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Author: search.filters.author.Huang, Chia-YenSubject: search.filters.subject.InGaN

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    Analysis of Quality Factor Enhancement in the Monolithic InGaN/GaN Nanorod Array
    (2019-04-01)
    Huang, Chia-Yen
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    Tai, Tzu-Ying
    ;
    Hong, Kuo-Bin
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    Kuo, Hao-Chung
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    Lu, Tien-Chang
    Whispering gallery mode (WGM) lasers and resonators are key building blocks for photonic integrated circuits. The quality factor and resonant wavelength are strong functions of the cavity size. Nanoscale WGM cavities suffer from a low-quality factor due to prominent scattering loss. However, the quality factor could be enhanced by forming an optically-coupled rod array or photonic molecules. Through simulations, we revealed how rod-to-rod optical coupling influenced the threshold pumping level and dominant mode selection, where the trend showed good agreement with the experimental observation. According to the simulation, the quality factor could be enhanced by up to eight times by forming a six-rod photonic molecule. The quality factor and effective mode were both superior to the single rods with the same wafer device footprint.
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    Mode-Hopping Phenomena in the InGaN-Based Core-Shell Nanorod Array Collective Lasing
    (2018-07-01)
    Huang, Chia-Yen
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    Tai, Tzu-Ying
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    Lin, Jing-Jie
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    Chang, Tsu-Chi
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    Liu, Che-Yu
    A two-dimensional monolithic InGaN-based core-shell it array was excited under a varying temperature. We observed an abrupt dominant mode hopping from 3.29 to 141 eV in the collective lasing as the temperature decreased from T = 240 to 225 K, Photoluminescence under a near-threshold pumping density revealed the splitting of spontaneous emission. between the core and the shell with a decreasing temperature. The bandgap evolution of GaN and InGaN showed opposite trends due to the interaction of temperature effects and bandgap renormalization effects. Theoretical simulation revealed the differences of gain spectra evolution between room lire and to temperature due to the difference the carrier dynamics, In the optically coupled nanorod array, the dominant lasing;mode was not only determined by it structure, but also strongly influenced by external operating conditions. Rattier than singular microcavity lasers the coupled nanorod array demonstrated a broader parameter space for on-chip wavelength manipulation.
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    Collective Lasing Behavior of Monolithic GaN-InGaN Core-Shell Nanorod Lattice under Room Temperature
    (2017-10-01)
    Huang, Chia-Yen
    ;
    Lin, Jing-Jie
    ;
    Chang, Tsu-Chi
    ;
    Liu, Che-Yu
    ;
    Tai, Tzu-Ying
    We demonstrated a monolithic GaN-InGaN core-shell nanorod lattice lasing under room temperature. The threshold pumping density was as low as 140 kW/cm(2) with a quality factor as high as 1940. The narrow mode spacing between lasing peaks suggested a strong coupling between adjacent whisper gallery modes (WGM), which was confirmed with the far field patterns. Excitation area dependent photoluminescence revealed that the long-wavelength lasing modes dominated the collective lasing behavior under a large excitation area. The excitation-area-dependent lasing behavior resulted from the prominent optical coupling among rods. According to the optical mode simulations and truncated-rod experiments, we confirmed that the fine-splitting of lasing peaks originated from the coupled supermodes existing in the periodic nanorod lattices. With wavelength-tunable active materials and a wafer-level scalable processing, patterning optically coupled GaN-InGaN core-shell nanorods is a highly practical approach for building various on-chip optical components including emitters and coupled resonator waveguides in visible and ultraviolet spectral range.