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Ferroelectric domain triggers the charge modulation in semiconductors (invited)
(2014-08-14)
Morozovska, Anna N.
;
Eliseev, Eugene A.
;
Ievlev, Anton V.
;
Varenyk, Olexander V.
;
Pusenkova, Anastasiia S.
We consider a typical heterostructure "domain patterned ferroelectric film-ultra-thin dielectric layer-semiconductor," where the semiconductor can be an electrolyte, paraelectric or multi-layered graphene. Unexpectedly, we have found that the space charge modulation profile and amplitude in the semiconductor, that screens the spontaneous polarization of a 180-deg domain structure of ferroelectric, depends on the domain structure period, dielectric layer thickness and semiconductor screening radius in a rather non-trivial nonlinear way. Multiple size effects appearance and manifestation are defined by the relationship between these three parameters. In addition, we show that the concept of effective gap can be introduced in a simple way only for a single-domain limit. Obtained analytical results open the way for understanding of current-AFM maps of contaminated ferroelectric surfaces in ambient atmosphere as well as explore the possibilities of conductivity control in ultra-thin semiconductor layers. (C) 2014 AIP Publishing LLC.
Exploring Topological Defects in Epitaxial BiFeO3 Thin Films
(2011-02-01)
Vasudevan, Rama K.
;
Chen, Yi-Chun
;
Tai, Hsiang-Hua
;
Balke, Nina
;
Wu, Pingping
Using a combination of piezoresponse force microscopy (PFM) and phase-field modeling, we demonstrate ubiquitous formation of center-type and possible ferroelectric closure domain arrangements during polarization switching near the ferroelastic domain walls in (100) oriented rhombohedral BiFeO3. The formation of these topological defects is determined from the vertical and lateral PFM data and confirmed from the reversible changes in surface topography. These observations provide insight into the mechanisms of tip-induced ferroelastic domain control and suggest that formation of topological defect states under the action of local defect- and tip-induced fields is much more common than previously believed.
Nanoscale Control of Phase Variants in Strain-Engineered BiFeO3
(2011-08-01)
Vasudevan, Rama K.
;
Liu, Yunya
;
Li, Jiangyu
;
Liang, Wen-I
;
Kumar, Amit
Development of magnetoelectric, electromechanical, and photovoltaic devices based on mixed-phase rhombohedral-tetragonal (R-T) BiFeO3 (BFO) systems is possible only if the control of the engineered R phase variants is realized. Accordingly, we explore the mechanism of a bias induced phase transformation in this system. Single point spectroscopy demonstrates that the T -> R transition is activated at lower voltages compared to T -> - T polarization switching. With phase field modeling, the transition is shown to be electrically driven. We further demonstrate that symmetry of formed R-phase rosettes can be broken by a proximal probe motion, allowing controlled creation of R variants with defined orientation. This approach opens a pathway to designing next-generation magnetoelectronic and data storage devices in the nanoscale.
Dynamic Conductivity of Ferroelectric Domain Walls in BiFeO3
(2011-05-01)
Maksymovych, Peter
;
Seidel, Jan
;
Chu, Ying Hao
;
Wu, Pingping
;
Baddorf, Arthur P.
Topological walls separating domains of continuous polarization, magnetization, and strain in ferroic materials hold promise of novel electronic properties, that are intrinsically localized on the nanoscale and that can be patterned on demand without change of material volume or elemental composition. We have revealed that ferroelectric domain walls in multiferroic BiFeO3 are inherently dynamic electronic conductors, closely mimicking memristive behavior and contrary to the usual assumption of rigid conductivity. Applied electric field can cause a localized transition between insulating and conducting domain walls, tune domain wall conductance by over an order of magnitude, and create a quasicontinuous spectrum of metastable conductance states. Our measurements identified that subtle and microscopically reversible distortion of the polarization structure at the domain wall is at the origin of the dynamic conductivity. The latter is therefore likely to be a universal property of topological defects in ferroelectric semiconductors.
Enhanced electric conductivity at ferroelectric vortex cores in BiFeO3
(2012-01-01)
Balke, Nina
;
Winchester, Benjamin
;
Ren, Wei
;
Chu, Ying Hao
;
Morozovska, Anna N.
Topological defects in ferroic materials are attracting much attention both as a playground of unique physical phenomena and for potential applications in reconfigurable electronic devices. Here, we explore electronic transport at artificially created ferroelectric vortices in BiFeO3 thin films. The creation of one-dimensional conductive channels activated at voltages as low as 1V is demonstrated. We study the electronic as well as the static and dynamic polarization structure of several topological defects using a combination of first-principles and phase-field modelling. The modelling predicts that the core structure can undergo a reversible transformation into a metastable twist structure, extending charged domain walls segments through the film thickness. The vortex core is therefore a dynamic conductor controlled by the coupled response of polarization and electron-mobile-vacancy subsystems with external bias. This controlled creation of conductive one-dimensional channels suggests a pathway for the design and implementation of integrated oxide electronic devices based on domain patterning.
Constraining Data Mining with Physical Models: Voltage- and Oxygen Pressure-Dependent Transport in Multiferroic Nanostructures
(2015-10-01)
Streloov, Evgheni
;
Belianinov, Alexei
;
Hsieh, Ying-Hui
;
Chu, Ying-Hao
;
Kalinin, Sergei V.
