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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Kao, Kuo-HsingSubject: search.filters.subject.HfO2

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    Mobility improvement of HfO2 LTPS-TFTs with nitrogen implanataion
    (2007)
    Ma, Ming-Wen
    ;
    Yang, Tsung-Yu
    ;
    Kao, Kuo-Hsing
    ;
    Su, Chun-Jung
    ;
    Chao, Tien-Sheng
    In this paper, we demonstrate the low-temperature polycrystalline silicon thin-film transistors (LTPS-TFrs) with high-k HfO2 gate dielectric and nitrogen implantation to achieve high-performance characteristics for the first time. Various nitrogen does 5 X 10(13) and 5 X 10(14) cm(-2) were implanted after gate dielectric deposition. Significant improvement 94.4% and 74.4% on transconductance G(m) and field effect mobility, respectively, are observed due to the nitrogen implantation. In addition, a substantial gate leakage current reduction over four orders is also obtained to decrease undesirable power dissipation. Finally, a high performance LTPS-TFT with low subthreshold swing 0.177 V/decade and threshold voltage about 1 V can be achieved without any other hydrogen plasma passivation treatments.
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    Impacts of nitric acid oxidation on low-temperature polycrystalline silicon TFTs with high-k gate dielectric
    (2007)
    Yang, Tsung-Yu
    ;
    Ma, Ming-Wen
    ;
    Kao, Kuo-Hsing
    ;
    Su, Chun-Jung
    ;
    Chao, Tien-Sheng
    In this paper, low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFrs) with HfO2 gate dielectric and nitric acid oxidation pre-treatment is investigated. Significant improvement on on/off current ratio and field effect mobility is observed due to the nitric acid oxidation pre-treatment. An excellent on/off current ratio and subthreshold swing, as well as low threshold voltage and I-off can be achieved without any other hydrogen passivation treatments. These improved performances can be attributed to both the high gate capacitance density using high-k gate dielectric and the good interface quality by nitric acid oxidation of poly-silicon.