學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Search Results

Now showing 1 - 7 of 7

MOCVD growth of AlN/GaN DBR structures under various ambient conditions
(2004-02-15)
Yao, HH
;
Lin, CF
;
Kuo, HC
;
Wang, SC
;
光電工程學系
The high-reflectivity AlN/GaN distributed Bragg reflector (DBR) structures were realized by metal organic chemical vapor deposition (MOCVD) growth under pure N-2 ambient for AlN epilayer growth. The highest peak reflectivity of about 94.5% with a stopband width of 18 nm at a center wavelength of 442 nm was obtained. For the DBR structure with AIN layer grown under mixture of N-2/H-2 and pure H-2 conditions, the center wavelength was blue-shifted to 418 and 371 nm and the peak reflectivity also showed a reduction to 92% and 79%, respectively. The stopband width also decreases with increasing H-2 contents. The surface roughness and the grain size of the grown DBR structures showed an increase with increasing the H-2 ambient gas ratio. For realization of a high reflectivity and broad bandwidth of AlN/ GaN DBR by using the MOCVD growth method, the pure N-2d ambient gas for growth of AIN layer should be preferable and optimal condition. (C) 2003 Elsevier B.V. All rights reserved.
Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs
(2004)
Chang, YS
;
Kuo, HC
;
Lai, FI
;
Chang, YA
;
Laih, LH
We present in this paper the MOCVD growth and characterization of high performance 850nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior characteristics, with threshold currents similar to0.4 mA, and slope efficiencies similar to 0.6 mW/mA. The threshold current change is less than 0.2 mA and the slope efficiency drops by less than similar to30% when the substrate temperature is raised from room temperature to 85degreesC. These VCSELs also demonstrate high speed modulation bandwidth up to 12.5Gbit/s from 25degreesC to 85degreesC.
Low-threshold-current-density, long-wavelength, highly strained InGaAs laser grown by metalorganic chemical vapor deposition
(2005-10-01)
Chen, IL
;
Hsu, WC
;
Kuo, HC
;
Yu, HC
;
Sung, CP
A long-emission-wavelength laser with multiple InGaAs/GaAs quantum wells without a strain-compensated barrier was grown by metalorganic chemical vapor deposition (MOCVD). InGaAs quantum well (QW) broad-area laser diodes with an emission wavelength of up to 1214 nm were realized. A measured room-temperature threshold current density of only 173 A/cm(2) for a 2-mm-cavity device and a transparency current density of 66 A/cm(2) were obtained. The internal quantum efficiency and laser cavity loss were 67% and 6 cm(-1), respectively.
Growth of highly strained RnGaAs quantum wells by metalorganic chemical vapor deposition with application to vertical-cavity surface-emitting laser
(2006-01-01)
Chen, IL
;
Hsu, WC
;
Lee, TD
;
Kuo, HC
;
Su, KH
A series of highly strained InGaAs quantum wells (QWs) with GaAs barriers emitting at wavelength longer than 1.2 mu m are grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). The optimized windows of the V/III ratio of the InGaAs layer and the growth rate of the barrier are first investigated on thease highly strained QWs. By an appropriate choice of the growth conditions, we extend the room-temperature photoluminescence (PL) wavelength of InGaAs QWs to 1245 nm, which corresponds to an indium content of 42%. A GaAs-based InGaAs vertical-cavity surface-emitting laser (VCSEL) at an emission wavelength of 1.28 mu m with a large detuning of 90 nm has been realized by the use of highly strained InGaAs QWs.
Theoretical and experimental analysis on InAlGaAs/AlGaAs active region of 850-nm vertical-cavity surface-emitting lasers
(2006-01-01)
Chang, YA
;
Chen, JR
;
Kuo, HC
;
Kuo, YK
;
Wang, SC
In this study, the gain-carrier characteristics of In0.02Ga0.98As and InAlGaAs quantum wells (QWs) of variant In and Al compositions with an emission wavelength of 838 nm are theoretically investigated. More compressive strain, caused by higher In and Al compositions in InAlGaAs QW, is found to provide higher material gain, lower transparency carrier concentration, and transparency radiative current density over the temperature range of 25-95 degrees C. To improve the output characteristics and high-temperature performance of 850-nm verticalcavity surface-emitting laser (VCSEL), In(0.15)AI(0.08)Ga(0.77)As/ Al0.3Ga0.7As is utilized as the active region, and a high-bandgap 10-nm-thick Al-0.75 Ga0.25As electronic blocking layer is employed for the first time. The threshold current and slope efficiency of the VCSEL with A(10.7)SGa(0.25)As at 25 degrees C are 1.33 mA and 0.53 W/A, respectively. When this VCSEL is operated at an elevated temperature of 95 C, the increase in threshold current is less than 21 % and the decrease in slope efficiency is approximately 24.5%. A modulation bandwidth of 9.2 GHz biased at 4 mA is demonstrated.
Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laser
(2006-02-01)
Chen, IL
;
Hsu, WC
;
Kuo, HC
;
Sung, CP
;
Chiou, CH
An emission wavelength record emission wavelength of 1245 nm in double InGaAs/GaAs quantum wells without a strain-compensated barrier is obtained by metalorganic chemical vapor deposition (MOCVD). The effect of annealing on highly strained InGaAs quantum wells is analyzed using phtoluminanescence spectra. By comparing devices p-type distributed Bragg reflector (p-DBR) growth temperatures, the preliminary results indicate that a device with a low p-DBR growth temperature of 670 degrees C exhibits a low threshold current and a high light output power. A threshold current of 6.7 mA in an InGaAs vertical-cavity surface emitting laser (VCSEL) in CW operation is realized with an emission spectrum up to 1.26 mu m.
Study of InGaN multiple quantum dots by metal organic chemical vapor deposition
(2006-04-01)
Wang, TC
;
Kuo, HC
;
Lu, TC
;
Tsai, CE
;
Tsai, MY
We reports a study of InGaN Multiple quantum dot layers. Using the in-situ SiNx treatment process, InGaN multiple quantum dot layers were successfully developed. The InGaN multiple quantum dot layers were constructed with SiNx dot mask layers, InGaN dot layers, and GaN cap layers on a 2-mu m-thick GaN underlying layer on a sapphire substrate. Optical properties including room temperature photoluminescence (PL), temperature dependent PL, and low power power-dependent PL were examined and discussed. The structure was also analyzed by transmission electron microscopy (TEM) and energy dispersive X-ray (EDX) line scan.

學術出版;;Publications

Browse

Filters

Settings

Sort By

Results per page

🏛️國立陽明交通大學機構典藏

Search Results