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Abnormal PL spectrum in InGaN MQW surface emitting cavity
(2008-01-01)
Chu, J. T.
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Cheng, Y. -J.
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Kuo, H. C.
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Lu, T. C.
;
Wang, S. C.
We report the observation of an abnormal photoluminescent (PL) spectrum from a HeCd laser pumped InGaN multiple quantum well (MQW) vertical cavity. The device is fabricated using standard MOCVD deposition on a (0001)-oriented sapphire substrate. The layer structures are: 10nm nucleation layer, a 4um bulk GaN layer, InGaN MQWs, and a final 200nm GaN cap layer. The InGaN MQWs consist of 10 pairs of 5 nm GaN barrier and 3 run In0.1Ga0.9N well. The peak emission of the as-grown MQWs sample was similar to 420nm. A dielectric distributed Bragg reflectors (DBR) were then coated on the top layer, followed by a laser lift off from sapphire substrate, and subsequently another DBR coated on the bulk GaN bottom surface. The cavity has a quality factor of similar to 520 from 400-490nm. The device was pumped by a focused CW HeCd laser from the bulk GaN side. When the laser is focused onto the InGaN MQWs, a photoluminescent spectrum centered at the designed MOW wavelength was observed as expected. However, when the focused position was moved toward the bulk GaN region, an additional abnormal PL peak around 460nm was observed. This is far outside the designed MQW wavelength.
Analysis of Strain Relaxation and Emission Spectrum of A Free-Standing GaN-based Nanopillar
(2008-01-01)
Wu, Yuh-Renn
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Yu, Peichen
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Chiu, C. H.
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Chang, Cheng-Yu
;
Kuo, H. C.
We have made a, GaN-based single nanopillar with a, diameter of 300nm using the focused ion beam (FB) technique. The micro-photoluminescence (mu-PL) from the embedded GaN/InGaN multi-quantum wells reveals a blue shift of 68.3 meV in energy. In order to explain the spectrum shift, we have developed a valence force field model to study the strain relaxation mechanism in a, single GaN-based nanopillar structure. The strain distribution and strain induced polarization effect inside the multiple quantum wells is added to our self-consistent Poisson, drift-diffusion, and Schrodinger solver to study the spectrum shift of mu-PL.
Characterization of 380 nm UV-LEDs grown on free-standing GaN by atmospheric-pressure metal-organic chemical vapor deposition
(2014-01-01)
Shieh, C. Y.
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Li, Z. Y.
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Kuo, H. C.
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Chang, J. Y.
;
Chi, G. C.
We reported the defects and optical characterizations of the ultraviolet light-emitting diodes grown on free-standing GaN substrate (FS-GaN) and sapphire. Cross-sectional transmission electron microscopy (TEM) images showed that the total defect densities of grown UV LEDs on FS-GaN and sapphire including edge, screw and mixed type were 3.6x10(6) cm(-2) and 5.5x10(8) cm(-2). When substrate of UV LEDs was changed from sapphire to FS-GaN, it can be clearly found that the crystallography of GaN epilayers was drastically different from that GaN epilayers on sapphire. Besides, the microstructures or indium clustering can be not observed at UV LEDs on FS-GaN from TEM measurement. The internal quantum efficiency of UVLEDs on FS-GaN and sapphire were 34.8 % and 39.4 % respectively, which attributed to indium clustering in multi-layers quantum wells (MQWs) of UV LEDs on sapphire. The relationship between indium-clustering and efficiency droop were investigated by temperature-dependent electroluminescence (TDEL) measurements.
Influence of free-standing GaN substrate on ultraviolet light-emitting-diodes by atmospheric-pressure metal-organic chemical vapor deposition
(2013-01-01)
Shieh, C. Y.
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Li, Z. Y.
;
Chiu, C. H.
;
Tu, P. M.
;
Kuo, H. C.
We reported the influence of free-standing (FS) GaN substrate on ultraviolet light-emitting-diodes (UV LEDs) by atmospheric-pressure metal-organic chemical vapor deposition (APMOCVD). The Raman spectrum shows the in-plane compressive stress of the GaN epitaxial structures grown on FS GaN substrate. Besides, the Raman spectrum reveals the relation between the crystal quality and the carrier localization degree in multi-quantum wells (MQWs). High resolution X-ray diffraction (HRXRD) analysis results show that the In0 025Ga0 975N/Al0 08Ga0 92N MQWs grown on FS GaN substrate has higher indium mole fraction than sapphire at the same growth conditions. The higher indium incorporation is corresponding with the red-shift 6 nm (387 nm) of the room temperature photoluminescence (PL) peak. The full widths at half maximum (FWHM) of omega-scan rocking curve in (002) and (102) reflectance on FS GaN substrate (83 arcsec and 77 arcsec) are narrower than UV LEDs grown on sapphire (288 arcsec and 446 arcsec). This superior quality may attribute to homoepitaxial growth structure and better strain relaxation in the FS GaN substrate. An anomalous temperature behavior of PL in UV LEDs designated as an S-shaped peak position dependence and W-shaped linewidth dependence indicate that exciton/carrier motion occurs via photon-assisted tunneling through localized states, what results in incomplete thermalization of localized excitons at low temperature. The Gaussian broadening parameters of carrier localization is about 16.98 meV from the temperature dependent photoluminescence (TDPL) measurement. The saturation temperature from the TDPL linewidth of UV LEDs on FS GaN substrate at about 175 K represents a crossover from a nonthermalized to thermalized energy distribution of excitons.
