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Author: search.filters.author.Kuo, CTSubject: search.filters.subject.diamond films

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Now showing 1 - 5 of 5
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    High adhesion and quality diamond films on steel substrate
    (1998-06-01)
    Lin, CR
    ;
    Kuo, CT
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    A process to deposit a diamond coating on steel substrates has been successfully developed. It includes the electroplating of nickel by using an electrolyte dispersed with micro-diamonds, and then a diamond deposition through a microwave plasma chemical vapor deposition system. The diamond films were characterized by Raman and CL spectroscopy, XRD, SEM and SEM line scanning. The results show a high diamond crystal quality, low residual stress (about 0.67 GPa) and high nucleation density. The adhesion of the films was evaluated by a cutting test and an interface examination. The results show that the retentivity of the diamond grits in the films after the cutting test is much better than that in the commercial electroformed diamond tools. The advantages of the process are: (1) the formation of nickel-carbon-hydrogen alloys to enhance diamond nucleation and growth, (2) the micro-diamonds acting as the seeds for diamond nucleation and growth, and forming effective mechanical interlocking with the nickel interlayer, and (3) the formation of good diffusion bonding of the nickel interlayer with the steel substrate. (C) 1998 Elsevier Science S.A.
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    Improvement in adhesion of diamond films on cemented WC substrate with Ti-Si interlayers
    (1998-12-01)
    Lin, CR
    ;
    Kuo, CT
    ;
    Chang, RM
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Diamond films were deposited on the cemented WC+(3-5)% Co substrates by a microwave plasma chemical vapor deposition system. The substrates were pretreated with various processing steps before diamond deposition, including: polishing, etching for Co removal, Ti coating by DC sputter, and amorphous Si coating by E-gun. The residual stress of the films was determined by both Raman shift and low incident beam angle X-ray diffraction (LIBAD) methods. The adhesion of the films was evaluated by indentation adhesion testing. The him morphology and film-substrate interface structure were examined by SEM and Auger electron spectroscopy, respectively. The results show that Ti-Si can be a good interlayer to improve film adhesion and inhibit diffusion of Co to the substrate surface on diamond nucleation. This is due to the formation of strong TiC and SiC bonding to enhance film adhesion; Si acts as a promoter for diamond nucleation, and the residual stress with application of interlayer is much lower than that interlayer-free. The results also show the existence of an optimum Ti thickness for the best film adhesion. (C) 1998 Elsevier Science S.A. All rights reserved.
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    Formation of carbon cluster on the surface of diamond films for improving electron field emission properties
    (2002-10-01)
    Chang, YC
    ;
    Tu, JC
    ;
    Kuo, CT
    ;
    Wang, CY
    ;
    Lin, IN
    The electron field emission properties of the diamond films were significantly improved via the formation of nanosized carbon clusters on their surface. The microstructures and Raman spectroscopy are markedly altered when the diamond films were coated with a thin layer of Fe/Co films (< 10 nm) and then post-annealed at high enough temperature ( > 800degreesC). The turn-on field was decreased from 14.8 to 7.6 V/mum and the electron field emission current density was increased more than 2 order of magnitude, from 20 to 2400 muA/cm(2), due to post-annealing process. (C) 2002 Elsevier Science B.V. All rights reserved.
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    Nondestructive characterization of the film quality and stress states in diamond films on various substrates
    (2000)
    Kuo, CT
    ;
    Wu, JY
    ;
    Chou, SL
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Diamond films deposited on various substrates were characterized nondestructively by Raman spectroscopy and X-ray diffraction (XRD) to evaluate their stress states and film quality. The X-ray diffraction method is further divided into two methods, i.e., the low incident beam angle X-ray diffraction (LIBAD), and Clemens-Bain method for the textured films. The whole-pattem-fitting structure refinement method, or called "Rietveld method" was adapted in XRD method to improve its accuracy. The film adhesion, film morphology and film structures including its non-diamond carbon content, crystal size, texture coefficient, film thickness and surface roughness were also examined. The correlations between structure and residual stress of the films on various substrates and under various deposition and pretreatment conditions were analyzed. The feasibility of nondestructive evaluation the Blm quality and stress states, and the origins of the residual stress of the films were discussed.
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    Application of heat treatment and dispersive strengthening concept in interlayer deposition to enhance diamond film adherence
    (1997-10-31)
    Lin, CR
    ;
    Kuo, CT
    ;
    Chang, RM
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Two different deposition processes were carried out to enhance adherence of diamond films on WC + 3 similar to 5%Co substrate with Ti-Si as the interlayer. One process can be called two-step diamond deposition process. Another process can be called interlayer heat treatment process. Diamond films were deposited by a microwave plasma chemical vapor deposition system. Ti and Si interlayer are deposited by DC sputter and an E-gun, respectively. Film morphologies, interface structure and film qualify were examined by SEM, XRD, Auger electron spectroscopy and Raman spectroscopy. The residual stresses and adhesion strengths of the films were determined by Raman spectroscopy and indentation adhesion testing, respectively. Comparing the regular one-step diamond deposition process with the present two different new processes, the average dP/dX values, which are a measure of the adherence of the film, are 354 kgf/mm, 494 kgf/mm and 787 kgf/mm, respectively. In other words, the interlayer heat treatment process gives the best film adherence on average. For the two-step diamond deposition process, the interlayer thickness and the percent diamond surface coverage of the first diamond deposition step are the main parameters, and there exists an optimum Ti thickness and percent diamond coverage for the best film adherence. The main contribution to better film adherence is not a large difference in residual stress, but is due to the following reasons. The interlayer heat treatment can transform amorphous Si to polycrystalline Si, and may form strong TiC and SiC bonding. The polycrystalline Si and the diamond particles from the first diamond deposition step can be an effective seeds to enhance diamond nucleation. Published by Elsevier Science S.A.