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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Kuo, Shou-YiSubject: search.filters.subject.CIGS

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Now showing 1 - 3 of 3
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    A Comprehensive Study of One-Step Selenization Process for Cu(In1-xGax) Se-2 Thin Film Solar Cells
    (2017-03-21)
    Chen, Shih-Chen
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    Wang, Sheng-Wen
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    Kuo, Shou-Yi
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    Juang, Jenh-Yih
    ;
    Lee, Po-Tsung
    In this work, aiming at developing a rapid and environmental-friendly process for fabricating CuIn1-xGaxSe2 (CIGS) solar cells, we demonstrated the one-step selenization process by using selenium vapor as the atmospheric gas instead of the commonly used H2Se gas. The photoluminescence (PL) characteristics indicate that there exists an optimal location with superior crystalline quality in the CIGS thin films obtained by one-step selenization. The energy dispersive spectroscopy (EDS) reveals that the Ga lateral distribution in the one-step selenized CIGS thin film is intimately correlated to the blue-shifted PL spectra. The surface morphologies examined by scanning electron microscope (SEM) further suggested that voids and binary phase commonly existing in CIGS films could be successfully eliminated by the present one-step selenization process. The agglomeration phenomenon attributable to the formation of MoSe2 layer was also observed. Due to the significant microstructural improvement, the current-voltage (J-V) characteristics and external quantum efficiency (EQE) of the devices made of the present CIGS films have exhibited the remarkable carrier transportation characteristics and photon utilization at the optimal location, resulting in a high conversion efficiency of 11.28%. Correlations between the defect states and device performance of the one-step selenized CIGS thin film were convincingly delineated by femtosecond pump-probe spectroscopy.
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    A look into the origin of shunt leakage current of Cu(In,Ga)Se-2 solar cells via experimental and simulation methods
    (2013-10-01)
    Liao, Yu-Kuang
    ;
    Kuo, Shou-Yi
    ;
    Hsieh, Ming-Yang
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    Lai, Fang-I
    ;
    Kao, Ming-Hsuan
    This study investigates how to apply space-charge-limited (SCL) current to describe shunt leakage current in a CIGS solar cell. Possible factors inducing SCL current have been observed through conductive atomic force microscopy (C-AFM), which supports the SCL current theory, describing the shunt current of a CIGS solar cell. In simulations derived from experimental data, deviation of dark IV curves is due to flaws in the real device. These flaws are absent in simulation, but investigation verifies the characteristics of SCL current component's experimental IV curves within shunt leakage current. A device with a metal/CIGS/metal structure could simulate SCL current and confirm its characteristics. Such a simulated structure, representing flaws inserted into a CIGS solar cell, generates the same dark-current behavior revealed in experimental dark IV curves. This study investigates the response of dark current to varying sizes of the flaw within the CIGS solar cell. (C) 2013 Elsevier B.V. All rights reserved.
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    Characterization of large area Cu(In,Ga)Se-2 nanotip arrays via photoluminescence
    (2012)
    Liao, Yu-Kuang
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    Lin, Woei-Tyng
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    Hsieh, Dan-Hua
    ;
    Kuo, Shou-Yi
    ;
    Lai, Fang-I
    In this study, photoluminescence (PL) measurements were used to characterized Cu(In,Ga)Se-2 nanotip arrays (CIGS NTRs). Large area CIGS NTRs were yielded by using one step Ar+ milling process without template. Formation mechanism of NTRs is due to a highly anisotropic milling effect of the quaternary components compound. In both CIGS thin films with and without NTRs, saturation effects of Donor-Acceptor Pair (DAP) had been observed while excitation power dependence PL measurements. Comparing with thin film CIGS without NTRs, it has revealed that the concentration DAP had been changed after formation of CIGS NTRs and had enhanced its carrier density of the p-type semiconductor.