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Performance of 850 nm AlGaAs/GaAs implanted VCSELs utilizing silicon implantation induced disordering
(2003-10-01)
Lai, FI
;
Hsueh, TH
;
Chang, YH
;
Shu, WC
;
Lai, LH
In this paper, we report a novel implanted vertical surface emitting lasers (VCSELs) utilizing silicon implantation induced disordering. The VCSELs exhibit kink-free current-light Output performance with threshold currents similar to2.4 mA, and the slope efficiencies similar to0.45 W/A. The threshold current change with temperature is minimal and the slope efficiency drops less than similar to30% when the substrate temperature is raised to 90 degreesC. The eye diagram of VCSEL operating at 2.125 Gb/s with 7 mA bias and 10 dB extinction ratio shows very clean eye with jitter less than 30 ps. We have accumulated life test data up to 5000 It at 100 degreesC/20 mA with exceptional reliability and the WHTOL (high temperature and high humidity 85 degreesC/85 operating lifetime) biased at 8 mA has passed over 2000 h. (C) 2003 Elsevier Ltd. All rights reserved.
High speed performance of 850 nm silicon-implanted AlGaAs/GaAs vertical cavity emitting lasers
(2004-03-01)
Kuo, HC
;
Chang, YS
;
Lai, FY
;
Hseuh, TH
;
Chu, LT
In this paper, we report a high speed performance of silicon-implanted vertical surface emitting lasers (VCSELs) with the aperture size 6x6 mum(2). These VCSELs exhibit kink-free current-light output with threshold currents similar to1.14 mA, and the slope efficiencies similar to0.5 W/A. The eye diagram of VCSEL operating at 10 Gb/s with 6 mA bias and 6 dB extinction ratio shows very clean eye. The rise time is 29 ps and fall time is 41 ps with jitter (p-p) = 21 ps. We have accumulated life test data up to 1000 h at 70 degreesC/10 mA. (C) 2003 Elsevier Ltd. All rights reserved.
Improvement of high-speed oxide-confined vertical-cavity surface-emitting lasers
(2004-04-01)
Yu, HC
;
Chang, SJ
;
Su, YK
;
Sung, CP
;
Yang, HP
High-speed vertical-cavity surface-emitting lasers that could be modulated up to 10 Giga-bit-per-second (Gbps) were accomplished by using additional proton implantation to reduce the parasitic capacitance. The eye diagram of the implanted device shows a noticeable improvement when compared with those devices without implantation. In contrast to previous reports, moreover, the output power-current-voltage (L-I-V) characteristics of the fabricated devices ill this study show excellent consistency between before and after implantation. The high-temperature lifetime of devices fabricated with a similar process has already exceeded 8100 h up to the present day.
Improvement of kink characteristics performance of GaAsVCSEL with a indium-tin-oxide top transparent overcoating
(2004-11-15)
Lai, F
;
Chang, YH
;
Hsueh, TH
;
Huang, HW
;
Laih, LH
We demonstrated the enhancement in the performance of proton-implanted GaAs VCSEL by incorporation of a new p-contact scheme using a Ti and ITO transparent overcoating on the regular p-contact. The kink characteristics in light output power versus current (L-I) curve of the VCSEL with the Ti/ITO overcoating were improved with a reduction in the derivative kink factor of as large as 70%. The high-speed response of the overcoated device also shows a more open clear eye and lower jitter of 35 ps operating at 2.125 Gb/s under 10 mA bias and 9 dB extinction ratio compared to the no overcoated device. Better current spreading and uniformity induced by the overcoating could be responsible for these performance improvements. (C) 2004 Elsevier B.V. All rights reserved.
High temperature stability 850-nm In0.15Al0.08Ga0.77As/Al0.3Ga0.7As vertical-cavity surface-emitting laser with single Al0.75Ga0.25As current blocking layer
(2005)
Chang, YA
;
Lai, FI
;
Yu, HC
;
Kuo, HC
;
Laih, LW
In this paper, we employed a high bandgap Al0.75Ga0.25As layer acting as an electronic blocking layer in the upper In0.15Al0.08Ga0.77As/Al0.3Ga0.7As active region before the growth of p-type layers of 850-nm vertical-cavity surface-emitting lasers (VCSELs). A threshold current of 1.33mA and slope efficiency of 0.53W/A at 25 degrees C were obtained, and the temperature dependent light output and voltage versus current (L-I-V) characteristics showed that the VCSELs with a high bandgap Al0.75Ga0.25As layer were more stable when the substrate temperature was in a range of 25-95 degrees C. The threshold current increased with temperature up to 95 degrees C was less than 21% and the slope efficiency dropped only 24.5%.
