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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作,涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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  • Item type:Item,
    A 340 GHz Triple-Push Oscillator With Differential Output in 40 nm CMOS
    (2014-12-01)
    Li, Chun-Hsing
    ;
    Ko, Chun-Lin
    ;
    Kuo, Chien-Nan
    ;
    Kuo, Ming-Ching
    ;
    Chang, Da-Chiang
    A low-power triple-push oscillator with differential output is proposed in this letter. By extracting signals from the same current loop, the oscillator can naturally provide differential output without any additional active circuit or passive balun required. Therefore, the output power can be increased and the chip area and power consumption can be reduced. Realized in 40 nm CMOS technology, the proposed oscillator can oscillate at 340.6 GHz while providing equivalent isotropically radiated power (EIRP) as -21.8 dBm. The power consumption is only 34.1 mW from a 0.9 V supply. The oscillator core only occupies area of 0.028 mm(2).
  • Item type:Item,
    A 37.5-mW 8-dBm-EIRP 15.5 degrees-HPBW 338-GHz Terahertz Transmitter Using SoP Heterogeneous System Integration
    (2015-02-01)
    Li, Chun-Hsing
    ;
    Chao, Tzu-Yuan
    ;
    Lai, Chih-Wei
    ;
    Chen, Wei-Cheng
    ;
    Ko, Chun-Lin
    A low-cost terahertz transmitter is proposed by using system-on-package (SoP) heterogeneous system integration. A signal source in 40-nm CMOS is integrated with an antenna array on a Benzocyclobutene carrier through a broadband low-loss terahertz interconnect. The signal source adopting triple-push oscillator topology is able to produce a differential output without any additional balun circuit. Hence, the power consumption and the chip area can be reduced. The antenna array containing 50 patch antennas is differentially excited to give simulated directivity, efficiency, and antenna gain as high as 22.6 dB, 88%, and 22 dBi, respectively, at 335 GHz. The terahertz interconnect employs a resonator coupling technique to provide low-loss and broadband performance while occupying a small area. Measured results show that the proposed terahertz transmitter can work at 338.4 GHz with equivalent isotropically radiated power (EIRP) of 8.0 dBm while consuming only 37.5 mW from a 1-V supply. The measured half-power beam-width can be as narrow as 15.5 degrees. The EIRP can be further raised to 9.5 dBm as the supply V-DD is increased to 1.3 V. The CMOS chip only occupies an area as small as 0.028 mm(2). All of the design efforts enable the proposed terahertz transmitter to feature in small form factor, low power dissipation, low cost, and high performance. To the best of the authors\' knowledge, this is the most compact, lowest power, lowest cost, and high-performance SoP-based terahertz transmitter reported thus far.
  • Item type:Item,
    On-chip transmission line Modeling and applications to millimeter-wave circuit design in 0.13um CMOS technology
    (2007)
    Ko, Chun-Lin
    ;
    Kuo, Chien-Nan
    ;
    Juang, Ying-Zong
    ;
    交大名義發表
    ;
    National Chiao Tung University
    This paper presents the on-chip transmission line modeling and applications to circuit design at millimeterwave (mm-wave) frequencies. The microstrip model of circuit simulators benefits in fast calculations of the characteristics of microstrip lines. As the structure of on-chip microstrip differs from the modeled structure, two key parameters of the microstrip model need to be modified for the different electromagnetic (EM) behavior according to the measured microstrip line. With proper parameters, the traditional transmission line model is able to accurately predict the real characteristic of on-chip microstrip lines without timeconsuming EM simulation. A mm-wave microstrip line filter and a single-stage cascode low noise amplifier (LNA) are fabricated to verify the model. All passive components for input/output matching networks and bias networks are onchip. The LNA takes the supply voltage and dc current of 1.4 V and 10 mA, respectively. A gain of 3.8dB and an input/output return loss of 8.5/7.OdB are measured at 60.3GHz. The simulation results in both circuits are in good agreement with measured data.