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🏛️國立陽明交通大學機構典藏

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    Microstructures and electrical properties of V2O5-based multicomponent ZnO varistors prepared by microwave sintering process
    (1997-03-01)
    Chen, CS
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    Kuo, CT
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    Wu, TB
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    Lin, IN
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    材料科學與工程學系
    The V2O5-based ZnO varistor materials were successfully densified using microwave sintering process. The materials can reach a high density as 94.6% T.D. (theoretical density) when sintered at 800 degrees C (10 min) but the grain growth was initiated only when sintered at a higher temperature than 1000 degrees C (10 min). The varistor characteristics, including breakdown voltage (V-bk), nonlinear coefficient (alpha) and leakage current density (J(L)), degraded markedly for the samples sintered at too high temperature (i.e., T greater than or equal to 1000 degrees C) and for too long period (i.e., t greater than or equal to 10 min) that was ascribed to the occurrence of abnormal grain growth. Contrarily, the intrinsic characteristics, including potential barrier height (phi(b)) and donor density (N-d), varied only moderately with these sintering conditions. The V2O5-based ZnO materials sintered at 1000 degrees C (5 min) possessed good varistor characteristics as V-bk = 248 V/mm, alpha = 31 and J(L) = 4.6 x 10(-5) A/cm(2). The corresponding intrinsic parameters are phi(b) = 0.63 eV and N-d = 2.37 x 10(24) m(-3).
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    Microstructure and nonlinear properties of microwave-sintered ZnO-V2O5 varistors: I, effect of V2O5 doping
    (1998-11-01)
    Kuo, CT
    ;
    Chen, CS
    ;
    Lin, IN
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    The modification of the densification behavior and the grain-growth characteristics of the microwave-sintered ZnO materials, caused by the incorporation of V2O5 additives, have been systematically studied. Generally, the addition of V2O5 markedly enhances the densification rate, such that a density as high as 97.9% of the theoretical density and a grain size as large as 10 mu m can be attained for a sintering temperature as low as 800 degrees C and a soaking time as short as 10 min. Increasing the sintering temperature or soaking time does not significantly change the sintered density of the ZnO-V2O5 materials but it does monotonously increase their grain size. Varying the proportion of V2O5 in the range of 0.2-1.0 mol% does not pronouncedly modify such behavior. The leakage current density (J(L)) of these high-density and uniform-granular-structure samples is still large, which is amended by the incorporation of 0.3 mol% of Mn3O4 in the ZnO materials, in addition to 0.5 mol% of the V2O5 additives. Samples that are obtained using such a method possess good nonohmic characteristics (alpha = 23.5) and a low leakage current density (J(L) = 2.4 x 10(-6) A/cm(2)).
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    Microstructure and nonlinear properties of microwave-sintered ZnO-V2O5 varistors: II, effect of Mn3O4 doping
    (1998-11-01)
    Kuo, CT
    ;
    Chen, CS
    ;
    Lin, IN
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    The microstructure and nonlinear current-voltage characteristics of Mn3O4-doped ZnO-V2O5 ceramics, microwave-sintered at 800 degrees-1200 degrees C for 10 min, have been investigated. A high density (96% of the theoretical density) has been achieved. The incorporation of Mn3O4 additives does not significantly alter the densification behavior of the ZnO-V2O5 materials, but rather pronouncedly increases the non-linear coefficient (alpha = 23.5) and markedly suppresses their leakage current density (J(L) = 2.4 x 10(-6) A/cm(2)). On the other hand, the intrinsic properties of the materials, including the Schottky barrier height (Phi(b)) and the donor density (N-d), are only moderately modified; that is, Phi(b) = 1.16 eV and N-d = 5.4 x 10(17)/cm(3). X-ray diffractometry analyses and energy-dispersive X-ray microanalyses (via scanning electron microscopy) indicate that the V2O5 species facilitate the densification and the development of microstructure via the formation of a liquid phase (Zn-3(VO4)(2)) along the grain boundaries, whereas the Mn3O4 species markedly enhance the nonohmic behavior of the ZnO-V2O5 materials by forming the surface states along the grain boundaries.
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    The use of a biomolecular target for crystalline carbon nitride film deposition by Ar ion-beam sputtering without any other source of nitrogen
    (1998-06-29)
    Chen, LC
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    Lu, TR
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    Kuo, CT
    ;
    Bhusari, DM
    ;
    Wu, JJ
    Carbon nitride films have been synthesized by argon ion-beam sputtering from a biomolecular compound target, 8-aza-6-aminopurine (C4N6H4) The compound has a six-membered ring structure similar to that existing in the hypothetical beta-C3N4. Except fur the target material, no other source of nitrogen was used during sputtering deposition. It was found that crystalline carbon nitride with high N/C atomic composition ratios of 0.43-0.56 can be formed even at room temperature. The infrared spectra of the film exhibit two peaks at 1383 and 1643 cm(-1), corresponding to C-N and C=N stretching modes, respectively. No detectable peak at 2200 cm(-1) (C=N stretching mode) is observed. Both x-ray diffraction and transmission electron microscopy show a very strong broad peak at 3.2 Angstrom, comparable to the d spacing of the (110) orientation in the beta-C3N4 structure. However, it is suggested that the film contains a nanocrystalline phase with a crystal structure yet to be determined. (C) 1998 American Institute of Physics.
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    Fabrication and field emission characteristics of highly ordered titanium oxide nanodot arrays
    (2005)
    Chen, PL
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    Huang, WJ
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    Chang, JK
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    Kuo, CT
    ;
    Pan, FM
    A field emission triode device has been fabricated using self-organized nanodot arrays as the electron emission source. Uniform nanodot arrays of titanium oxide were prepared from the Al/Ti film stack on silicon substrates by electrochemical anodization. The field emission triodes with titanium oxide nanodot emitters exhibited a low gate turn-on voltage of 45 V and high emission current density of 25 mA/cm(2) at 120 V. The excellent electric properties and easily controllable fabrication process of the nanodot triodes show potential applications for field emission displays and vacuum microelectronics. (c) 2005 The Electrochemical Society.
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    Brazing characteristics of diamond on various substrates with different brazing alloys
    (1995)
    Kuo, CT
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    Lin, CR
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    Lien, HM
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    材料科學與工程學系
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    Department of Materials Science and Engineering