Structural and optical characterizations of GaN-based green light-emitting diodes growth using TiN buffer layer
(2013-01-01)
Shieh, C. Y.
;
Li, Z. Y.
;
Kuo, H. C.
;
Chi, G. C.
;
光電工程學系
The present study investigated the structural and optical characterizations of the growth of GaN-based green light-emitting diodes using a TiN buffer layer. The purpose of growing GaN-based green LEDs on the TiN interlayer was to produce the naturally occurring hexagonal pattern structure on the surface of undoped-GaN. Then dislocations of the grown InGaN/GaN MQWs green LEDs structure on the uGaN template with the TiN interlayer produced base plane staking faults through epitaxial lateral overgrowth. Cross-section transmission electron microscope images showed that the dislocation density of green LEDs was decreased from 5 x 10(8) cm(-2) to 7 x 10(7) cm(-2), and that the dislocations in the green LEDs structure were reproduced. The full widths at half maximum of the omega-scan rocking curves in (002) and (102) reflectance on the GaN-based green LEDs were 334 and 488 arcsec, respectively. As the injection current was increased from 5 mA to 40 mA, the electroluminescence peak wavelength of the GaN-based green LEDs was shifted from 508 nm to 481 nm, a blue-shift of 27 nm. The forward voltage measured at an injection current of 20 mA was 4.9 V for the GaN-based green LEDs according to the current-voltage characteristics. Due to an increase in the In mole fraction of the GaN-based green LEDs on the uGaN template with the TiN interlayer, the strain and phase separation were increased, and the multiple quantum wells structural quality and device performances of the GaN-based green LEDs were decayed. A yellow band with a wavelength of 551nm was thereby produced according to room temperature photoluminescence measurement. Meanwhile, cross-section transmission electron microscope images indicated V-defects in multiple quantum wells structures of the green LEDs.
Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer
(2015-10-19)
Hsieh, D. H.
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Tzou, A. J.
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Kao, T. S.
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Lai, F. I.
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Lin, D. W.
In this report, the improved lasing performance of the III-nitride based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated by replacing the bulk AlGaN electron blocking layer (EBL) in the conventional VCSEL structure with an AlGaN/GaN multiple quantum barrier (MQB) EBL. The output power can be enhanced up to three times from 0.3 mW to 0.9 mW. In addition, the threshold current density of the fabricated device with the MQB-EBL was reduced from 12 kA/cm(2) (9.5 mA) to 10.6 kA/cm(2) (8.5 mA) compared with the use of the bulk AlGaN EBL. Theoretical calculation results suggest that the improved carrier injection efficiency can be mainly attributed to the partial release of the strain and the effect of quantum interference by using the MQB structure, hence increasing the effective barrier height of the conduction band. (C) 2015 Optical Society of America
Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells
(2013-01-14)
Shu, G. W.
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Lin, J. Y.
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Jian, H. T.
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Shen, J. L.
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Wang, S. C.
Spatially-resolved electroluminescence (EL) images in the triple junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared light with an energy below bandgap of the active layer in the top subcell, but above that in the middle subcell, the EL of the top subcell quenches. By analysis of EL intensity as a function of irradiation level, it is found that the coupled p-n junction structure and the photovoltaic effect are responsible for the observed EL quenching. With optical coupling and photoswitching effects in the multi-junction diode, a concept of infrared image sensors is proposed. (C)2012 Optical Society of America
Photo-induced Doping in GaN Epilayers with Graphene Quantum Dots
(2016-03-18)
Lin, T. N.
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Inciong, M. R.
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Santiago, S. R. M. S.
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Yeh, T. W.
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Yang, W. Y.
We demonstrate a new doping scheme where photo-induced carriers from graphene quantum dots (GQDs) can be injected into GaN and greatly enhance photoluminescence (PL) in GaN epilayers. An 8.3-fold enhancement of PL in GaN is observed after the doping. On the basis of time-resolved PL studies, the PL enhancement is attributed to the carrier transfer from GQDs to GaN. Such a carrier transfer process is caused by the work function difference between GQDs and GaN, which is verified by Kelvin probe measurements. We have also observed that photocurrent in GaN can be enhanced by 23-fold due to photo-induced doping with GQDs. The improved optical and transport properties from photoinduced doping are promising for applications in GaN-based optoelectronic devices.
Lasing in metal-coated GaN nano-stripe at room temperature
(2011-01-01)
Wang, Y. G.
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Chen, C. C.
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Chiu, C. H.
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Kuo, M. Y.
;
Shih, M. H.
We demonstrated lasing in a metal-coated GaN nano-stripe under room temperature pulsed operation, and the lasing mode at 370nm were observed. Aluminum and SiO2 layers were coated on the undoped GaN nano-stripe. (C) 2010 Optical Society of America
Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
(2011-01-01)
Chiu, C. H.
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Lin, D. W.
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Lin, C. C.
;
Li, Z. Y.
;
Kuo, H. C.
The semi-polar InGaN-based LEDs exhibits low efficiency droop because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. (C) 2010 Optical Society of America

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