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Author: search.filters.author.Huang, TYSubject: search.filters.subject.N2O

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Now showing 1 - 4 of 4
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    Improvements on electrical characteristics of p-channel metal-oxide-semiconductor field effect transistors with HfO2 gate stacks by post deposition N2O plasma treatment
    (2005-11-01)
    Lu, WT
    ;
    Chien, CH
    ;
    Lan, WT
    ;
    Lee, TC
    ;
    Yang, MJ
    In this work, we found that employing a post deposition N2O plasma treatment following the deposition of HfO2 film can effectively improve the electrical characteristics of p-type channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with a HfO2 gate stack in terms of lower gate leakage current, lower interface state density, superior subthreshold swing, higher normalized transconductance and enhanced driving current even though it had led to a slightly higher equivalent oxide thickness (EOT) value of the HfO2 gate stack by around 0.3 nm. In order to clarify the attributes of the improvements, we used charge pumping (CP) measurement to analyze the densities of interface states and bulk traps in the HfO2 gate stacks. The improvements are then ascribed to the higher interface quality offered by the post deposition N2O plasma treatment. Moreover, we found that to more accurately estimate the bulk traps from the CP measurement, the leakage should be taken into account especially at low frequencies. Finally, it was found that the levels of the bulk traps and interface states can be reduced by the N2O plasma treatment, which also helps significantly eliminate the degradation of the gate stack during the subsequent voltage stress.
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    Item type:Item,
    Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation
    (1998-10-01)
    Lai, CS
    ;
    Chao, TS
    ;
    Lei, TF
    ;
    Lee, CL
    ;
    Huang, TY
    A systematic study of the impact of the reliability of metal-oxide semiconductor field-effect transistors (MOSFETs) with N2O nitrided gate oxides and N2O poly-reoxidation was conducted. The improvements include hot carrier immunity, suppression of reverse short channel effect and suppression of plasma-induced degradation. These improvements are due to nitrogen incorporation at the oxide/Si-substrate interface. All data presented in this study involve substantially low thermal budget (850 degrees C), making this N2O-related technology extremely attractive and promising for future scaled devices.
  • Thumbnail Image
    Item type:Item,
    Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation
    (1998-10-01)
    Lai, CS
    ;
    Chao, TS
    ;
    Lei, TF
    ;
    Lee, CL
    ;
    Huang, TY
    A systematic study of the impact of the reliability of metal-oxide semiconductor field-effect transistors (MOSFETs) with N2O nitrided gate oxides and N2O poly-reoxidation was conducted. The improvements include hot carrier immunity, suppression of reverse short channel effect and suppression of plasma-induced degradation. These improvements are due to nitrogen incorporation at the oxide/Si-substrate interface. All data presented in this study involve substantially low thermal budget (850 degrees C), making this N2O-related technology extremely attractive and promising for future scaled devices.
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    Item type:Item,
    The combined effects of nitrogen implantation at S/D extension and N2O oxide on 0.18 mu m N- and P-metal oxide field effect transistors (MOSFETs)
    (1999-12-01)
    Chao, TS
    ;
    Chang, SJ
    ;
    Chien, CH
    ;
    Lin, HC
    ;
    Huang, TY
    The combined effects of N-2-implantation at S/D extension and N2O oxide on 0.18 mu m n- and p-Metal oxide field effect transistors (MOSFETs) were investigated. It is found that for n-channel transistors, V-th roll-off and drain-induced barrier lowering (DIBL) are enhanced by nitrogen incorporation through either N2O oxide or N-2-implantatian. However, for p-channel transistors, apposite trends are observed for N2O oxide and N-2-implantation. Finally, nitrogen incorporation by either method is found to improve the interface quality for nMOSFETs. While for p-channel transistors, best results are obtained by the combined effects of N2O oxide and N-2-implantation.