved, while the power consumption is 11.2 mW through 1.8V power supply.
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    0.18um CMOS Low-Noise Amplifier with two 2(nd)-order notch filters for Ultra-Wideband Wireless Receiver
    (2007)
    Huang, Che-Cheng
    ;
    Huang, Zhe-Yang
    ;
    Wang, Yen-Chun
    ;
    Hung, Yeh-Tai
    ;
    Chen, Meng-Ping
    In this paper a CMOS dual-wideband low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaked load, two 2(nd)-order notch fitters and an output buffer for measurement purpose. It is simulated in TSMC 0.18um standard CMOS process. The LNA gives 13.1dB maximum power gain between 3.0GHz-4.9GHz and 15.5dB maximum power gain between 6.2GHz-10.2GHz while consuming 21.9mW through a 1.8V supply. Over the 3.1GHz-4.9GHz frequency band and the 6.2GHz-10.2GHz,a minimum noise figure is 2.5dB and 2.8dB. Input return loss lower than 6.4dB in all bandwidth have been achieved.
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    Multi-stage low-noise amplifier with LC-tank load for ultra-wideband wireless receiver
    (2007)
    Chen, Chun-Chieh
    ;
    Huang, Zhe-Yang
    ;
    Wang, Yen-Chun
    ;
    Chiang, Pei-Yuan
    ;
    Huang, Che-Cheng
    A multi-stage low-noise amplifier (LNA) with LC-tank load to extend the bandwidth is designed for ultra-wideband (UWB) wireless receiver. The design consists of three LC-tank cascode amplifier and one output buffer and is implemented in 0.18um RF CMOS process. The LNA gives 14.5dB gain and 7.2GHz 3dB bandwidth (3.1 - 10.3GHz) while consuming 22.8mW through a 1.5V supply. Over the 3.1GHz - 10.3GHz frequency band, a minimum noise figure of 2.6dB and input return loss lower than -8.8dB have been achieved.
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    An Inductor-Coupling Resonated CMOS Low Noise Amplifier for 3.1-10.6GHz Ultra-Wideband System
    (2009)
    Huang, Zhe-Yang
    ;
    Huang, Che-Cheng
    ;
    Chen, Chun-Chieh
    ;
    Hung, Chung-Chill
    ;
    Chen, Chia-Min
    In this paper, a low power low-noise amplifier (LNA) using inductor-coupling resonated technique is designed for ultra-wideband (UWB) wireless system. The design consists of a wideband input impedance matching network, one stage cascode amplifier with inductor-coupling resonated load, and an output buffer; it was fabricated in TSMC 0.18um standard RF CMOS process. The UWB LNA gives 10.8dB power gain and 9.4GHz 3dB bandwidth (1.2GHz - 10.6GHz) while consuming only 6.2mW through a 1.2V supply, including output buffer. Over the 3.1GHz - 10.6GHz frequency band, a minimum noise figure of 3.9dB and input return loss lower than -5.7dB have been achieved.
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    A CMOS low noise amplifier with RLC-impedance feedback for 3-5GHz ultra-wideband wireless system
    (2007)
    Huang, Zhe-Yang
    ;
    Huang, Che-Cheng
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    In this paper a CMOS low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, a cascoded amplifier with shunt-peaked load, a RLC-impedance feedback loop and an output buffer for measurement purpose. It is simulated in TSMC 0.18um standard RF CMOS process. The LNA gives 13.65dB maximum power gain between 3.1GHz-5.0GHz while consuming 12.51mW through a 1.8V supply voltage. Over the 3.1GHz-5.0GHz frequency band, the minimum noise figure (NIT) is 3.67dB. Input return loss lower than -10.1 dB in all bandwidth have been achieved.
