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Novel Metamorphic HEMTs With Highly Doped InGaAs Source/Drain Regions for High Frequency Applications
(2010-10-01)
Sahoo, Kartika Chandra
;
Kuo, Chien-I
;
Li, Yiming
;
Chang, Edward Yi
;
材料科學與工程學系
In this paper, we report the first result of a strained In(0.52)Ga(0.48) As channel high-electron mobility transistor (HEMT) featuring highly doped In(0.4)Ga(0.6) As source/drain (S/D) regions. A lattice mismatch of 0.9% between In(0.52)Ga(0.48) As and In(0.4)Ga(0.6) As S/D has resulted in a lateral strain in the In(0.52)Ga(0.48) As channel region, where the series resistance is reduced with highly doped S/D regions. An experimentally validated device simulation is advanced for the proposed HEMT, and the results of this paper have shown that there are 60% drive-current and 100% transconductance improvements, compared with the conventional structure. A remarkable 150-GHz increase in the cutoff frequency has been seen for the proposed structure over the conventional one as well for the shown devices.
RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (InxGa1-xAs)(m)/(InAs)(n) Superlattice-Channel Structure for Millimeter-Wave Applications
(2010-07-01)
Kuo, Chien-I
;
Hsu, Heng-Tung
;
Chen, Yu-Lin
;
Wu, Chien-Ying
;
Chang, Edward Yi
High-performance metamorphic high-electron mobility transistors (MHEMTs) using an (InxGa1-xAs)(m)/(InAs)(n) superlattice structure as a channel layer have been fabricated successfully. These HEMTs with 80-nm gate length exhibited a high drain current density of 392 mA/mm and a transconductance of 991 mS/mm at 1.2-V drain bias. Compared with a regular InxGa1-xAs channel, the superlattice-channel HEMTs showed an outstanding performance due to the high electron mobility and better carrier confinement in the (InxGa1-xAs)(m)/(InAs)(n) channel layer. When biased at 1.2 V, the current gain cutoff frequency (f(T)) and the maximum oscillation frequency (f(max)) were extracted to be 304 and 162 GHz, respectively. As for noise performance, the device demonstrated a 0.75-dB minimum noise figure(NFmin) with an associated gain of 9.6 dB at 16 GHz. Such superior performance has made the devices with a superlattice channel well suitable for millimeter-wave applications.
Novel Metamorphic HEMTs With Highly Doped InGaAs Source/Drain Regions for High Frequency Applications
(2010-10-01)
Sahoo, Kartika Chandra
;
Kuo, Chien-I
;
Li, Yiming
;
Chang, Edward Yi
;
傳播研究所
In this paper, we report the first result of a strained In(0.52)Ga(0.48) As channel high-electron mobility transistor (HEMT) featuring highly doped In(0.4)Ga(0.6) As source/drain (S/D) regions. A lattice mismatch of 0.9% between In(0.52)Ga(0.48) As and In(0.4)Ga(0.6) As S/D has resulted in a lateral strain in the In(0.52)Ga(0.48) As channel region, where the series resistance is reduced with highly doped S/D regions. An experimentally validated device simulation is advanced for the proposed HEMT, and the results of this paper have shown that there are 60% drive-current and 100% transconductance improvements, compared with the conventional structure. A remarkable 150-GHz increase in the cutoff frequency has been seen for the proposed structure over the conventional one as well for the shown devices.
Improvement on the noise performance of InAs-based HEMTs with gate sinking technology
(2010-11-01)
Hsu, Heng-Tung
;
Kuo, Chien-I
;
Chang, Edward Y.
