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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Kwong, DLSubject: search.filters.subject.RF

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Now showing 1 - 3 of 3
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    High-density MIM canpacitors using AlTaOx dielectrics
    (2003-05-01)
    Yang, MY
    ;
    Huang, CH
    ;
    Chin, A
    ;
    Zhu, CX
    ;
    Li, MF
    The authors have obtained good MIM capacitor integrity of high-capacitance density of 10 fF/mum(2) using high-k AlTaOx fabricated at 400degreesC. In addition, small voltage dependence of capacitance of < 600, ppm (quadratic voltage coefficient of only 130 ppm/V-2). is obtained at 1 GHz using their mathematical derivation from measured high-frequency S parameters. These good results ensure the high-k AlTaOx. MIM capacitor technology is useful for high-precision circuits operated at the RF frequency regime.
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    Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectrics
    (2003-10-01)
    Yang, MY
    ;
    Huang, CH
    ;
    Chin, A
    ;
    Zhu, CX
    ;
    Cho, BJ
    Using high-kappa, Al2O3 doped Ta2O5 dielectric, we have obtained record high MINI capacitance density of 17 fF/mum(2) at 100 KHz, small 5% capacitance reduction to RF frequency range, and low leakage current density of 8.9 x 10(-7) A/cm(2). In combination of both high capacitor density and low leakage current density, a very low leakage current of 5.2 x 10(-12) A is calculated for a typical large 10 pF capacitor used in RF IC that is even smaller than that of a deep sub-mum MOSFET. This very high capacitance density with good MINI capacitor characteristics can significantly reduce the chip size of RF ICs.
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    Integrated antennas on Si with over 100 GHz performance, fabricated using an optimized proton implantation process
    (2003-11-01)
    Chan, KT
    ;
    Chin, A
    ;
    Lin, YD
    ;
    Chang, CY
    ;
    Zhu, CX
    We have improved the performance of integrated antennas on Si for possible application in wireless communications and wireless interconnects. For practical VLSI integration, we have reduced the antenna size and optimized the proton implantation to a low energy of similar to 4 MeV with a depth of similar to 175 mum. To avoid any possible contamination, the ion implantation is applied after device fabrication. Excellent performance such as very low RF power loss up to 50 GHz, record high 103 GHz antenna resonance, and sharp 5 GHz bandwidth have been achieved.