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    CMOS low-noise amplifier for 6-11 GHz MB-OFDM UWB wireless radio system
    (2007)
    Huang, Zhe-Yang
    ;
    Huang, Che-Cheng
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    This paper presents a low-power low-noise amplifier (LNA) with switching bands for MB-OFDM Group-C and Group-D ultra-wideband wireless radio system. The LNA is designed and implemented in TSMC 0.18um RF CMOS process. Simulation results show that power gain of 12.4dB, input and output matching lower then -8.5dB and -14.5dB, and a minimum NF of 4.0dB can be achieved, while the power consumption is 11.2 mW through 1.8V power supply.
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    Item type:Item,
    CMOS dual-wideband low-noise amplifier in 3.1GHz-4.9GHz and 6.0GHz-10.3GHz for ultra-wideband wireless receiver
    (2007)
    Huang, Zhe-Yang
    ;
    Huang, Che-Cheng
    ;
    Chen, Chun-Chieh
    ;
    Hung, Chung-Chih
    ;
    電信工程研究所
    In this paper a CMOS dual-wideband low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaked load, a notch filter and an output buffer for measurement purpose. It is simulated in TSMC 0.18um standard RF CMOS process. The LNA gives 13.66dB maximum power gain between 3.0GHz-4.9GHz and 10.34dB maximum power gain between 6.0GHz-10.3GHz while consuming 24.07mW through a 1.8V supply. Over the 3.1GHz-4.9GHz frequency band and the 6.0GHz-10.3GHz, a minimum noise figure is 2.6dB and 3.8dB. Input return loss lower than - 8.31dB in all bandwidth have been achieved.
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    Item type:Item,
    A switching-band CMOS low-noise amplifier for 6-11GHz MB-OFDM UWB wireless radio system
    (2007)
    Huang, Zhe-Yang
    ;
    Huang, Che-Cheng
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    This paper presents a low-power low-noise amplifier (LNA) with switching bands for MB-OFDM Group-C and Group-D ultra-wideband wireless radio system. The LNA is designed and implemented in TSMC 0.18um RF CMOS process. Simulation results show that power gain of 12.4dB, input and output matching lower then -8.5dB and -14.5dB, and a minimum NF of 4.0dB can be achieved., while the power consumption is 11.2 mW through 1.8V power supply.
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    Item type:Item,
    CMOS dual-wideband low-noise amplifier with notch filter for 3.1GHz-10.6GHz ultra-wideband wireless receiver
    (2007)
    Huang, Zhe-Yang
    ;
    Huang, Che-Cheng
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    In this paper a CMOS dual-wideband low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system..The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaked load, a notch filter and an output buffer for measurement purpose. It is simulated in TSMC 0.18um standard RF CMOS process. The LNA gives 13.66dB maximum power gain between 3.0GHz-4.9GHz and 10.34dB maximum power gain between 6.0GHz-10.3GHz while consuming 24.07mW through a 1.8V supply. Over the 3.1GHz-4.9GHz frequency band and the 6.0GHz-10.3GHz, a minimum noise figure is 2.6dB and 3.8dB. Input return loss lower than -8.31dB in all bandwidth have been achieved.
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    A 1v CMOS low-noise amplifier with inductive resonated for 3.1-10.6GHz UWB wireless receiver
    (2007)
    Huang, Zhe-Yang
    ;
    Huang, Che-Cheng
    ;
    Chen, Chun-Chieh
    ;
    Hung, Chung-Chih
    ;
    電信工程研究所
    In this paper a low power and low-noise amplifier (LNA) is designed for ultra-wideband (UWB) system. The design consists of a wideband input impedance matching network, two stages common-source amplifier with inductive resonated load and an output buffer measurement purpose; it is fabricated in TSMC 0.18um standard RF CMOS process. The measured UWB LNA gives 12.0dB gain and 8.0GHz 3dB bandwidth (3.0-11.0GHz) while consuming only 7.3mW through a 1.0V supply including the buffer. Over the 3.1-10.6 GHz frequency band, a minimum noise figure of 4.2dB and input return loss lower than -8.7dB have been achieved.