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Author: search.filters.author.Kuo, Hao-ChungSubject: search.filters.subject.light-emitting diode (LED)

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Now showing 1 - 6 of 6
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    Purely Sidewall InGaN/GaN Core-Shell Nanorod Green Light-Emitting Diodes
    (2015)
    Lin, Da-Wei
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    Wu, Yung-Chi
    ;
    Kuo, Hao-Chung
    ;
    Chi, Gou-Chung
    ;
    Hsu, Lung-Hsing
    A novel purely sidewall InGaN/GaN core-shell nanorod green light-emitting diode (LED) has been demonstrated by 3D dielectric passivation and selective epitaxial growth technologies. The LED device exhibits unprecedented stable emission wavelength and low efficiency droop.
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    Design and fabrication of temperature-insensitive InGaP-InGaAlP resonant-cavity light-emitting diodes
    (2006-07-01)
    Chang, Yi-An
    ;
    Yu, Chun-Lung
    ;
    Wu, I-Tsung
    ;
    Kuo, Hao-Chung
    ;
    Lu, Tien-Chang
    Visible InGaP-InGaAlP resonant-cavity light-emitting diodes with low-temperature sensitivity output characteristics were demonstrated. By means of widening the resonant cavity to a thickness of three wavelength (3 A), the degree of power variation between 25 degrees C and 95 degrees C for the devices biased at 20 mA was apparently reduced from -2.1 dB for the standard structure design (1 - lambda avity) to -0.6 dB. An output power of 2.4 mW was achieved at 70 mA. The external quantum efficiency achieved a maximum of 3% at 13 mA and dropped slowly with increased current for the device. The external quantum efficiency at 20 mA dropped only 14% with elevated temperature from 25 degrees C to 95 degrees C. The current dependent far-field patterns also showed that the emission always took place perfectly in the normal direction, which was suitable for plastic fiber data transmission.
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    Characteristics of P-substrate small-aperture holey light-emitting diodes for fiber-optic applications
    (2007-05-01)
    Yang, Hung-Pin D.
    ;
    Liu, Jui-Nung
    ;
    Lai, Fang-I
    ;
    Kuo, Hao-Chung
    ;
    Chi, Jim Y.
    A small-aperture oxide-confined holey light-emitting diode (LED) on p-type GaAs substrate in the 830 nm range is reported. The device is consisted of bottom distributed Bragg reflector (DBR), quantum wells (QWs), and top DBR, with a small-aperture holey structure at the center for light extraction. The internally reflected spontaneous emission can be extracted and collimated out of the etched hole. High-resolution imaging studies indicate that the device emits with a narrower beam mainly through the central etched hole region made it suitable for fiber-optic applications.
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    GaN-based high-Q vertical-cavity light-emitting diodes
    (2007-10-01)
    Lu, Tien-Chang
    ;
    Kao, Tsung-Ting
    ;
    Kao, Chih-Chiang
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    Chu, Jung-Tang
    ;
    Yeh, Kang-Fan
    We report a fabrication and demonstration of a GaN-based high-Q vertical-cavity light-emitting diode (VCLED). The GaN VCLED is composed of a 25-pair high-reflectivity (98%) GaN/AlN distributed Bragg reflector (DBR), an eight-pair SiO2/Ta2O5 dielectric DBR (99%), and a three-A optical thickness InGaN/GaN active region. It shows a very narrow linewidth of 0.52 nm, corresponding to a cavity Q-value of 895 at a driving current of 10 mA and a dominant emission peak wavelength at 465.3 nm. In addition, this VCLED emission linewidth continues to decrease with an increasing injection current, suggesting a possible realization of GaN-based vertical-cavity surface emitting lasers.
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    Characteristics of multileaf holey light-emitting diodes for fiber-optic communications
    (2008-02-01)
    Yang, Hung-Pin D.
    ;
    Yeh, Zao-En
    ;
    Lai, Fang-I
    ;
    Kuo, Hao-Chung
    ;
    Chi, Jim Y.
    An oxide-confined multileaf holey light-emitting diode (LED) in the 780 nm range is reported. The device is consisted of bottom distributed Bragg reflector (DBR), quantum wells QWs), and top DBR, with a multileaf holey structure within the p-ohmic contact ring for light extraction. The spontaneous emission from under the etched holes and internally reflected lights can be extracted and collimated out of the smaller etched leaf holes. High-resolution imaging studies indicate that the device emits with smaller beams mainly through the multileaf etched holes made it suitable for fiber-optic communications.
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    Extraction Efficiency Enhancement of GaN-Based Light-Emitting Diodes by Microhole Array and Roughened Surface Oxide
    (2009-05-01)
    Lai, Fang-I.
    ;
    Ling, S. C.
    ;
    Hsieh, C. E.
    ;
    Hsueh, T. H.
    ;
    Kuo, Hao-Chung
    The light-output power of GaN-based light-emitting diodes (LEDs) was enhanced by microhole array pattern and roughened GaO(x) film grown on the exposed surface. The GaO(x) film was grown by photoelectrochemical (PEC) oxidation via H(2)O and formed a naturally rough oxide surface and GaO(x)/GaN interface. Compared with that of conventional broad-area LEDs, the output power of the microhole array LED and the surface-oxidized microhole array LED increased by 1.38 and 1.82 times at 20-mA forward current, respectively. The results show that the microhole array pattern with the roughened surface oxide method could significantly enhance light extraction efficiency and be a candidate for manufacturing high-efficient low-cost GaN-based LEDs.