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Author: search.filters.author.Huang, Shin-PingSubject: search.filters.subject.LTPS TFTs

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Now showing 1 - 4 of 4
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    Enhancement of Mechanical Bending Stress Endurance Using an Organic Trench Structure in Foldable Polycrystalline Silicon TFTs
    (2020-05-01)
    Zheng, Yu-Zhe
    ;
    Huang, Shin-Ping
    ;
    Chen, Po-Hsun
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    This letter proposes a new organic trench structure which can enhance the endurance of polycrystalline silicon thin film transistors (TFTs) under mechanical bending stress. It compares conventional structure TFTs to devices with an organic trench to examine reliability after undergoing 100,000 iterations of channel width-axis (100,000'WC) compression at R = 2mm. Due to the low Young's modulus of organic materials, stress while undergoing bending strain is desorbed to the buffer layer, which can lower the overall stress in TFTs. Furthermore, an optimal location and ideal length for such an organic trench is evaluated by mechanical bending simulation.
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    Impact of Dehydrogenation Annealing Process Temperature on Reliability of Polycrystalline Silicon Thin Film Transistors
    (2019-10-01)
    Huang, Shin-Ping
    ;
    Chen, Po-Hsun
    ;
    Chen, Hong-Chih
    ;
    Zheng, Yu-Zhe
    ;
    Chu, Ann-Kuo
    This letter investigates variations in polycrystalline silicon thin film transistor (TFT) performance under illumination and negative bias temperature instability (NBTI) tests due to different dehydrogenation annealing temperatures during the fabrication process. The depth of the density of state (DOS) in polysilicon can be indirectly determined by the TFT response to light illumination, since dangling bonds act as recombination centers. The electrical characteristics of TFTs after undergoing NBTI can also be indicative of the bonding type of silicon atoms. By analyzing the results of these reliability tests, the type of DOS can be clarified, which is beneficial for realizing the relationship between performance and reliability.
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    Effect of SiO2 Buffer Layer Thickness on Performance and Reliability of Flexible Polycrystalline Silicon TFTs Fabricated on Polyimide
    (2016-12-01)
    Chen, Bo-Wei
    ;
    Chang, Ting-Chang
    ;
    Hung, Yu-Ju
    ;
    Huang, Shin-Ping
    ;
    Chen, Hua-Mao
    This letter investigates flexible polycrystalline silicon thin film transistor performance variation due to different buffer layer thicknesses. In flexible electronics, thermal expansion stress during device fabrication is inevitable. A thicker SiO2 buffer demonstrates better endurance to thermal expansion stress from the polyimide substrate during device annealing. However, if the SiO2 buffer thickness is above a critical point, its weak heat dissipation capability causes the optimal ELA crystallization condition to shift. A thermal expansion stress simulation and TEM photos were utilized to verify performance variation. Furthermore, a similar trend was observed in electrical characteristics after negative bias temperature instability.
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    Effects of Repetitive Mechanical Bending Strain on Various Dimensions of Foldable Low Temperature Polysilicon TFTs Fabricated on Polyimide
    (2016-08)
    Chen, Bo-Wei
    ;
    Chang, Ting-Chang
    ;
    Hung, Yu-Ju
    ;
    Huang, Shin-Ping
    ;
    Liao, Po-Yung
    This letter investigates the effect of repeated uniaxial mechanical stress on bias-induced degradation behavior in polycrystalline thin-film transistors (TFTs). After 100 000 iterations of channel-width-direction mechanical compression, serious threshold voltage degradation and an abnormal hump are observed. Simulation indicates that the strongest mechanical stress occurs at both sides of the channel edge, between the polycrystalline silicon and gate insulator. Since these stress points produce oxide traps in the gate insulator, the degradation of threshold voltage shift and parasitic current path can be attributed to electron trapping at these intense mechanical stress points. In addition, the degradation becomes serious with diminishing TFT size.