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Design and Optimization of VCSELs for up to 40-Gb/s Error-Free Transmission Through Impurity-Induced Disordering
(2020-03-01)
Peng, Chun-Yen
;
Cheng, Hao-Tien
;
Kuo, Hao-Chung
;
Wu, Chao-Hsin
;
光電工程學系
This article describes an optimized design and process for the improvement of the electrical properties of vertical-cavity surface-emitting lasers (VCSELs) via the impurity-induced disordering (IID) technology. Through the IID process, the electrical current path can be tailored to detour around the defect centers introduced by the oxidation process, resulting in a noticeable improvement in the dc and the RF characteristics of the IID VCSEL. The threshold current was reduced from 0.341 to 0.225 mA due to better current injection efficiency in the IID VCSEL. The characteristic temperature of the IID VCSEL increased from 106 to 150 K, and the slope of the I-V characteristics under low-level-injection regime could be improved to a factor of exp. The RF characteristics also echoed the dc characteristics, which the optical bandwidth of the IID VCSEL enhanced from 18.95 to 23.49 GHz, and showed a prominent difference on the factor (similar to 0.26 to similar to 0.22 ns) and the D factor (similar to 7 to similar to 11 GHz/(mA)(1/2)). The IID VCSEL is then employed for a data transmission link, an eye diagram was characterized at up to 44 Gb/s and passed 40-Gb/s error-free testing under on-off-keying (OOK) modulation.
Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction
(2019-04-01)
Shen, Chih-Chiang
;
Lu, Yun-Ting
;
Yeh, Yen-Wei
;
Chen, Cheng-Yuan
;
Chen, Yu-Tzu
In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (J(th)) from 12 to 8.5 kA/cm(2), and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 degrees C) and high operation current (1.5 x J(th)) test for over 500 h.
Long-Term Thermal Stability of Single-Mode VCSEL Under 96-Gbit/s OFDM Transmission
(2019-11-01)
Kao, Hsuan-Yun
;
Tsai, Cheng-Ting
;
Chi, Yu-Chieh
;
Peng, Chun-Yen
;
Leong, Shan-Fong
Thermal-dependent transmission performance and long-term stability of a single-transverse-mode (SM) vertical-cavity surface-emitting laser (VCSEL) with directly pre-leveled 16quadrature amplitude modulation orthogonal frequency-division multiplexing (16-QAM OFDM) data over 100 m 0M4 multi-mode-fiber (MMF) are demonstrated. Although narrowing the oxide-confined aperture to 3 mu m enables the SM VCSEL with low threshold current of 0.21 mA and high modulation bandwidth of 21.4 GHz, this technology also enlarges the insulating oxide area to accumulate the heat for raising core temperature. This induces a harsh environment as the core temperature persistently increases without dissipation even under the water-cooling control at 20 degrees C. As a result, the SM VCSEL can only guarantee a stable operation for 1.5 h under the encoding of QAM-OFDM data for transmission. After optimization, the SM VCSEL successfully supports a back-to-back transmission capacity as high as 96 Gbit/s. With the assistance of OFDM pre-leveling technique, the 96-Gbit/s QAM-OFDM data transmission is qualified over 100 m OM4 MMF with a receiving power penalty as low as 13 dB.
Low threshold current, low resistance 1.3 mu m InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE
(2007-01-01)
Yu, Hsin-Chieh
;
Wang, Jyh-Shyang
;
Su, Yan-Kuin
;
Chang, Shoou-Jinn
;
Kuo, Hao-Chung
The processing technology of 1.3 mu m InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE will be demonstrated. The threshold currents of the fabricated devices with 10 mu m oxide-confined aperture are 0.7mA, which correspond to 890A/cm(2) threshold current density. And the threshold voltage of the device is 1.03V and maximum output power is 33 M. The series resistance is 85 Omega which is 10 times lower then our preliminary work and 3 times lower then intracavity contacted InAs-InGaAs quantum-dot VCSEL. This relatively lower resistance can even comparable with the best result reported in InGaAs oxide-confined VCSELs with intracavity contact.
