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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作,涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Now showing 1 - 4 of 4
  • Item type:Item,
    DC-12-GHz 10-dB gain shunt-series shunt-shunt wideband amplifiers by commercially available 0.35 mu M SiGe HBT technology
    (2004-03-20)
    Meng, CC
    ;
    Wu, TH
    ;
    Huang, GW
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    The realization of wideband amplifiers with shunt-series shunt-shunt dual-feedback configuration with commercially available 0.35-mum SiGe BiCMOS technology is reported. The SiGe HBT used here has f(t) of 67 GHz and BVceo of 2.5 V. The experimental results show that power gain is 10 dB from DC to 12 GHz for a shunt-series shunt-shunt wideband amplifier, with the help of the emitter capacitive peaking technique. Input- and output-return losses are better than 10 dB for the same frequency range. Noise figure increases from 8 to 12 dB for frequencies from 1 to 18 GHz. OP1db and OIP3 are 0 dBm and 12 dBm at 1 GHz, respectively. Total current consumption is 11 mA at 3.3 V supply voltage. (C) 2004 Wiley Periodicals, Inc.
  • Item type:Item,
    An improved approach for small-signal equivalent-circuit parameter determination of InGaP/GaAs HBT
    (2005-03-05)
    Chen, HY
    ;
    Chen, KM
    ;
    Huang, GW
    ;
    Chang, CY
    ;
    Huang, TY
    In this paper, an improved method for extracting the small-signal equivalent-circuit elements of an HBT is proposed. A more general HBT equivalent circuit and a more general explicit equation on the total extrinsic elements are introduced. Linear least-square algorithms are cleverly adopted to reduce the number of error function. As a result, the modified approach can yield a better fit between the measured and simulated S-parameters over the conventional method. (C) 2005 Wiley Periodicals, Inc.
  • Item type:Item,
    A monolithic 5.2-GHz single-ended input and single-ended output GaInP/GaAs HBT upconversion Gilbert mixer with integrated oscillator
    (2005-05-20)
    Meng, CC
    ;
    Hsu, SK
    ;
    Huang, GW
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A truly balanced operation of a 5.2-GHz Gilbert micromixer with a single-ended input and a single-ended output is demonstrated using 2-mu m GaInP/GaAs HBT technology. Because the micromixer has a single-ended input, a passive LC current combiner is used to convert the mixer-differential output into a single-ended output. A cross-coupled LC oscillator with oscillation frequency of 4.3 GHz and a cascode buffer amplifier are also integrated in the same chip. The fully integrated upconversion micromixer has conversion gain of -2.5 dB and OPIdb of - 12.5 dBm when input IF = 0.9 GHz and thus output RF = 5.2 GHz. The IF input return loss is better than 25 dB for frequencies up to 6 GHz, while the RF output return loss is better than 12 dB for frequencies from 5.15 to 5.35 GHz. (c) 2005 Wiley Periodicals, Inc.
  • Item type:Item,
    A 5.7 GHz Gilbert upconversion mixer with an LC current combiner output using 0.35 mu m SiGe HBT technology
    (2005-06-01)
    Wu, TH
    ;
    Meng, CC
    ;
    Wu, TH
    ;
    Huang, GW
    ;
    電信工程研究所
    This paper demonstrates a small compact 5.7 GHz upconversion Gilbert micromixer using 0.35 mu m SiGe HBT technology. A micromixer has a broadband matched single-ended input port. A passive LC current combiner is used to convert micromixer differential output into a single-ended output and doubles the output current for single-ended-input and single-ended-output applications. Thus, a truly balanced operation of a Gilbert upconversion mixer with a single-ended input and a single-ended output is achieved in this paper. The fully matched upconversion micromixer has conversion gain of -4 dB, OP(1 dB) of -9 dBm and OIP(3) of 4 dBm when input IF=0.3 GHz. LO=5.4 GHz and output RF=5.7 GHz. The IF input return loss is better than IS dB for frequencies up to 20 GHz while RF output return loss is 25 dB at 5.7 GHz. The supply voltage is 3.3 V and the current consumption is 4.6 mA. The die size is 0.9 X 0.9 mm(2) with 3 integrated on-chip inductors.