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Now showing 1 - 10 of 13

Novel Metamorphic HEMTs With Highly Doped InGaAs Source/Drain Regions for High Frequency Applications
(2010-10-01)
Sahoo, Kartika Chandra
;
Kuo, Chien-I
;
Li, Yiming
;
Chang, Edward Yi
;
材料科學與工程學系
In this paper, we report the first result of a strained In(0.52)Ga(0.48) As channel high-electron mobility transistor (HEMT) featuring highly doped In(0.4)Ga(0.6) As source/drain (S/D) regions. A lattice mismatch of 0.9% between In(0.52)Ga(0.48) As and In(0.4)Ga(0.6) As S/D has resulted in a lateral strain in the In(0.52)Ga(0.48) As channel region, where the series resistance is reduced with highly doped S/D regions. An experimentally validated device simulation is advanced for the proposed HEMT, and the results of this paper have shown that there are 60% drive-current and 100% transconductance improvements, compared with the conventional structure. A remarkable 150-GHz increase in the cutoff frequency has been seen for the proposed structure over the conventional one as well for the shown devices.
V-Band Flip-Chip Assembled Gain Block Using In0.6Ga0.4As Metamorphic High-Electron-Mobility Transistor Technology
(2011-10-01)
Chiang, Che-Yang
;
Hsu, Heng-Tung
;
Wang, Chin-Te
;
Kuo, Chien-I
;
Hsu, Heng-Shou
This study fabricated a 150 nm In0.6Ga0.4As metamorphic high-electron-mobility transistor (mHEMT) device with flip-chip packaging. The packaged device exhibited favorable DC characteristics with I-DS = 350 mA/mm and a transconductance of 600 mS/mm at V-DS = 0.5V. A maximum available gain (MAG) of 6.5 dB at 60 GHz was achieved with 10 mW DC power consumption. A two-stage gain block was designed and fabricated. The gain block exhibited a small signal gain of 9 dB at 60 GHz with only 20 mW DC power consumption. Such superior performance is comparable to the mainstream submicron complimentary metal-oxide-semiconductor (CMOS) technology with lower power consumption. (C) 2011 The Japan Society of Applied Physics
RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (InxGa1-xAs)(m)/(InAs)(n) Superlattice-Channel Structure for Millimeter-Wave Applications
(2010-07-01)
Kuo, Chien-I
;
Hsu, Heng-Tung
;
Chen, Yu-Lin
;
Wu, Chien-Ying
;
Chang, Edward Yi
High-performance metamorphic high-electron mobility transistors (MHEMTs) using an (InxGa1-xAs)(m)/(InAs)(n) superlattice structure as a channel layer have been fabricated successfully. These HEMTs with 80-nm gate length exhibited a high drain current density of 392 mA/mm and a transconductance of 991 mS/mm at 1.2-V drain bias. Compared with a regular InxGa1-xAs channel, the superlattice-channel HEMTs showed an outstanding performance due to the high electron mobility and better carrier confinement in the (InxGa1-xAs)(m)/(InAs)(n) channel layer. When biased at 1.2 V, the current gain cutoff frequency (f(T)) and the maximum oscillation frequency (f(max)) were extracted to be 304 and 162 GHz, respectively. As for noise performance, the device demonstrated a 0.75-dB minimum noise figure(NFmin) with an associated gain of 9.6 dB at 16 GHz. Such superior performance has made the devices with a superlattice channel well suitable for millimeter-wave applications.
Quantum Well InAs/AlSb/GaSb Vertical Tunnel FET With HSQ Mechanical Support
(2015-05-01)
Zeng, Yuping
;
Kuo, Chien-I
;
Hsu, Chingyi
;
Najmzadeh, Mohammad
;
Sachid, Angada
A type-III (broken gap) band alignment heterojunction vertical in-line InAs/AlSb/GaSb tunnel FET, including a 2-nm-thin AlSb tunneling barrier is demonstrated. The impact of overlap and underlap gate is studied experimentally and supported further by quasi-stationary 2-D TCAD Sentaurus device simulations. Hydrogen silsesquioxane is used as a novel mechanical support structure to suspend the 10-nm-thin InAs drain with enough undercut to be able to demonstrate an overlap gate architecture. The overlap gate InAs/AlSb/GaSb TFET shows an ON current density of 22 mu A/mu m(2) at V-GS = V-DS = 0.4 V and the subthreshold slope is 194 mV/decade at room temperature and 46 mV/decade at 100 K.
An 80 nm In(0.7)Ga(0.3)As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications
(2010-01-01)
Wang, Chin-Te
;
Kuo, Chien-I
;
Lim, Wee-Chin
;
Hsu, Li-Han
;
Hsu, Heng-Tung
The fabrication process of an 80 nm In(0.7)Ga(0.3)As MHEMT device with flip-chip packaging on Al(2)O(3) substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high I(DS) = 425 mA/mm and high g(m) = 970 mS/mm at V(DS) = 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NF(min))below 2 dB at 60 GHz, showing the feasibility of flip-chip packaged In(0.7)Ga(0.3)As MHEMT device for low noise applications at W-band.
