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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作,涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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  • Item type:Item,
    A 1.3 GHz-5.3 GHz Wideband, High Linearity Balun Low Noise Amplifier
    (2011)
    Yang, Kai-Hsiang
    ;
    Kuo, Ming-Ching
    ;
    Yan, Tzu-Chao
    ;
    Kuo, Chien-Nan
    ;
    電子工程學系及電子研究所
    In this work, a balun low-noise amplifier (LNA) is designed and implemented in 0.18-mu m CMOS process. The bulk cross-coupling (BCC) and capacitance cross-coupling (CCC) techniques are introduced in this LNA, which not only increase gain and linearity but also decrease noise figure. The 3 dB bandwidth extends from 1.27 GHz to 5.31 GHz. The maximum differential gain is 10.13 dB. Measured at 3 GHz, P-1dB and IIP3 are -10 dBm and 0 dBm, respectively. The LNA core circuit dissipates 7.32 mW from 1.8 V power supply.
  • Item type:Item,
    A 1.2 V 114 mW Dual-Band Direct-Conversion DVB-H Tuner in 0.13 mu m CMOS
    (2009-03-01)
    Kuo, Ming-Ching
    ;
    Kao, Shiau-Wen
    ;
    Chen, Chih-Hung
    ;
    Hung, Tsun-Shuen
    ;
    Shih, Yi-Shing
    A fully integrated direct-conversion tuner is implemented in 0.13 mu m CMOS technology. A broadband noise-canceling balun LNA with the proposed dual cross-coupling technique helps achieve an overall receiver noise figure from 3.7 to 4.3 dB while consuming only 3.6 mW. The proposed current-mode switching scheme improves the achievable SNIR with a gain step of 15 dB, providing IIP3 improvement of 18 dB and NF degradation of only 6 dB. Moreover, design trade-offs are carefully considered in designing the baseband circuit, which provides wide gain tuning and bandwidth accuracy with a DC offset residual less than 6 mV. The measured maximum SNR values are better than 30 dB over wide input power levels, ensuring robust reception in a mobile environment. All circuit blocks are operated at 1.2 V. As a result, the tuner consumes power as low as 114 mW in the continuous mode. This compact tuner supports both UHF and L-bands, and occupies only 7.2 mm(2) die area.