Development of new generation electronic devices necessitates understanding and controlling the electronic transport in ferroic, magnetic, and optical materials, which is hampered by two factors. First, the complications of working at the nanoscale, where interfaces, grain boundaries, defects, and so forth, dictate the macroscopic characteristics. Second, the convolution of the response signals stemming from the fact that several physical processes may be activated simultaneously. Here, we present a method of solving these challenges via a combination of atomic force microscopy and data mining analysis techniques. Rational selection of the latter allows application of physical constraints and enables direct interpretation of the statistically significant behaviors in the framework of the chosen physical model, thus distilling physical meaning out of raw data. We demonstrate our approach with an example of deconvolution of complex transport behavior in a bismuth ferrite cobalt ferrite nanocomposite in ambient and ultrahigh vacuum environments. Measured signal is apportioned into four electronic transport patterns, showing different dependence on partial oxygen and water vapor pressure. These patterns are described in terms of Ohmic conductance and Schottky emission models in the light of surface electrochemistry. Furthermore, deep data analysis allows extraction of local dopant concentrations and barrier heights empowering our understanding of the underlying dynamic mechanisms of resistive switching.
Exploring Topological Defects in Epitaxial BiFeO(3) Thin Films
(2011-02-01)
Vasudevan, Rama K.
;
Chen, Yi-Chun
;
Tai, Hsiang-Hua
;
Balke, Nina
;
Wu, Pingping
Using a combination of piezoresponse force microscopy (PFM) and phase-field modeling, we demonstrate ubiquitous formation of center-type and possible ferroelectric closure domain arrangements during polarization switching near the ferroelastic domain walls in (100) oriented rhombohedral BiFeO(3). The formation of these topological defects is determined from the vertical and lateral PFM data and confirmed from the reversible changes in surface topography. These observations provide insight into the mechanisms of tip-induced ferroelastic domain control and suggest that formation of topological defect states under the action of local defect- and tip-induced fields is much more common than previously believed.
Nanoscale Control of Phase Variants in Strain-Engineered BiFeO(3)
(2011-08-01)
Vasudevan, Rama K.
;
Liu, Yunya
;
Li, Jiangyu
;
Liang, Wen-I
;
Kumar, Amit
Development of magnetoelectric, electromechanical, and photovoltaic devices based on mixed-phase rhombohedral-tetragonal (R-T) BiFeO(3) (BFO) systems is possible only if the control of the engineered R phase variants is realized. Accordingly, we explore the mechanism of a bias induced phase transformation in this system. Single point spectroscopy demonstrates that the T -> R transition is activated at lower voltages compared to T -> - T polarization switching. With phase field modeling, the transition is shown to be electrically driven. We further demonstrate that symmetry of formed R-phase rosettes can be broken by a proximal probe motion, allowing controlled creation of R variants with defined orientation. This approach opens a pathway to designing next-generation magnetoelectronic and data storage devices in the nanoscale.
Enhanced electric conductivity at ferroelectric vortex cores in BiFeO(3)
(2012-01-01)
Balke, Nina
;
Winchester, Benjamin
;
Ren, Wei
;
Chu, Ying Hao
;
Morozovska, Anna N.
Topological defects in ferroic materials are attracting much attention both as a playground of unique physical phenomena and for potential applications in reconfigurable electronic devices. Here, we explore electronic transport at artificially created ferroelectric vortices in BiFeO(3) thin films. The creation of one-dimensional conductive channels activated at voltages as low as 1V is demonstrated. We study the electronic as well as the static and dynamic polarization structure of several topological defects using a combination of first-principles and phase-field modelling. The modelling predicts that the core structure can undergo a reversible transformation into a metastable twist structure, extending charged domain walls segments through the film thickness. The vortex core is therefore a dynamic conductor controlled by the coupled response of polarization and electron-mobile-vacancy subsystems with external bias. This controlled creation of conductive one-dimensional channels suggests a pathway for the design and implementation of integrated oxide electronic devices based on domain patterning.
Dynamic Conductivity of Ferroelectric Domain Walls in BiFeO(3)
(2011-05-01)
Maksymovych, Peter
;
Seidel, Jan
;
Chu, Ying Hao
;
Wu, Pingping
;
Baddorf, Arthur P.
Topological walls separating domains of continuous polarization, magnetization, and strain in ferroic materials hold promise of novel electronic properties, that are intrinsically localized on the nanoscale and that can be patterned on demand without change of material volume or elemental composition. We have revealed that ferroelectric domain walls in multiferroic BiFeO(3) are inherently dynamic electronic conductors, closely mimicking memristive behavior and contrary to the usual assumption of rigid conductivity. Applied electric field can cause a localized transition between insulating and conducting domain walls, tune domain wall conductance by over an order of magnitude, and create a quasicontinuous spectrum of metastable conductance states. Our measurements identified that subtle and microscopically reversible distortion of the polarization structure at the domain wall is at the origin of the dynamic conductivity. The latter is therefore likely to be a universal property of topological defects in ferroelectric semiconductors.

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