A simple model for cavity enhanced slow lights in vertical cavity surface emission lasers
(2008-04-01)
Chou, Chia-Sheng
;
Lee, Ray-Kuang
;
Peng, Peng-Chun
;
Kuo, Hao-Chung
;
Lin, Gray
We develop a simple model for the slow lights in vertical cavity surface emission lasers (VCSELs), with the combination of cavity and population pulsation effects. The dependences of probe signal power, injection bias current and wavelength detuning for the group delays are demonstrated numerically and experimentally. Up to 65 ps group delays and up to 10 GHz modulation frequency can be achieved at room temperature at a wavelength of 1.3 mu m. The most significant feature of our VCSEL device is that the thickness of the active region is only several micrometers long. Based on the experimental parameters of quantum dot VCSEL structures, we show that the resonance effect of the laser cavity plays a significant role in enhancing the group delays.
High-power single-mode vertical-cavity surface-emitting lasers with multi-leaf holey structure
(2006-09-01)
Yang, Hung-Pin D.
;
Hsu, I-Chen
;
Lai, Fang-I
;
Kuo, Hao-Chung
;
Chi, Jim Y.
A single-mode oxide-confined vertical-cavity surface-emitting laser (VCSEL) with multi-leaf holey structure for fiber-optic applications is demonstrated. Single fundamental mode continuous-wave output power of over 3 mW has been achieved in the 850 nm range, with a threshold current of approximately 0.5 mA. Side-mode suppression ratio (SMSR) larger than 22 dB has been measured.
Characteristics of single-mode InGaAs submonolayer quantum-dot photonic-crystal vertical-cavity surface-emitting lasers
(2006-12-01)
Yang, Hung-Pin D.
;
Hsu, I-Chen
;
Lai, Fang-I
;
Lin, Gray
;
Hsiao, Ru-Shang
An InGaAs submonolayer (SML) quantum-dot photonic-crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fiber-optic applications is demonstrated for the first time. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (< 1 ML) and GaAs. A single-fundamental-mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. A side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over the entire current operation range. The beam profile and near-field image study of the PhC-VCSEL indicates that the laser beam,is well confined by the photonic crystal structure of the device.
Characteristics of cross-shaped polarization-switching vertical-cavity surface-emitting lasers for dual-channel communications
(2007-04-01)
Yang, Hung-Pin D.
;
Hsu, I-Chen
;
Lai, Fang-I
;
Lin, Gray
;
Kuo, Hao-Chung
The polarization switching of a cross-shaped vertical-cavity surface-emitting laser (VCSEL) for dual-channel communications is demonstrated. The polarization of the lasing output is controlled by the asymmetry in geometry of the device and direction of current injection. High output power ratio of over 5, between two orthogonal (perpendicular) polarization directions has been achieved. The lasing output of the device can be switched between two nearly orthogonal directions.
Highly strained InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers
(2007-06-01)
Yang, Hung-Pin D.
;
Chen, I-Liang
;
Lee, Chen-Hong
;
Chiou, Chih-Hong
;
Lee, Tsin-Dong
We report our results on the highly strained InGaAs/GaAs quantum well (QW) vertical-cavity surface-emitting lasers (VCSELs) in the 1140 to 1250 nm range. The epitaxial structures were grown on (100)GaAs substrates by metal-organic chemical vapor deposition (MOCVD). A maximum output power of more than 6.3 mW has been demonstrated. The spectral characteristics were also measured and analyzed.
Characteristics of broad-area InGaAs submonolayer quantum-dot vertical-cavity surface-emitting lasers
(2007-10-01)
Yang, Hung-Pin D.
;
Hsu, I-Chen
;
Lai, Fang-I
;
Lin, Gray
;
Hsiao, Ru-Shang
A broad-area InGaAs submonolayer (SML) quantum-dot vertical-cavity surface-emitting laser (QD VCSEL) for fiber-optic applications is demonstrated. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (< 1 ML) and GaAs. A maximum CW output power of 12.2 mW at 30 mA has been achieved in the 990 nm range, with a threshold current of 1 mA.

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