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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Huang, Zhe-Yang

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Now showing 1 - 10 of 24
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    CMOS low-noise amplifier for mode-C & mode-D MB-OFDM UWB wireless receiver
    (2007-01-01)
    Huang, Zhe-Yang
    ;
    Huang, Che-Cheng
    ;
    Chen, Chun-Chieh
    ;
    Hung, Chung-Chih
    ;
    電信工程研究所
    This paper presents a low-power low-noise amplifier (LNA) with switching bands for MB-OFDM Group-C and Group-D ultra-wideband wireless radio system. The LNA is designed and implemented in TSMC 0.18um RF CMOS process. Simulation results show that power gain of 12.4dB, input and output matching lower then -8.5dB and -14.5dB, and a minimum NF of 4.0dB can be achieved, while the power consumption is 11.2 mW through 1.8V power supply.
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    1V 4.8mW 42.6-45.6GHz CMOS Voltage Controlled Oscillator for IEEE 802.15.3c Wireless Communication System
    (2010-01-01)
    Huang, Zhe-Yang
    ;
    Hung, Chung-Chih
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    A 1V 4.8mW 42.6GHz-45.6GHz CMOS Voltage Controlled Oscillator (VCO) is designed for IEEE 802.15.3c mm-wave wireless communication system. The oscillator provides a center frequency of 44.1GHz and is implemented in 90nm Logic CMOS technology. The oscillator core consumes 4.8mW through 1.0V supply voltage and the active area is 0.05mm(2) only. A tuning range of 3.0GHz (42.6GHz-45.6GHz) with maximum control voltage of 1.0V can be achieved. And the phase noise is -93.7 dBc/Hz at 1MHz offset from the center frequency. The calculated figure-of-merit (FOM) is -180.1 dB.
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    CMOS Dual-Band Low-Noise Amplifier for World-Wide WiMedia Ultra-Wideband Wireless Personal Area Network System
    (2010-01-01)
    Huang, Zhe-Yang
    ;
    Hung, Chung-Chih
    ;
    電信工程研究所
    ;
    Institute of Communications Engineering
    This paper presents a dual-band low-noise amplifier (DB-LNA) with switching band groups for WiMedia Ultra-Wideband. The LNA is designed and implemented in TSMC 0.18um RF CMOS technology. Measurement results show that the DB-LNA gives 6.1dB and 9.8dB power gain, and that input and output matching are lower than-9.3dB/-9.4dB (Group-1/Group-6) and-9.2dB/-11.7dB (Group-1/Group-6). A minimum noise figure is 5.0dB/5.1dB (Group-1/Group-6) while consuming 24.8mW (including buffer) through 1.8V supply voltage.
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    0.18um CMOS Low-Noise Amplifier with two 2(nd)-order notch filters for Ultra-Wideband Wireless Receiver
    (2007)
    Huang, Che-Cheng
    ;
    Huang, Zhe-Yang
    ;
    Wang, Yen-Chun
    ;
    Hung, Yeh-Tai
    ;
    Chen, Meng-Ping
    In this paper a CMOS dual-wideband low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaked load, two 2(nd)-order notch fitters and an output buffer for measurement purpose. It is simulated in TSMC 0.18um standard CMOS process. The LNA gives 13.1dB maximum power gain between 3.0GHz-4.9GHz and 15.5dB maximum power gain between 6.2GHz-10.2GHz while consuming 21.9mW through a 1.8V supply. Over the 3.1GHz-4.9GHz frequency band and the 6.2GHz-10.2GHz,a minimum noise figure is 2.5dB and 2.8dB. Input return loss lower than 6.4dB in all bandwidth have been achieved.
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    Multi-stage low-noise amplifier with LC-tank load for ultra-wideband wireless receiver
    (2007)
    Chen, Chun-Chieh
    ;
    Huang, Zhe-Yang
    ;
    Wang, Yen-Chun
    ;
    Chiang, Pei-Yuan
    ;
    Huang, Che-Cheng
    A multi-stage low-noise amplifier (LNA) with LC-tank load to extend the bandwidth is designed for ultra-wideband (UWB) wireless receiver. The design consists of three LC-tank cascode amplifier and one output buffer and is implemented in 0.18um RF CMOS process. The LNA gives 14.5dB gain and 7.2GHz 3dB bandwidth (3.1 - 10.3GHz) while consuming 22.8mW through a 1.5V supply. Over the 3.1GHz - 10.3GHz frequency band, a minimum noise figure of 2.6dB and input return loss lower than -8.8dB have been achieved.
