<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

Filters

2004 - 20052

Settings

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Kuo, MCHas files: No

Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Item type:Item,
    A CMOS dual-mode RF front-end receiver for GSM and WCDMA
    (2004)
    Ko, CL
    ;
    Kuo, MC
    ;
    Hsu, CM
    ;
    Kuo, CN
    ;
    交大名義發表
    A dual-mode, triple-band RF front-end receiver for GSM900, DCS1800 and WCDMA is presented. Because the system concepts of GSM and WCDMA are totally different from the standards, the chip uses low-IF and zero-IF receiver architecture for GSM and WCDMA, respectively. This chip consists of three parallel LNAs and down-conversion mixers with on-chip LO I/Q generations. The receiver front-end has been implemented in a standard 0.25um CMOs process and consumes about 30-mA from a 2.7-V power supply for all modes. The measured double-side band noise figure and voltage gain are 3dB, 36dB for the GSM900, 5.9dB, 31dB for the DCS1800, and ?-dB, 17.2dB for the WCDMA, respectively.
  • Thumbnail Image
    Item type:Item,
    A CMOS dual-mode RF front-end receiver for GSM and WCDMA applications
    (2005-06-01)
    Ko, CL
    ;
    Kuo, MC
    ;
    Kuo, CN
    ;
    交大名義發表
    ;
    National Chiao Tung University
    A dual-mode, triple-band RF front-end receiver for GSM900, DCS800 and WCDMA is presented in this paper. This chip uses low-IF and zero-IF receiver architectures for GSM and WCDMA respectively to fulfill the entirely different system requirements of the two standards. It consists of three parallel LNAs and down-conversion mixers with on-chip LO I/Q generations. The receiver front-end is implemented in a standard 0.25 mu m CMOS process and consumes about 30-mA from a 2.7-V power supply for all modes. The measured double-side band noise figure and voltage gain are 3 dB, 36 dB for the GSM900, 5.9 dB, 31 d13 for the DCS 1800, and 4.3 dB, 29.6 dB for the WCDMA, respectively.