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Item type:Item, 3 similar to 11-GHz CMOS UWB LNA using dual feedback for broadband matching(2006-01-01) ;Fu, Chang-Tsung ;Kuo, Chien-Nan ;電子工程學系及電子研究所Department of Electronics Engineering and Institute of ElectronicsA 1.5V, 3 similar to 11GRz CMOS UWB LNA using dual feedback loops is reported. Using shunt capacitive feedback and series transformer feedback the broadband matching condition is achieved with high flat gain. Fabricated in 0.18um CMOS process, the measurement result demonstrates power gain of 11dB and maximum NF less than 5.6dB throughout the frequency range from 3.1 to 10.6 GHz with power consumption of 10.6mW.Item type:Item, 3 similar to 11-GHz CMOS UWB LNA using dual feedback for broadband matching(2006) ;Fu, Chang-Tsung ;Kuo, Chien-Nan ;電子工程學系及電子研究所Department of Electronics Engineering and Institute of ElectronicsA 1.5V, 3 similar to 11GHz CMOS UWB LNA using dual feedback loops is reported. Using shunt capacitive feedback and series transformer feedback the broadband matching condition is achieved with high flat gain. Fabricated in 0.18um CMOS process, the measurement result demonstrates power gain of 11dB and maximum NF less than 5.6 dB throughout the frequency range from 3.1 to 10.6 GHz with power consumption of 10.6 mW.Item type:Item, Low-Noise Amplifier Design With Dual Reactive Feedback for Broadband Simultaneous Noise and Impedance Matching(2010-04-01) ;Fu, Chang-Tsung ;Kuo, Chien-Nan ;Taylor, Stewart S. ;電子工程學系及電子研究所Department of Electronics Engineering and Institute of ElectronicsThe simultaneous noise and impedance matching (SNIM) condition for a common-source amplifier is analyzed. Transistor noise parameters are derived based on the more complete hybrid-pi model, and the dominant factors jeopardizing SNIM are identified. Strategies for narrowband and broadband SNIM (BSNIM) are derived accordingly. A dual reactive feedback circuit along with an LC-ladder matching network is proposed to achieve the BSNIM. It includes a capacitive and an inductive feedback, where the former utilizes the transistor parasitic gate-to-drain capacitance and the latter is formed by transformer coupling. This circuit topology has been validated in 0.18- and 0.13-mu m CMOS technologies for a 3-11-GHz ultra-wideband (UWB) and a 2.4-5.4-GHz multistandard application, respectively. The 3-11-GHz UWB low-noise amplifier is detailed as a design example.