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    Low-power CMOS voltage-controlled oscillator with voltage-controlled inductor for V-band wireless personal area network communication systems
    (2015-12-10)
    Huang, Zhe-Yang
    ;
    Chen, Chun-Chieh
    ;
    Hung, Chung-Chih
    ;
    電機資訊學士班
    ;
    電子工程學系及電子研究所
    A low-power voltage-controlled oscillator (VCO) with voltage-controlled inductor for V-band wireless personal area network communication systems is presented in this study. The proposed VCO with a voltage-controlled inductor provides a centre frequency of 45.62 GHz and was implemented in a 90 nm RF-CMOS process. A tuning range of 1.28 GHz (44.98-46.26 GHz) with maximum control voltage of 1.0 V can be achieved. The phase noise is -92.8 dBc/Hz at 1 MHz offset frequency. The VCO core consumes 5.8 mW through a 1.0 V supply voltage and the active area is 0.13 mm(2). The calculated figure-of-merit is -178.3.
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    A 65-77 GHz low power, meander-type transmission line CMOS low-noise amplifier
    (2015-07-10)
    Huang, Zhe-Yang
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    Chen, Chun-Chieh
    ;
    Hung, Chung-Chih
    ;
    電機資訊學士班
    ;
    Undergraduate Honors Program of Electrical Engineering and Computer Science
    A 65-77 GHz low power, meander-type transmission line CMOS low-noise amplifier for E-band millimetre-wave communication using 90 nm MS/RF CMOS process is demonstrated. The low-noise amplifier consists of multi-stage cascaded common-source amplifiers with optimized noise figure, power gain, and power consumption. The LNA achieves 11.7 dB power gain, 5.5 dB noise figure, and 17.7 mW power consumption. The meander-type transmission line circuit design is adopted to reduce chip area; the total transmission line area in LNA is only 0.024 mm(2).
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    Dual-band voltage controlled oscillator with optimized Gm
    (2015-04-10)
    Huang, Zhe-Yang
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    Chen, Chun-Chieh
    ;
    Hung, Chung-Chih
    ;
    電機資訊學士班
    ;
    Undergraduate Honors Program of Electrical Engineering and Computer Science
    A differential VCO with differential push-push frequency doubler for dual-band application is proposed. The dual-band VCO (DB-VCO) adopts the tunable -Gm to optimize the wide tuning start-up condition. The proposed DB-VCO was implemented in 180-nm CMOS process. The DB-VCO provides a fundamental center frequency at 4.476 GHz and a double frequency at 8.985 GHz. A tuning range of fundamental frequency is 1.125 GHz (3.928 GHz-5.053 GHz), and a tuning range of the double frequency is 2.257 GHz (7.856 GHz-10.113 GHz) with maximum control voltage of 1.0 V can be achieved. The phase noise is -96.0 dBc/Hz at 1 MHz offset from center of the DB-VCO fundamental frequency. And the phase noise is -86.4 dBc/Hz at 1 MHz offset from center of the DB-VCO double frequency. The power dissipation of the DB-VCO core is 6.6 mW through 1.0 V supply voltage. The active area is 0.09 mm(2).
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    Low-noise amplifier with narrow-band and wide-band input impedance matching design
    (2015-07-01)
    Huang, Zhe-Yang
    ;
    Chen, Chun-Chieh
    ;
    Hung, Chung-Chih
    ;
    資訊工程學系
    ;
    Department of Computer Science
    A low-noise amplifier (LNA) with cascode structure and shunt-peaking load is presented in this article. Both Narrow-band input impedance and wide-band input impedance LNAs were implemented in 0.18m CMOS process. Maximum power gain of the narrow-band input impedance LNA is 19.3dB; maximum power gain of the wide-band input impedance LNA is 15.3dB. Minimum noise figure of the narrow-band input impedance LNA is 3.1dB; minimum noise figure of the wide-band input impedance LNA is 3.0dB. Power consumptions including buffers are 24.5 and 25.6mW, respectively.
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    An Inductor-Coupling Resonated CMOS Low Noise Amplifier for 3.1-10.6GHz Ultra-Wideband System
    (2009)
    Huang, Zhe-Yang
    ;
    Huang, Che-Cheng
    ;
    Chen, Chun-Chieh
    ;
    Hung, Chung-Chill
    ;
    Chen, Chia-Min
    In this paper, a low power low-noise amplifier (LNA) using inductor-coupling resonated technique is designed for ultra-wideband (UWB) wireless system. The design consists of a wideband input impedance matching network, one stage cascode amplifier with inductor-coupling resonated load, and an output buffer; it was fabricated in TSMC 0.18um standard RF CMOS process. The UWB LNA gives 10.8dB power gain and 9.4GHz 3dB bandwidth (1.2GHz - 10.6GHz) while consuming only 6.2mW through a 1.2V supply, including output buffer. Over the 3.1GHz - 10.6GHz frequency band, a minimum noise figure of 3.9dB and input return loss lower than -5.7dB have been achieved.