;
Kuo, Fang-Yao
;
材料科學與工程學系
Improvement on the RF and noise performance for 80 nm InAs/In(0.7)Ga(0.3)As high-electron mobility transistor (HEMT) through gate sinking technology is presented. After gate sinking at 250 degrees C for 3 min, the device exhibited a high transconductance of 1900 mS/mm at a drain bias of 0.5 V with 1066 mA/mm drain-source saturation current. A current-gain cutoff frequency (f(T)) of 113 GHz and a maximum oscillation frequency (f(max)) of 110 GHz were achieved at extremely low drain bias of 0.1 V. The 0.08 x 40 mu m(2) device with gate sinking demonstrated 0.82 dB minimum noise figure and 14 dB associated gain at 17 GHz with only 1.14 mW DC power consumption. Significant improvement in RF and noise performance was mainly attributed to the reduction of gate-to-channel distance together with the parasitic source resistance through gate sinking technology. (C) 2010 Elsevier B.V. All rights reserved.
Investigation of Characteristics of Al2O3/n-In (x) Ga1-x As (x=0.53, 0.7, and 1) Metal-Oxide-Semiconductor Structures
(2013-08-01)
Trinh, Hai-Dang
;
Lin, Yueh-Chin
;
Kuo, Chien-I
;
Chang, Edward Yi
;
Hong-Quan Nguyen
The electrical properties of Al2O3/n-InGaAs metal-oxide-semiconductor capacitors (MOSCAPs) with In content of 0.53, 0.7, and 1 (InAs) have been investigated. Results show small capacitance-voltage (C-V) frequency dispersion in accumulation (1.70% to 1.85% per decade) for these MOSCAPs, mostly being assigned to border traps in Al2O3. With higher In content, shorter minority-carrier response time and smaller C-V hysteresis are observed. The reduction of C-V hysteresis might be related to the reduction of Ga-bearing oxides in Al2O3/InGaAs interfaces as indicated by x-ray photoelectron spectroscopy.
A Novel Metamorphic High Electron Mobility Transistors with (In(x)Ga(1-x)As)(m)/(InAs)(n) Superlattice Channel Layer for Millimeter-Wave Applications
(2009)
Kuo, Chien-I
;
Hsu, Heng-Tung
;
Lu, Jung-Chi
;
Chang, Edward Yi
;
Wu, Chien-Ying
High performance MHEMTs using (In(x)Ga(1-x)As)(m)/(InAs)(n) superlattice structure as a channel layer have been fabricated successfully. These HEMTs with 80 nm gate length exhibit high drain current density of 392 mA/mm at drain bias 1.0 V and transconductance of 991 mS/mm at drain bias 1.2 V. Comparison with regular In(x)Ga(1-x)As channel, the superlattice channel HEMTs show an outstanding performance because of high electron mobility, and better carrier confinement in the (In(x)Ga(1-x)As)(m)/(InAs)(n) channel layer. The current gain cutoff frequency (f(T)) and maximum oscillation frequency (f(max)) were extracted to be 304 GHz and 162 GHz, respectively. The device demonstrated a 0.75 dB noise figure with an associated gain 9.6 dB at 16 GHz. The excellent device performance shows that the superlattice channel can be practically used for high-frequency and millimeter-wave application.
RF and logic performance improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel HEMT using gate-sinking technology
(2008-04-01)
Kuo, Chien-I
;
Hsu, Heng-Tung
;
Chang, Edward Yi
;
Chang, Chia-Yuan
;
Miyamoto, Yasuyuki
Eighty-nanometer-gate In0.7Ga0.3As/InAs/ In0.7Ga0.3As composite-channel high-electron mobility transistors (HEMTs), which are fabricated using platinum buried gate as the Schottky contact metal, were evaluated for RF and logic application. After gate sinking at 250 degrees C for 3 min, the device exhibited a high g(m) value of 1590 mS/mm at V-d = 0.5 V, the current-gain cutoff frequency f(T) was increased from 390 to 494 GHz, and the gate-delay time was decreased from 0.83 to 0.78 ps at supply voltage of 0.6 V. This is the highest f(T) achieved for 80-nm-gate-length HEMT devices. These superior performances are attributed to the reduction of distance between gate and channel and the reduction of parasitic gate capacitances during the gate-sinking process. Moreover, such superior performances were achieved through a very simple and straightforward fabrication process with optimal epistructure of the device.

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