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Author: search.filters.author.Kuo, CTSubject: search.filters.subject.chemical vapor deposition

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Now showing 1 - 5 of 5
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    Crystalline SiCN: a hard material rivals to cubic BN
    (1999-11-01)
    Chen, LC
    ;
    Chen, KH
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    Wei, SL
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    Kichambare, PD
    ;
    Wu, JJ
    Growth and mechanical properties of SiCN materials prepared by microwave plasma enhanced chemical vapor deposition (CVD) as well as electron cyclotron resonance plasma CVD are reported. Large (several tens of microns), well-faceted ternary SiCN crystals were grown by microwave plasma-enhanced chemical vapor deposition. whereas amorphous SiCN films were deposited by ECR-CVD. The ternary crystalline compound (C; Si)(x)N-y exhibits a hexagonal structure and consists of a network wherein the Si and C are substitutional elements. While the N content of the crystalline compound is about 50 at.%, the extent of Si substitution varies and can be as low as 10 at.%. The amorphous SIGN films contain only about 30 at.% N. Nano-indentation studies were employed to investigate the mechanical properties of the SiCN materials. From the load versus displacement curves. we estimated the hardness and the effective modulus of the SIGN crystals to be around 30 and 321.7 GPa, respectively. The corresponding values for the amorphous SiCN were around 22 and 164.4 GPa, respectively. These values are well above most reported values for CN films. (C) 1999 Elsevier Science S.A. All rights reserved.
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    Field emission, structure, cathodoluminescence and formation studies of carbon and Si-C-N nanotubes
    (2002-03-01)
    Chang, HL
    ;
    Lin, CH
    ;
    Kuo, CT
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Catalyst growth carbon and Si-C-N nanotubes have been synthesized successfully by microwave plasma chemical vapor deposition (MPCVD) method using CH4 + H-2 or CH4 + N-2 as gas sources, Si columns as additional Si solid sources, and Fe, Fe-Y, Co-Ni as catalysts. Nanotubes consisting of Si, C and N were made under process gases of CH4 + N-2, and with or without additional Si columns. Well-aligned and nested nanotubes were observed dependent on the catalyst materials. Besides, Si-C-N nanotubes were observed as bamboo-Eke structure. The as-grown nanotubes were purified in an air furnace to investigate their CL signal shift for potential application involving blue light emission. The field emission results indicate that the emission current densities can be above 10 mA/cm(2) at 10 V/mum, and aligned nanotubes belong to better current stability at a constant electric field than nested nanotubes. Nanotubes with a low I-D/I-G ratio (=0.23) via Raman analysis are achieved. The mechanisms of formation for carbon nanotubes and Si-C-N nanotubes are also discussed. (C) 2002 Elsevier Science B.V. All rights reserved.
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    Growth of the large area horizontally-aligned carbon nanotubes by ECR-CVD
    (2002-12-02)
    Hsu, CM
    ;
    Lin, CH
    ;
    Chang, HL
    ;
    Kuo, CT
    ;
    材料科學與工程學系
    For potential applications of carbon nanotubes (CNTs) as connectors in microelectronic devices, the process to synthesize the large area horizontally-aligned CNTs on 100 mm (4 inch) Si wafers was developed, using electron cyclotron resonance chemical vapor deposition, with CH, and H, as the source gases and Co as the catalyst. The results show that vertical and horizontal CNTs can be obtained by manipulating the electric field applied on the substrate and flow direction of the gases. In the present deposition conditions, the horizontal CNTs show better field emission properties than vertical CNTs. This may be due to the blocking effect of catalysts at the tips and to the diminishment of the effective emission area from defects of vertical CNTs body. (C) 2002 Elsevier Science B.V. All rights reserved.
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    Iron and cobalt silicide catalysts-assisted carbon nanostructures on the patterned Si substrates
    (2002-12-02)
    Chang, HL
    ;
    Lin, CH
    ;
    Kuo, CT
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Catalyst-assisted carbon nanotubes (CNTs) and carbon nano-rods were synthesized on the patterned or un-patterned Si wafer by microwave plasma chemical vapor deposition, using iron or cobalt silicide catalysts. Controllable carbon nanostructures were achieved by manipulating carbon and nitrogen concentration in the source gases, catalyst materials, and patterned wafer application. CNTs were synthesized under a high ratio of CH4/H-2 = 0.1, while carbon nano-rods were synthesized under a low ratio of CH4/H-2=0.01. Introducing N-2 gas into CH4/H-2 source gases gives rise to bamboo-like CNTs formation. Selective CNTs depositions were applied on (a) parallel Fe-coated line arrays, (b) CoSix-coated hole arrays. This is a novel method that is compatible with Si microelectronic device manufacturing. The field emission results indicate that the emission current density can be above 1 mA/cm(2) at 3.97 V/mum, and hollow like CNTs belong to better emission current than bamboo-like CNTs. Growth models of different carbon nanostructures are proposed. (C) 2002 Elsevier Science B.V. All rights reserved.
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    The role of nitrogen in carbon nanotube formation
    (2003-10-01)
    Lin, CH
    ;
    Chang, HL
    ;
    Hsu, CM
    ;
    Lo, AY
    ;
    Kuo, CT
    To examine the role of nitrogen, Co- and Ni-coated substrates were pretreated with three different gas compositions to compare the pretreated catalyst surfaces; the Fe, Co and Ni foils were subjected to carbon nanotube (CNT) growth experiments with CH4/H-2 and CH4/N-2 as source gases; the catalyst pretreatment plus the CNT growth experiments on Co- and Ni-coated Si substrates were carried out using both microwave plasma chemical vapor deposition and electron cyclotron resonance chemical vapor deposition (ECR-CVD) under different nitrogen-containing gases. The results show that the role of nitrogen may be summarized as follows: by comparing with hydrogen plasma, the bombardment energy of nitrogen plasma is greater. Therefore, the presence of nitrogen during CNT growth can keep the front catalyst surface clean and active to prolong surface passivation to enhance carbon bulk diffusion. The higher temperature due to higher bombardment energy of nitrogen plasma can promote agglomeration effects during catalyst pretreatment and the initial stage of CNT growth to produce larger size nano-particles. The presence of nitrogen is a favorable condition for formation of the bamboo-like CNTs, but not a necessary condition. Another favorable condition for formation of the bamboo-like CNTs is to deposit CNTs by ECR-CVD. (C) 2003 Elsevier Science B.V. All rights reserved.