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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Kuo, Chien-NanSubject: search.filters.subject.THz

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Now showing 1 - 5 of 5
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    Enhancement of CMOS THz Imaging Sensing By Packaging Technology
    (2017-01-01)
    Kuo, Chien-Nan
    ;
    Chen, Wei-Cheng
    ;
    Chiu, Te-Yen
    ;
    Li, Chun-Hsing
    ;
    電子工程學系及電子研究所
    Terahertz imaging sensing provides numerous attractive applications in different areas, for example, biology and medicine. CMOS technology benefits an imaging system in low cost and a small form factor. The technology advance is technically viable for circuit design in such high frequencies. Lossy silicon substrate, however, still degrades system performance. We will discuss the techniques of performance enhancement.
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    Low-Cost High-Performance CMOS Terahertz Imaging System
    (2015)
    Li, Chung Hsing
    ;
    Yan, Tzu-Chao
    ;
    Chang, Yuhsin
    ;
    Chen, Chyong
    ;
    Kuo, Chien-Nan
    CMOS technology has found its way in THz imaging applications. Utilizing the plasma wave theory, a MOSFET device can detect THz radiation beyond the cutoff frequency. Assisted by the system-on-packaging technique, a CMOS source delivers radiation power more effectively. An imaging system demonstrates that a low-cost CMOS solution is feasible.
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    A Broadband Interconnect for THz Heterogeneous System Integration
    (2013)
    Li, Chun-Hsing
    ;
    Wu, Jan-Jr
    ;
    Kuo, Chien-Nan
    ;
    Cheng, Yu-Ting
    ;
    Kuo, Ming-Ching
    A broadband interconnect for THz heterogeneous system integration is proposed using a resonator coupling technique. Two resonators, deployed on a chip and a carrier, respectively, are coupled through the electromagnetic field to provide a low-loss interconnect in a broadband manner. Simulation results indicate an insertion loss of 0.32 dB at 170 GHz while covering 3-dB bandwidth from 100 to 344 GHz. Measurement can be conducted to verify its performance only from 140 GHz to 220 GHz, due to equipment limit. The measured minimum insertion loss is 0.47 dB at 164 GHz.
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    A Low-Cost Broadband Bondwire Interconnect for THz Heterogeneous System Integration
    (2015)
    Li, Chun-Hsing
    ;
    Lai, Chih-Wei
    ;
    Yan, Tzu-Chao
    ;
    Kuo, Chien-Nan
    ;
    電機工程學系
    A low-cost broadband bondwire interconnect is proposed for THz heterogeneous system integration. A transversal path composed of two transmission lines and a bondwire is introduced to effectively reduce the bondwire effect of an original signal path consisted of a single bondwire only. Simulation results indicate that the return loss and insertion loss can be better than 15 dB and 2.3 dB from dc to 456 GHz, respectively. Measured interconnect loss is around 0 dB to 1.5 dB from 320 to 340 GHz.
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    A 340 GHz Triple-Push Oscillator With Differential Output in 40 nm CMOS
    (2014-12-01)
    Li, Chun-Hsing
    ;
    Ko, Chun-Lin
    ;
    Kuo, Chien-Nan
    ;
    Kuo, Ming-Ching
    ;
    Chang, Da-Chiang
    A low-power triple-push oscillator with differential output is proposed in this letter. By extracting signals from the same current loop, the oscillator can naturally provide differential output without any additional active circuit or passive balun required. Therefore, the output power can be increased and the chip area and power consumption can be reduced. Realized in 40 nm CMOS technology, the proposed oscillator can oscillate at 340.6 GHz while providing equivalent isotropically radiated power (EIRP) as -21.8 dBm. The power consumption is only 34.1 mW from a 0.9 V supply. The oscillator core only occupies area of 0.028 mm(2).