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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作,涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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    Grain Boundary Trap-Induced Current Transient in a 3-D NAND Flash Cell String
    (2019-04-01)
    Lin, Wei-Liang
    ;
    Tsai, Wen-Jer
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    Cheng, C. C.
    ;
    Ku, S. H.
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    Liu, Lenvis
    Transient cell current caused by the trapping/detrapping of grain boundary traps in the polycrystalline silicon (poly-Si) channel of a 3-D NAND cell string is comprehensively studied in this paper. This transient has a time constant of 10 mu s or longer and is strongly dependent on the bias history. It is also affected by the trap distribution as revealed by TCAD simulations. Sensing offset between program verify and read results in "pseudo" charge loss/gain that reduces the sensing margin. The posttreatment of the poly-Si channel is suggested to mitigate this effect.