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Fabrication and characterization of In0.25Ga0.75N/GaN multiple quantum wells embedded in nanorods
(2005-10-01)
Hsueh, TH
;
Sheu, JK
;
Huang, HW
;
Chang, YH
;
Ou-Yang, MC
ln(0.25)Ga(0.75)N/GaN multiple quantum wells embedded in nanorods with diameters of 60-100nm were fabricated by inductively coupled plasma reactive ion etching with Cl-2/Ar plasma. The strong optical emission of the nanorods, observed by micro-photoluminescence measurement at 80 K, reveals a large blue shift of about 90meV and an increase in photoluminescence intensity density of more than 17-fold, compared with that of the as-grown wafer under the same excitation power density of 80W/cm(2). These nanostructures have a high potential for application in efficient GaN-based vertical cavity emitters.
The block-based cycle time estimation algorithm for wafer fabrication factories
(1999-12-01)
Chung, SH
;
Huang, HW
;
工業工程與管理學系
;
Department of Industrial Engineering and Management
Cycle time is both an important performance measure and requisite input data for performing production planning. However, the interactive effects between some factors such as process complexity and variety of workstations, leads to difficulty in estimating cycle time. To solve these problems, this study developed a block-based cycle time estimation algorithm, called BBCT, to estimate the total cycle time for each kind of wafer process. Process was divided into numerous blocks. The block cycle time is induced by batch and loading issues. The BBCT algorithm is used to derive the cycle time induced by the batch issue according to the process characteristics within each block. A queuing time model is used to derive the waiting time resulting from the loading issue. The simulation results show that the cycle time estimation performance is much improved by the BBCT algorithm. Significance: The proposed BBCT algorithm can improve the performance of cycle time estimation, and served as the basis for setting production targets.
Cycle time estimation for wafer fab with engineering lots
(2002-02-01)
Chung, SH
;
Huang, HW
;
工業工程與管理學系
;
Department of Industrial Engineering and Management
Due to the interaction between the process complexity and equipment diversity in a wafer fab, it is rather difficult to estimate the material flow time of wafer lots. Facing competition, it is common for a wafer fab to produce a certain quantity of engineering lots. However, introducing engineering lots into the factory will increase the complexity of the material flow control and the difficulty in cycle time estimation. The purpose of this paper is to develop cycle time estimation algorithms for a wafer fab by analyzing the material flow characteristics. Simulation results have shown that the algorithm is capable of generating satisfactory cycle time estimations with or without existing engineering lots.
Gallium nitride nanorods fabricated by inductively coupled plasma reactive ion etching
(2002-08-15)
Yu, CC
;
Chu, CF
;
Tsai, JY
;
Huang, HW
;
Hsueh, TH
We report a novel method of fabricating gallium nitride (GaN) nanotods of controllable dimension and density from GaN epitaxial film using inductively coupled plasma reactive ion etching (ICP-RIE). The GaN epitaxial film was grown on a sapphire substrate by metal-organic chemical vapor deposition. Under the fixed Cl-2/Ar flow rate of 10/25 sccm and ICP/bias power of 200/200 W. the GaN nanorods and array were fabricated with a density of 10(8)-10(10) cm(-2) and dimension of 20-100 nm by varying the chamber pressure from 10 to 30 mTorr. The technique offers one-step, controllable method for the fabrication of GaN nanostructures and should be applicable for the fabrication of GaN-based nano-optoelectronic devices.
Study of dry etching for GaN and InGaN-based laser structure using inductively coupled plasma reactive ion etching
(2004-03-25)
Kao, CC
;
Huang, HW
;
Tsai, JY
;
Yu, CC
;
Lin, CF
Dry etching of undoped, n-GaN, p-GaN and InGaN laser structure was investigated by inductively coupled plasmas reactive ion etching (ICP-RIE) using Ni mask. As Cl-2/Ar gas flow rates were fixed at 10/25 sccm, the etched surface roughness has the lowest value of 0.2 nm at constant ICP/bias power = 300/100 W and 5 mTorr chamber pressure for undoped GaN. The highest etching rate of 12,000 Angstrom/min for n-GaN was achieved at 30 mTorr, 300 W ICP, 100 W bias power using low Cl-2 flow rate (Cl-2/Ar = 10/25 sccm) gas mixtures. The surface roughness was dependent of bias power and chamber pressure, and shows a low root mean square (rms) roughness value of about I nm at 50 W of bias power for n-GaN and p-GaN. For etching of InGaN laser structure using high O-2 flow rate (Cl-2/Ar = 50/20 sccm) and low chamber pressure 5 mTorr, a smooth mirror-like facet of InGaN laser diode structure was obtained. Using these etching parameters, mirror-like facets can be obtained which can be used for the fabrication of nitride-based laser diodes. Moreover, at the fixed Cl-2/Ar flow rate of 10/25 sccm, ICP/bias power of 200/100 W and chamber pressure of 30 mTorr, the InGaN-based materials nanorods were fabricated with a density of about 10(8) cm(-2) and dimension of 50-100 nm. (C) 2004 Elsevier B.V. All rights reserved.
