<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

Filters

2007 - 20093

Settings

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Kuo, Chien-ISubject: search.filters.subject.InAs-channel

Search Results

Now showing 1 - 3 of 3
  • Thumbnail Image
    Item type:Item,
    A 40-nm-Gate InAs/In(0.7)Ga(0.3)As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f(T)
    (2009)
    Kuo, Chien-I
    ;
    Hsu, Heng-Tung
    ;
    Wu, Chien-Ying
    ;
    Chang, Edward Yi
    ;
    Miyamoto, Yasuyuki
    A 40-nm T-gate high-electron-mobility-transistor with InAs/In(0.7)Ga(0.3)As composite-channel has been fabricated. The device exhibits a transconductance (g.) of 2200 mS/mm, a cutoff frequency f(T) of 506 GHz and a minimum noise figure of 1.21 dB at a frequency of 58 GHz. These performances make the device well-suited for millimeter-wave or sub-millimeter-wave applications.
  • Thumbnail Image
    Item type:Item,
    Investigation of impact ionization in InAs-channel HEMT ford high-speed and low-power applications
    (2007-10-01)
    Chang, Chia-Yuan
    ;
    Hsu, Heng-Tung
    ;
    Chang, Edward Yi
    ;
    Kuo, Chien-I
    ;
    Datta, Suman
    An 80-nm InP high electron mobility transistor (HEMT) with InAs channel and InGaAs subchannels has been fabricated. The high current gain cutoff frequency (f(t)) of 310 GHz and the maximum oscillation frequency (f(max)) of 330 GHz were obtained at V-DS = 0.7 V due to the high electron mobility in the InAs channel. Performance degradation was observed on the cutoff frequency (f(t)) and the corresponding gate delay time caused by impact ionization due to a low energy bandgap in the InAs channel. DC and RF characterizations on the device have been performed to determine the proper bias conditions in avoidance of performance degradations due to the impact ionization. With the design of InGaAs/InAs/InGaAs composite channel, the impact ionization was not observed until the drain bias reached 0.7 V, and at this bias, the device demonstrated very low gate delay time of 0.63 ps. The high performance of the InAs/InGaAs HEMTs demonstrated in this letter shows great potential for high-speed and very low-power logic applications.
  • Thumbnail Image
    Item type:Item,
    Investigation of Impact Ionization from In(x)Ga(1-x)As to InAs Channel HEMTs for High Speed and Low Power Applications
    (2008)
    Kuo, Chien-I
    ;
    Hsu, Heng-Tung
    ;
    Chang, Edward Yi
    ;
    Chang, Chia-Ta
    ;
    Chang, Chia-Yuan
    80-nm high electron mobility transistors (HEMTs) with different Indium content in In(x)Ga(1-x)As channel from 52%, 70% to 100% have been fabricated. Device performances degradation were observed on the DC measurement and RF characteristics caused by impact ionization at different drain bias, >0.8V (InAs/In(0.7)Ga(0.3)As), > 1V (In(0.7)Ga(0.3)As) and > 1.5V (In(0.52)Ga(0.48)As), respectively. The impact ionization phenomenon should be avoided for high speed, low power application because it limits the highest drain bias of the device which in turn limits the drift velocity under specific applied electric field.