V-Band Flip-Chip Assembled Gain Block Using In(0.6)Ga(0.4)As Metamorphic High-Electron-Mobility Transistor Technology
(2011-10-01)
Chiang, Che-Yang
;
Hsu, Heng-Tung
;
Wang, Chin-Te
;
Kuo, Chien-I
;
Hsu, Heng-Shou
This study fabricated a 150 nm In(0.6)Ga(0.4)As metamorphic high-electron-mobility transistor (mHEMT) device with flip-chip packaging. The packaged device exhibited favorable DC characteristics with I(DS) = 350 mA/mm and a transconductance of 600 mS/mm at V(DS) = 0.5V. A maximum available gain (MAG) of 6.5 dB at 60 GHz was achieved with 10 mW DC power consumption. A two-stage gain block was designed and fabricated. The gain block exhibited a small signal gain of 9 dB at 60 GHz with only 20 mW DC power consumption. Such superior performance is comparable to the mainstream submicron complimentary metal-oxide-semiconductor (CMOS) technology with lower power consumption. (C) 2011 The Japan Society of Applied Physics
A Novel Metamorphic High Electron Mobility Transistors with (In(x)Ga(1-x)As)(m)/(InAs)(n) Superlattice Channel Layer for Millimeter-Wave Applications
(2009)
Kuo, Chien-I
;
Hsu, Heng-Tung
;
Lu, Jung-Chi
;
Chang, Edward Yi
;
Wu, Chien-Ying
High performance MHEMTs using (In(x)Ga(1-x)As)(m)/(InAs)(n) superlattice structure as a channel layer have been fabricated successfully. These HEMTs with 80 nm gate length exhibit high drain current density of 392 mA/mm at drain bias 1.0 V and transconductance of 991 mS/mm at drain bias 1.2 V. Comparison with regular In(x)Ga(1-x)As channel, the superlattice channel HEMTs show an outstanding performance because of high electron mobility, and better carrier confinement in the (In(x)Ga(1-x)As)(m)/(InAs)(n) channel layer. The current gain cutoff frequency (f(T)) and maximum oscillation frequency (f(max)) were extracted to be 304 GHz and 162 GHz, respectively. The device demonstrated a 0.75 dB noise figure with an associated gain 9.6 dB at 16 GHz. The excellent device performance shows that the superlattice channel can be practically used for high-frequency and millimeter-wave application.
InAs channel-based quantum well transistors for high-speed and low-voltage digital applications
(2008)
Kuo, Chien-I
;
Hsu, Heng-Tung
;
Chang, Edward Yi
;
材料科學與工程學系
;
Department of Materials Science and Engineering
High-performance indium arsenic (InAs) channel-based quantum well field-effect transistors (QWFETs) have been fabricated. A superior drain-source current density of 1015 mA/mm was achieved, with a high transconductance of 1900 mS/mm when the drain (V(DS)) was biased at 0.5 V. The current gain cutoff frequency (f(T)) and maximum oscillation frequency (f(max)) were extracted to be 393 and 260 GHz, respectively. A very low gate delay of 0.54 ps was also achieved at a 0.5 V drain bias. Compared to a silicon n-channel metal-oxide semiconductor field-effect transistor, the QWFETs exhibited a better radio-frequency performance with lower dc power consumption, which indicates the great potential for high-speed and low-voltage digital applications. (C) 2008 The Electrochemical Society.
Evaluation of RF and logic performance for 80 nm InAs/InGaAs composite channel HEMTs using gate sinking technology
(2007)
Kuo, Chien-I
;
Hsu, Heng-Tung
;
Chang, Chia-Yuan
;
Chang, Edward Yi
;
Hsu, Heng-Shou
80-nm-gate In(0.7)Ga(0.3)As/InAs/In(0.7)Ga(0.3)As composite channel high-electron mobility transistors (HEMTs) fabricated using platinum (Pt) buried gate as the Schottky contact metal were evaluated for RF and logic application. After gate sinking at the 250 degrees C for 3 minutes, the device exhibited a high g. value of 1590mS/mm at V(d) = 0.5V and the current gain cutoff frequency f(T) was measured to be 494 GHz. The intrinsic gate delay time was calculated to be 0.78 psee at supply voltage of 0.6 V. This is the highest f(T) achieved for 80 nm gate length HEMT devices. These superior performances are attributed to the reduction of distance between. gate and channel, and the reduction of parasitic gate capacitances during gate-sinking process.
RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (In(x)Ga(1-x)As)(m)/(InAs)(n) Superlattice-Channel Structure for Millimeter-Wave Applications
(2010-07-01)
Kuo, Chien-I
;
Hsu, Heng-Tung
;
Chen, Yu-Lin
;
Wu, Chien-Ying
;
Chang, Edward Yi
High-performance metamorphic high-electron mobility transistors (MHEMTs) using an (In(x)Ga(1-x)As)(m)/(InAs)(n) superlattice structure as a channel layer have been fabricated successfully. These HEMTs with 80-nm gate length exhibited a high drain current density of 392 mA/mm and a transconductance of 991 mS/mm at 1.2-V drain bias. Compared with a regular In(x)Ga(1-x)As channel, the superlattice-channel HEMTs showed an outstanding performance due to the high electron mobility and better carrier confinement in the (In(x)Ga(1-x)As)(m)/(InAs)(n) channel layer. When biased at 1.2 V, the current gain cutoff frequency (f(T)) and the maximum oscillation frequency (f(max)) were extracted to be 304 and 162 GHz, respectively. As for noise performance, the device demonstrated a 0.75-dB minimum noise figure(NF(min)) with an associated gain of 9.6 dB at 16 GHz. Such superior performance has made the devices with a superlattice channel well suitable for millimeter-wave applications.

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