Effect of rapid thermal annealing on beryllium implanted p-type GaN
(2004-03-25)
Huang, HW
;
Kao, CC
;
Tsai, JY
;
Yu, CC
;
Chu, CF
We report the results of rapid thermal annealing (RTA) effect on beryllium implanted in situ activated p-type GaN samples and investigate the ramping and isothermal annealing effect of RTA process for these samples. It is found that the optimum RTA condition is at the temperature of 1100 degreesC for 15 s. Furthermore, with equal total isothermal time of 60 s, we compared the multiple step annealing (MSA) at 1100 degreesC for four periods with single step annealing (SSA) for one period at the same annealing temperature of 1100 degreesC, and observed that the ramping effect with MSA could repair Be-related complex defect, and one time, long period isothermal annealing effect with SSA seems to induce much more defect. It seems that the multiple step annealing is more effective and induce less defect than single step annealing for Be-implanted in situ activated p-type GaN samples. (C) 2004 Elsevier B.V. All rights reserved.
Investigation of GaN LED with Be-implanted Mg-doped GaN layer
(2004-10-15)
Huang, HW
;
Kao, CC
;
Chu, JT
;
Kuo, HC
;
Wang, SC
We report the electrical and optical characteristics of GaN light emitting diode (LED) with beryllium (Be) implanted Mg-doped GaN layer. The p-type layer of Be-implanted GaN LED showed a higher hole carrier concentration of 2.3 x 10(18)CM(-3) and low specific contact resistance value of 2.0 x 10(-4) Omegacm(2) than as-grown p-GaN LED samples without Be-implantation. The Be-implanted GaN LEDs with InGaN/GaN MQW show slightly lower light output (about 10%) than the as-grown GaN LEDs, caused by the high RTA temperature annealing process. (C) 2004 Elsevier B.V. All rights reserved.
Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching
(2004-10-25)
Huang, HW
;
Kao, CC
;
Hsueh, TH
;
Yu, CC
;
Lin, CF
We report a novel method to fabricate GaN-based nanorod light emitting diodes (LEDs) with controllable dimension and density using self-assemble nickel (Ni) and Ni/Si3N4 nano-masks and inductively coupled plasma reactive ion etching (ICP-RIE). Under the fixed Cl-2/Ar flow rate of 50/20 sccm. ICP/Bias power of 400/100 W and chamber pressure of 0.67 Pa, the GaN-based nanorod LEDs were fabricated with density of 2.2 x 10(9) to 3 x 10(10) cm(-2) and dimension of 150-60 nm by self assemble Ni nano-masks with various size. The size of Ni/Si3N4 nano-mask was control by the thickness Ni film ranging 150-50 Angstrom and rapid thermal annealing condition. The technique offers a controllable method of fabrication of GaN-based nanorod LEDs and should be applicable for fabrication of the others III-V nanoscale photonic and electronic devices. (C) 2004 Elsevier B.V. All rights reserved.
Improvement of kink characteristics performance of GaAsVCSEL with a indium-tin-oxide top transparent overcoating
(2004-11-15)
Lai, F
;
Chang, YH
;
Hsueh, TH
;
Huang, HW
;
Laih, LH
We demonstrated the enhancement in the performance of proton-implanted GaAs VCSEL by incorporation of a new p-contact scheme using a Ti and ITO transparent overcoating on the regular p-contact. The kink characteristics in light output power versus current (L-I) curve of the VCSEL with the Ti/ITO overcoating were improved with a reduction in the derivative kink factor of as large as 70%. The high-speed response of the overcoated device also shows a more open clear eye and lower jitter of 35 ps operating at 2.125 Gb/s under 10 mA bias and 9 dB extinction ratio compared to the no overcoated device. Better current spreading and uniformity induced by the overcoating could be responsible for these performance improvements. (C) 2004 Elsevier B.V. All rights reserved.
Light-output enhancement in a nitride-based light-emitting diode with 22 degrees undercut sidewalls
(2005-01-01)
Kao, CC
;
Kuo, HC
;
Huang, HW
;
Chu, JT
;
Peng, YC
We successfully fabricated nitride-based light-emitting diodes (LEDs) with similar to 22degrees undercut sidewalls. The similar to 22degrees etching undercut sidewalls were achieved by controllable inductively coupled plasma reactive ion etching. With a 20-mA current injection, the output powers of the LED with similar to 22degrees undercut sidewalls and standard LED were 5.1 and 3 mW, respectively-a factor of 1.7 times enhancement. It was found that such undercut sidewalls could enhance the probability of escaping the photons outside from the LED in the near horizontal and in-plane directions. This simple and controllable method is beneficial to fabricate brighter LEDs.

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