Improvement of kink characteristic of proton implanted VCSEL with ITO overcoating
(2004)
Lai, FI
;
Chang, YH
;
Laih, LH
;
Kuo, HC
;
Wang, SC
Proton implanted VCSEL has been demonstrated with good reliability and decent modulation speed up to 1.25 Gb/s. However, kinks in current vs light output (L-I) has been always an issue in the gain-guided proton implant VCSEL. The kink related jitter and noise performance made it difficult to meet 2.5 Gb/s (OC-48) requirement. The kinks in L-I curve can be attributed to non-uniform carrier distribution induced non-uniform gain distribution within emission area. In this paper, the effects of a Ti/TO transparent over-coating on the proton-implanted AlGaAs/GaAs VCSELs (15um diameter aperture) are investigated. The kinks distribution in L-I characteristics from a 2 inch wafer is greatly improved compared to conventional process. These VCSELs exhibit nearly kink-free L-I output performance with threshold currents similar to3 mA, and the slope efficiencies similar to 0.25 W/A. The near-field emission patterns suggest the Ti/ITO over-coating facilitates the current spreading and uniform carrier distribution of the top VCSEL contact thus enhancing the laser performance. Finally, we performed high speed modulation measurement. The eye diagram of proton-implanted VCSELs with Ti/ITO transparent over-coating operating at 2.125 Gb/s with 10mA bias and 9dB extinction ratio shows very clean eye with jitter less than 35 ps.
Single mode output (SMSR > 40 dB) utilizing photonic crystal on proton-implanted vertical-cavity surface-emitting lasers
(2005)
Lai, FI
;
Chang, YH
;
Yang, HP
;
Yu, HC
;
Kuo, HC
Proton-implanted photonic crystal VCSELs were demonstrated with power > 1 mW and SMSR > 40 dB. The relative intensity noise spectra show the resonant frequency reaches to 7.8 GHz: with a D factor of 4.72 GHz/(mA)(1/2).
Temperature-dependent photoluminescence of highly strained InGaAsN/GaAs quantum wells (lambda=1.28-1.45 mu m) with GaAsP strain-compensated layers
(2005-08-01)
Lai, FI
;
Kuo, HC
;
Chang, YH
;
Tsai, MY
;
Chu, CP
The effects of nitrogen incorporation into the In(0.4)Ga(0.6)As(1-x)N(x)/GaAs single quantum wells (SQWs), where x = 0.5 and 2%, grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD) were investigated using photoluminescence (PL) and high-resolution transmission electron microscopy (HRTEM). The evolution of the excitation-dependent PL and PL-peak position with temperature between 10 and 300 K shows that quantum-dot-like states occurred at that high nitrogen incorporation (x = 2%) and were confirmed by an HRTEM image which showed small dark regions about 2 - 3 nm in size was found in the interface of In(0.4)Ga(0.6)As(0.98)N(0.02) and GaAs. Our investigations indicate that high nitrogen incorporation into the In(0.4)Ga(0.6)As(1-x)N(x)/GaAs system influenced carrier localization and might cause the formation of the dot-like states.
Growth of highly strained RnGaAs quantum wells by metalorganic chemical vapor deposition with application to vertical-cavity surface-emitting laser
(2006-01-01)
Chen, IL
;
Hsu, WC
;
Lee, TD
;
Kuo, HC
;
Su, KH
A series of highly strained InGaAs quantum wells (QWs) with GaAs barriers emitting at wavelength longer than 1.2 mu m are grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). The optimized windows of the V/III ratio of the InGaAs layer and the growth rate of the barrier are first investigated on thease highly strained QWs. By an appropriate choice of the growth conditions, we extend the room-temperature photoluminescence (PL) wavelength of InGaAs QWs to 1245 nm, which corresponds to an indium content of 42%. A GaAs-based InGaAs vertical-cavity surface-emitting laser (VCSEL) at an emission wavelength of 1.28 mu m with a large detuning of 90 nm has been realized by the use of highly strained InGaAs QWs.
Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laser
(2006-02-01)
Chen, IL
;
Hsu, WC
;
Kuo, HC
;
Sung, CP
;
Chiou, CH
An emission wavelength record emission wavelength of 1245 nm in double InGaAs/GaAs quantum wells without a strain-compensated barrier is obtained by metalorganic chemical vapor deposition (MOCVD). The effect of annealing on highly strained InGaAs quantum wells is analyzed using phtoluminanescence spectra. By comparing devices p-type distributed Bragg reflector (p-DBR) growth temperatures, the preliminary results indicate that a device with a low p-DBR growth temperature of 670 degrees C exhibits a low threshold current and a high light output power. A threshold current of 6.7 mA in an InGaAs vertical-cavity surface emitting laser (VCSEL) in CW operation is realized with an emission spectrum up to 1.26 mu m.

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